Patents by Inventor Keigo Iizawa
Keigo Iizawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8237326Abstract: A surface acoustic wave device, includes: an interdigital transducer serving as an electrode pattern to excite a Rayleigh surface acoustic wave, the interdigital transducer including a comb-tooth-shaped electrode having a plurality of electrode fingers; a piezoelectric substrate on which the interdigital transducer is formed, the piezoelectric substrate being made of a quartz substrate that is cut out at a cut angle represented by an Euler angle representation (?, ?, ?) of (0°, 95°???155°, 33°?|?|?46°); electrode finger grooves formed between the electrode fingers of the comb-tooth-shaped electrode; and electrode finger bases being quartz portions sandwiched between the electrode finger grooves and having upper surfaces on which the electrode fingers are positioned. The surface acoustic wave device provides an excitation in an upper limit mode of a stop band of the surface acoustic wave.Type: GrantFiled: November 25, 2011Date of Patent: August 7, 2012Assignee: Seiko Epson CorporationInventor: Keigo Iizawa
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Publication number: 20120139653Abstract: A surface acoustic wave resonator which can realize favorable frequency-temperature characteristics and suppress frequency variations is provided. The surface acoustic wave resonator includes a quartz crystal substrate with Euler angles (?1.5°???1.5°, 117°???142°, and 42.79°?|?|?49.57°), and an IDT that is provided on the quartz crystal substrate, includes a plurality of electrode fingers, and excites a stop band upper end mode surface acoustic wave, wherein inter-electrode finger grooves are provided between the electrode fingers in a plan view, and wherein if a line occupation rate of convex portions of the quartz crystal substrate disposed between the inter-electrode finger grooves is ?g, and a line occupation rate of the electrode fingers disposed on the convex portions is ?e, ?g>?e and 0.59<?eff<0.73 are satisfied in a case where an effective line occupation rate ?eff of the IDT is an arithmetic mean of the line occupation rate ?g and the line occupation rate ?e.Type: ApplicationFiled: December 2, 2011Publication date: June 7, 2012Applicant: SEIKO EPSON CORPORATIONInventors: Takuya OWAKI, Kunihito YAMANAKA, Keigo IIZAWA, Kenichi HANO
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Publication number: 20120068791Abstract: A surface acoustic wave device, includes: an interdigital transducer serving as an electrode pattern to excite a Rayleigh surface acoustic wave, the interdigital transducer including a comb-tooth-shaped electrode having a plurality of electrode fingers; a piezoelectric substrate on which the interdigital transducer is formed, the piezoelectric substrate being made of a quartz substrate that is cut out at a cut angle represented by an Euler angle representation (?, ?, ?) of (0°, 95°???155°, 33°?|?|?46°); electrode finger grooves formed between the electrode fingers of the comb-tooth-shaped electrode; and electrode finger bases being quartz portions sandwiched between the electrode finger grooves and having upper surfaces on which the electrode fingers are positioned. The surface acoustic wave device provides an excitation in an upper limit mode of a stop band of the surface acoustic wave.Type: ApplicationFiled: November 25, 2011Publication date: March 22, 2012Applicant: SEIKO EPSON CORPORATIONInventor: Keigo IIZAWA
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Publication number: 20120049979Abstract: A surface acoustic wave resonator includes: an IDT which is disposed on a quartz substrate with Euler angles of (?1°???1°, 117°???142°, 42.79°?|?|?49.57°, which is made of Al or alloy including Al as a main component and which excites a surface acoustic wave in an upper mode of a stop band; and an inter-electrode-finger groove which is formed by recessing the quartz substrate between electrode fingers which form the IDT. Here, the following expression is satisfied: 0.01??G??(1), where ? represents a wavelength of the surface acoustic wave and G represents a depth of the inter-electrode-finger groove. The depth G of the inter-electrode-finger groove and a line occupancy ? of the IDT satisfy the following expression: - 2.5 × G ? + 0.675 ? ? ? - 2.5 × G ? + 0.775 ( 5 ) and a number of pairs N of the electrode fingers in the IDT is in the range of the following expression: 160?N?220??(19).Type: ApplicationFiled: August 18, 2011Publication date: March 1, 2012Applicant: SEIKO EPSON CORPORATIONInventors: Takuya OWAKI, Keigo IIZAWA, Kunihito YAMANAKA
