Abstract: In a method for producing non-volatile semiconductor storage devices, a non-volatile semiconductor storage devices comprises a memory array (10) that includes a plurality of non-volatile storage elements and a plurality of spare storage elements, each of which enables information to be written/erased therein/therefrom electrically, and a storage element, if it is decided to be defective during a write operation, is replaced with one of the spare storage elements (10a), and information related to the defective storage element is stored in a predetermined area (10b) provided in the memory array. In the method, if the defective storage element is detected by a test, the information related to each detected defective storage element is not stored in the predetermined area of the memory array, and the one in which a rate of the defective storage elements detected by the test is under a predetermined value is extracted as a non-defective product.