Abstract: A power tool includes a motor, a housing, a battery mounting part, and a battery protection part. The battery mounting part is provided to the housing on an opposite side from a working axis across the motor in an extending direction of a rotation axis of the motor. The battery mounting part is configured such that one end portion of at least one battery is mounted to the battery mounting part and an opposite end portion of the at least one battery in the extending direction of the rotation axis is exposed from the housing. The battery protection part is provided to an outer surface portion of the housing and configured to protect at least one corner region of the opposite end portion of the at least one battery against external force when the one end portion is mounted to the battery mounting part.

Abstract: The representative impact tool has a motor, a driving mechanism, a body housing and a handle, and part of the motor and part of the handle are disposed on an axis of a tool accessory. The impact tool has an outer housing that is disposed to cover the outside of the body housing and connected to the body housing via an elastic element so as to be allowed to move with respect to the body housing in an axial direction of the tool accessory, and the handle is integrally connected to the outer housing. The body housing has an exposed region in which at least part of a region of the body housing corresponding to at least one of the motor and the driving mechanism, is not covered by the outer housing.

Abstract: A power tool, such as a rotary hammer or hammer drill, includes a first housing that contains a motor and a drive mechanism for linearly reciprocally driving a tool accessory, and a second housing that includes a handle, a first portion and a second portion. At least one elastic element connects the first and second housings such that the handle is biased away from the first housing. A first set of sliding contact surfaces is defined on or connected to the first housing and the first portion of the second housing. A second set of sliding contact surfaces is defined on or connected to the first housing and the second portion of the second housing. The first and second sets of sliding contact surfaces are located on opposite sides of the motor such that the rotational axis of the motor intersects the first and second sets of sliding contact surfaces.

Abstract: According to one embodiment, the stacked body includes a plurality of metal films, a plurality of silicon oxide films, and a plurality of intermediate films. The intermediate films are provided between the metal films and the silicon oxide films. The intermediate films contain silicon nitride. Nitrogen composition ratios of the intermediate films are higher on sides of interfaces between the intermediate films and the metal films than on sides of interfaces between the intermediate films and the silicon oxide films. Silicon composition ratios of the intermediate films are higher on sides of interfaces between the intermediate films and the silicon oxide films than on sides of interfaces between the intermediate films and the metal films.

Abstract: A polyarylene sulfide resin powder/grain composition in which 100 weight parts of polyarylene sulfide resin powder/grain material whose average particle diameter exceeds 1 ?m and is less than or equal to 100 ?m and whose uniformity degree is less than or equal to 4 has been blended with 0.1 to 5 weight parts of an inorganic fine particle having an average particle diameter greater than or equal to 20 nm and less than or equal to 500 nm.

Abstract: A semiconductor device includes a stacked body including a plurality of electrode layers stacked with an insulator interposed; a columnar portion provided in the stacked body and extending in a stacking direction of the electrode layers; and a first separation region provided in the stacked body and extending in a first direction. The stacked body includes a memory cell array and a staircase portion arranged in the first direction, the memory cell array including memory cells provided along the columnar portion, and the staircase portion including a plurality of terraces arranged along the first direction. The first separation region includes a first portion and a second portion in the staircase portion, the first portion having a first width in a second direction crossing the first direction, and the second portion having a second width in the second direction. The second width is narrower than the first width.

Abstract: A method of manufacturing a semiconductor device uses a semiconductor manufacturing apparatus including a turn table allowing placement of at least first and second semiconductor substrates and being capable of moving positions of the first and the second semiconductor substrates by turning, a first film forming chamber, and a second film forming chamber. The first and the second film forming chambers are provided with an opening capable of loading and unloading the first and the second semiconductor substrates by lifting and lowering the first and the second semiconductor substrates placed on the turn table. The method includes transferring the first and the second semiconductor substrates between the first and the second film forming chambers by turning the turn fable and lifting and lowering the first and the second semiconductor substrates placed on the turn table; and forming a stack of films above the first and the second semiconductor substrates.

Abstract: According to one embodiment, a semiconductor device includes a substrate, a stacked body, a film having semi-conductivity or conductivity, and a memory film. The stacked body includes a plurality of metal layers, a plurality of insulating layers, and a plurality of intermediate layers stacked on a major surface of the substrate. The film extends in the stacked body in a stacking direction of the stacked body. The memory film is provided between the film and the metal layers. The metal layers are tungsten layers and the intermediate layers are tungsten nitride layers. Or the metal layers are molybdenum layers and the intermediate layers are molybdenum nitride layers.

Abstract: A semiconductor manufacturing method in accordance with an embodiment includes feeding a first gas, which contains a component of a first film, to a reaction chamber, and forming a first film over a semiconductor substrate, which is accommodated in the reaction chamber, through plasma CVD. The semiconductor manufacturing method includes feeding a second gas to the reaction chamber after forming the first film, allowing the first gas in the reaction chamber to react on the second gas, and forming a second film, which has a composition different from that of the first film, over the surface of the first film. The semiconductor manufacturing method includes selectively removing the second film.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched, the mask layer containing tungsten and boron, a composition ratio of the tungsten being not less than 30%, patterning the mask layer, and performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.