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Patent number: 8084918Abstract: A surface acoustic wave device, includes: an interdigital transducer serving as an electrode pattern to excite a Rayleigh surface acoustic wave, the interdigital transducer including a comb-tooth-shaped electrode having a plurality of electrode fingers; a piezoelectric substrate on which the interdigital transducer is formed, the piezoelectric substrate being made of a quartz substrate that is cut out at a cut angle represented by an Euler angle representation (?, ?, ?) of (0°, 95°???155°, 33°?|?|?46°); electrode finger grooves formed between the electrode fingers of the comb-tooth-shaped electrode; and electrode finger bases being quartz portions sandwiched between the electrode finger grooves and having upper surfaces on which the electrode fingers are positioned. The surface acoustic wave device provides an excitation in an upper limit mode of a stop band of the surface acoustic wave.Type: GrantFiled: July 1, 2011Date of Patent: December 27, 2011Assignee: Seiko Epson CorporationInventor: Keigo Iizawa
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Patent number: 8063534Abstract: A surface acoustic wave device, includes: an interdigital transducer serving as an electrode pattern to excite a Rayleigh surface acoustic wave, the interdigital transducer including a comb-tooth-shaped electrode having a plurality of electrode fingers; a piezoelectric substrate on which the interdigital transducer is formed, the piezoelectric substrate being made of a quartz substrate that is cut out at a cut angle represented by an Euler angle representation (?, ?, ?) of (0°, 95°???155°, 33°?|?|?46°); electrode finger grooves formed between the electrode fingers of the comb-tooth-shaped electrode; and electrode finger bases being quartz portions sandwiched between the electrode finger grooves and having upper surfaces on which the electrode fingers are positioned. The surface acoustic wave device provides an excitation in an upper limit mode of a stop band of the surface acoustic wave.Type: GrantFiled: February 10, 2009Date of Patent: November 22, 2011Assignee: Seiko Epson CorporationInventor: Keigo Iizawa
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Publication number: 20110260809Abstract: A surface acoustic wave device, includes: an interdigital transducer serving as an electrode pattern to excite a Rayleigh surface acoustic wave, the interdigital transducer including a comb-tooth-shaped electrode having a plurality of electrode fingers; a piezoelectric substrate on which the interdigital transducer is formed, the piezoelectric substrate being made of a quartz substrate that is cut out at a cut angle represented by an Euler angle representation (?, ?, ?) of (0°, 95°???155°, 33°?|?|?46°); electrode finger grooves formed between the electrode fingers of the comb-tooth-shaped electrode; and electrode finger bases being quartz portions sandwiched between the electrode finger grooves and having upper surfaces on which the electrode fingers are positioned. The surface acoustic wave device provides an excitation in an upper limit mode of a stop band of the surface acoustic wave.Type: ApplicationFiled: July 1, 2011Publication date: October 27, 2011Applicant: Epson Toyocom CorporationInventor: Keigo IIZAWA
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Publication number: 20090206955Abstract: A surface acoustic wave device, includes: an interdigital transducer serving as an electrode pattern to excite a Rayleigh surface acoustic wave, the interdigital transducer including a comb-tooth-shaped electrode having a plurality of electrode fingers; a piezoelectric substrate on which the interdigital transducer is formed, the piezoelectric substrate being made of a quartz substrate that is cut out at a cut angle represented by an Euler angle representation (?, ?, ?) of (0°, 95°???155°, 33°?|?|?46°); electrode finger grooves formed between the electrode fingers of the comb-tooth-shaped electrode; and electrode finger bases being quartz portions sandwiched between the electrode finger grooves and having upper surfaces on which the electrode fingers are positioned The surface acoustic wave device provides an excitation in an upper limit mode of a stop band of the surface acoustic wave.Type: ApplicationFiled: February 10, 2009Publication date: August 20, 2009Applicant: EPSON TOYOCOM CORPORATIONInventor: Keigo IIZAWA
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Patent number: 7352104Abstract: A surface acoustic wave element is provided including an IDT and reflectors provided on both sides of the IDT that are on a surface of a quartz plate. The quartz plate is made from an in-plane rotated ST cut quartz plate whose cutting angle is expressed as (0°, 113°-135°, ±(40°-49°)) by defining and using Euler angle. The IDT and reflectors are arranged at a slant of PFA±3° with respect to a direction of a phase velocity of a surface acoustic wave in the quartz plate. If the cutting angle of the quartz plate is expressed by the Euler angle (?°, ?°, ?°), the power flow angle PFA is expressed that the PFA=0.374 (?°?90°)?10.0°.Type: GrantFiled: December 10, 2004Date of Patent: April 1, 2008Assignee: Seiko Epson CorporationInventors: Takashi Yamazaki, Keigo Iizawa
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Patent number: 6946932Abstract: In a substrate in which a reflection coefficient ? of a surface acoustic wave per electrode is small, the invention obtains a Q value or a CI value level, which is equivalent to or higher than that of a related art product, at a device size which is equivalent to the related art product which addresses the problem that the size of a surface acoustic wave resonator becomes larger. A surface acoustic wave resonator includes one interdigital transducer to excite a surface acoustic wave in a propagation direction x on a piezoelectric plate and a pair of reflectors arranged on both sides thereof in the propagation direction. The interdigital transducer is divided into three regions. The electrode fingers of the interdigital transducer of each region are formed at a fixed pitch which differs within 2%. The surface acoustic wave resonator possesses a single peak response.Type: GrantFiled: October 7, 2003Date of Patent: September 20, 2005Assignee: Seiko Epson CorporationInventors: Michiaki Takagi, Yoshio Maeda, Takashi Yamazaki, Keigo Iizawa
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Publication number: 20050127781Abstract: A surface acoustic wave element is provided including an IDT and reflectors provided on both sides of the IDT that are on a surface of a quartz plate. The quartz plate is made from an in-plane rotated ST cut quartz plate whose cutting angle is expressed as (0°, 113°-135°, ±(40°-49°)) by defining and using Euler angle. The IDT and reflectors are arranged at a slant of PFA±3° with respect to a direction of a phase velocity of a surface acoustic wave in the quartz plate. If the cutting angle of the quartz plate is expressed by the Euler angle (?°, ?°, ?°), the power flow angle PFA is expressed that the PFA=0.374 (?°?90°)?10.0°.Type: ApplicationFiled: December 10, 2004Publication date: June 16, 2005Inventors: Takashi Yamazaki, Keigo Iizawa
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Patent number: 6856218Abstract: The invention provides an in-plane rotational ST-cut SAW resonator that is formed of an in-plane rotational ST-cut crystal plate having Eulerian angles of (0°, 113° to 135°, and ±(40° to 49°)). The in-plane rotational ST-cut SAW resonator can include an interdigital transducer (IDT) electrode for exciting a Rayleigh wave on the main surface. The ratio Lt/Pt of the electrode width Lt and the interelectrode pitch Pt of the IDT electrode is 0.5 or more and 0.65 or less. Accordingly, a reduction in the fluctuation in resonance frequency relative to the variations in an IDT electrode of a surface acoustic wave device by using the in-plane rotated ST-cut crystal plate around the Z?-axis can be achieved.Type: GrantFiled: December 27, 2002Date of Patent: February 15, 2005Assignee: Seiko Epson CorporationInventors: Takashi Yamazaki, Keigo Iizawa, Shigeo Kanna
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Publication number: 20040251989Abstract: In a substrate in which a reflection coefficient &ggr; of a surface acoustic wave per electrode is small, the invention obtains a Q value or a CI value level, which is equivalent to or higher than that of a related art product, at a device size which is equivalent to the related art product which addresses the problem that the size of a surface acoustic wave resonator becomes larger. A surface acoustic wave resonator includes one interdigital transducer to excite a surface acoustic wave in a propagation direction x on a piezoelectric plate and a pair of reflectors arranged on both sides thereof in the propagation direction. The interdigital transducer is divided into three regions. The electrode fingers of the interdigital transducer of each region are formed at a fixed pitch which differs within 2%. The surface acoustic wave resonator possesses a single peak response.Type: ApplicationFiled: October 7, 2003Publication date: December 16, 2004Applicant: SEIKO EPSON CORPORATIONInventors: Michiaki Takagi, Yoshio Maeda, Takashi Yamazaki, Keigo Iizawa
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Patent number: 6784595Abstract: The invention provides a method for adjusting the temperature-dependent property of a surface acoustic wave device is provided,, The method is appropriate for a temperature-dependent property that is expressed by a cubic function of a surface acoustic wave device using an in-plane rotated ST cut quartz crystal plate. The invention therefore provides a method for adjusting the temperature-dependent property of a surface acoustic wave device using an in-plane rotated ST cut quartz crystal plate having Euler angles of (0°, 113-135°, ±(40-49°)). The range of Euler angles is defined so that the temperature-dependent property of the surface acoustic wave device, using an in-plane rotated ST cut quartz crystal plate having the temperature-dependent property expressed by a cubic function, has an extreme value within the temperature range of −40 to +85° C.Type: GrantFiled: August 28, 2002Date of Patent: August 31, 2004Assignee: Seiko Epson CorporationInventors: Keigo Iizawa, Takashi Yamazaki, Shigeo Kanna