Abstract: A starting control device for an internal combustion engine is provided with a hard cranking device and a soft cranking device that are respectively capable of and incapable of cranking the internal combustion engine to a target idle rotation speed. The starting control device includes: a starting mode determination unit determining whether to carry out starting in a non-combustion pressure mode whereby starting is carried out with the hard cranking device, or in a combustion pressure combination mode whereby starting is carried out through cranking with the soft cranking device while using a combustion pressure generated by supplying fuel to the internal combustion engine in combination; and an intake air amount control unit making an amount of intake air during cranking differ between a case where starting is carried out in the non-combustion pressure mode and a case where starting is carried out in the combustion pressure combination mode.

Abstract: A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Abstract: To provide a spout apparatus whereby expansion and deformation of the inner wall surface of the vortex generating portion such that a desired Karman vortex cannot be generated are prevented, even when the port portion is formed of an elastically deformable soft member. A spout apparatus for discharging hot or cold water with reciprocal motion, having a spout apparatus body and a vortex generating passage; whereby the oscillating element has a supply passage, a vortex generating passage, and a spout port passage, and the spout port passage is formed by an elastically deformable soft member, and is attached to the spout apparatus body so that a user can manipulate and deform the spout port passage, and the vortex generating passage is formed so as not to expand and deform even if internal pressure rises due to the supply of hot or cold water from the supply passage.

Abstract: To provide a spout apparatus which is easily maintainable by a user even when, in a fluid device utilizing Karman vortices, scale adheres to the Karman vortex generating portion. A spout apparatus for discharging hot or cold water while causing it to reciprocally oscillate, having a spout apparatus body and an oscillating element; whereby the oscillating element has a water supply passage, a vortex generating passage, and a spout port passage; the spout port passage is formed of an elastically deformable soft member and is attached to the spout apparatus body so that a user can manipulate the spout port passage to deform it; and the vortex generating passage is formed of an elastically deformable soft member, and is integrally formed with the spout port passage so that deformations of the spout port passage can be transmitted to this vortex generating passage.

Abstract: To provide a transparent to translucent cosmetic composition which is highly stable, and can impart excellent actual feelings of effectiveness in use, such as a feeling of skin penetration, a feeling of non-stickiness, and a skin-softening effect after application thereof to the skin. A transparent to translucent cosmetic composition comprising: (a) a hydrogenated phospholipid, (b) one or more selected from among branched higher fatty acids and higher alcohols, and (c) a polyalcohol that acts as a good solvent and/or a poor solvent for component (a). Preferably, component (b) is isostearic acid and/or isostearyl alcohol. Preferably, the ratio of component (a)/component (b) is from 1/0.01 to 1/0.4 (by mass).

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched. The mask layer contains at least one type of a metal, boron, and carbon. The metal is selected from a group including tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium and iridium. A composition ratio of the metal is higher than a composition ratio of the boron and a composition ratio of the carbon. The method includes making a hole or a slit in the layer to be etched by performing a dry etching to the layer to be etched using the mask layer being patterned.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched, the mask layer containing tungsten and boron, a composition ratio of the tungsten being not less than 30%, patterning the mask layer, and performing a dry etching to the layer to be etched using the mask layer being patterned, and forming a hole or a slit in the layer to be etched.

Abstract: According to one embodiment, a semiconductor device includes a substrate, a stacked body, a second air gap, a first insulating film, a semiconductor film, and a stacked film. The stacked body is provided above the substrate and includes a plurality of electrode films stacked via a first air gap. The second air gap extends in a stacking direction of the stacked body. The second air gap separates the stacked body in a first direction crossing the stacking direction. The first insulating film is provided above the stacked body and covers an upper end of the second air gap. The stacked film is provided between a side surface of the electrode film and a side surface of the semiconductor film opposed to the side surface of the electrode film. The stacked film is in contact with the side surface of the electrode film and the side surface of the semiconductor film.

Abstract: A robot arm and a light are capable of varying and setting an image capturing condition of an object. A computer captures an image of the object with a camera in a state in which image capturing conditions of multiple kinds are set for the object by controlling the robot arm and the light in an image capturing process to acquire many original images corresponding to the respective image capturing conditions. The computer performs image processing on the original images corresponding to the respective image capturing conditions acquired in the image capturing process to generate reference images corresponding to the respective image capturing conditions.

Abstract: According to one embodiment, the stacked body includes a plurality of metal films, a plurality of silicon oxide films, and a plurality of intermediate films. The intermediate films are provided between the metal films and the silicon oxide films. The intermediate films contain silicon nitride. Nitrogen composition ratios of the intermediate films are higher on sides of interfaces between the intermediate films and the metal films than on sides of interfaces between the intermediate films and the silicon oxide films. Silicon composition ratios of the intermediate films are higher on sides of interfaces between the intermediate films and the silicon oxide films than on sides of interfaces between the intermediate films and the metal films.