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Patent number: 6774747Abstract: The invention provides a surface acoustic wave device which uses an in-plane rotated ST cut quartz crystal plate around the Z′-axis, and which has a large reflection coefficient of the Rayleigh wave. Comb teeth-like IDT electrodes are provided and reflectors to trap the Rayleigh wave are provided on both sides of the IDT electrodes on the principal surface of the in-plane rotated ST cut quartz crystal plate. The electrode width and pitch at the IDT electrodes are defined as Lt, Pt, the width and pitch of short-circuit electrodes at the reflectors as Lr, Pr, and the thickness of the IDT electrodes and the short-circuit electrodes side as Ht and Hr. If the electrode widths and pitches are set up so that either or both of Lt/Pt and Lr/Pr become 0.32±0.1, this enables maximizing the reflection coefficient and achieving the miniaturization of device itself by reducing the number of the short-circuit electrodes.Type: GrantFiled: August 5, 2002Date of Patent: August 10, 2004Assignee: Seiko Epson CorporationInventors: Takashi Yamazaki, Keigo Iizawa, Shigeo Kanna
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Publication number: 20030146810Abstract: The invention provides an in-plane rotational ST-cut SAW resonator that is formed of an in-plane rotational ST-cut crystal plate having Eulerian angles of (0°, 113° to 135°, and ±(40° to 49°)). The in-plane rotational ST-cut SAW resonator can include an interdigital transducer (IDT) electrode for exciting a Rayleigh wave on the main surface. The ratio Lt/Pt of the electrode width Lt and the interelectrode pitch Pt of the IDT electrode is 0.5 or more and 0.65 or less. Accordingly, a reduction in the fluctuation in resonance frequency relative to the variations in an IDT electrode of a surface acoustic wave device by using the in-plane rotated ST-cut crystal plate around the Z′-axis can be achieved.Type: ApplicationFiled: December 27, 2002Publication date: August 7, 2003Applicant: SEIKO EPSON CORPORATIONInventors: Takashi Yamazaki, Keigo Iizawa, Shigeo Kanna
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Publication number: 20030052572Abstract: The invention provides a method for adjusting the temperature-dependent property of a surface acoustic wave device is provided. The method is appropriate for a temperature-dependent property that is expressed by a cubic function of a surface acoustic wave device using an in-plane rotated ST cut quartz crystal plate. The invention therefore provides a method for adjusting the temperature-dependent property of a surface acoustic wave device using an in-plane rotated ST cut quartz crystal plate having Euler angles of (0°, 113-135°, ±(40-49°)). The range of Euler angles is defined so that the temperature-dependent property of the surface acoustic wave device, using an in-plane rotated ST cut quartz crystal plate having the temperature-dependent property expressed by a cubic function, has an extreme value within the temperature range of −40 to +85° C.Type: ApplicationFiled: August 28, 2002Publication date: March 20, 2003Applicant: SEIKO EPSON CORPORATIONInventors: Keigo Iizawa, Takashi Yamazaki, Shigeo Kanna
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Publication number: 20030030513Abstract: The invention provides a surface acoustic wave device which uses an in-plane rotated ST cut quartz crystal plate around the Z′-axis, and which has a large reflection coefficient of the Rayleigh wave. Comb teeth-like IDT electrodes are provided and reflectors to trap the Rayleigh wave are provided on both sides of the IDT electrodes on the principal surface of the in-plane rotated ST cut quartz crystal plate. The electrode width and pitch at the IDT electrodes are defined as Lt, Pt, the width and pitch of short-circuit electrodes at the reflectors as Lr, Pr, and the thickness of the IDT electrodes and the short-circuit electrodes side as Ht and Hr. If the electrode widths and pitches are set up so that either or both of Lt/Pt and Lr/Pr become 0.32±0.1, this enables maximizing the reflection coefficient and achieving the miniaturization of device itself by reducing the number of the short-circuit electrodes.Type: ApplicationFiled: August 5, 2002Publication date: February 13, 2003Applicant: SEIKO EPSON CORPORATIONInventors: Takashi Yamazaki, Keigo Iizawa, Shigeo Kanna