Abstract: An electrostatic chuck device comprising: a placing table having a placing surface on which a plate-shaped sample is placed, an electrostatic attraction electrode, which is located on a lower side of the placing table in such a manner that the electrode is located on a surface side opposite to the placing surface of the placing table, a base part on which at least the placing table and the electrostatic attraction electrode are mounted, a focus ring which surrounds the placing table wherein the focus ring is a continuous ring or is divided into two or more portions, and a lift pin which is movable in an up-down direction and raises the entirety of or at least a part of the focus ring from the base part.

Abstract: An electrostatic chuck device comprising: a placing table having a placing surface on which a plate-shaped sample is placed, an electrostatic attraction electrode, which is located on a lower side of the placing table in such a manner that the electrode is located on a surface side opposite to the mounting surface of the placing table, a base part on which at least the placing table and the electrostatic attraction electrode are mounted, a focus ring which surrounds the placing table wherein the focus ring is a continuous ring or is divided into two or more portions, and a lift pin which is movable in an up-down direction and raises the entirety of or at least a part of the focus ring from the base part.

Abstract: An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10?2 ?cm or less.

Abstract: An electrostatic chuck device which enables to perform a plasma process having high in-plane uniformity to a plane-like sample by improving the in-plane uniformity of the electric field intensity in a plasma when applied to a plasma processing apparatus. Specifically disclosed is an electrostatic chuck device (21) including an electrostatic chuck section (22), a metal base section (23) serving as a high-frequency generating electrode, and an insulating plate (24). The electrostatic chuck section (22) is composed of a dielectric plate (31) whose top surface (31a) serves as a mounting surface on which a plate-like sample (W) is placed, a supporting plate (32), an electrostatic-adsorption inner electrode (25), and an insulating layer (33). The electrostatic-adsorption inner electrode (25) is made of a composite sintered body containing an insulating ceramic and silicon carbide, while having a volumetric resistance of not less than 1.0×10?1 ?cm but not more than 1.0×108 ?cm.

Abstract: A method for manufacturing a semiconductor device, the semiconductor device including an integrated circuit having plural connection terminals arranged on a predetermined local region of the integrated circuit, plural metal bumps, and a wiring layer connected to at least a portion of the connection terminals via the plural metal bumps, the method includes the steps of a) measuring an impedance value of the predetermined local region of the integrated circuit, b) determining whether the measured impedance value matches a predetermined impedance value, c) determining positions of the plural metal bumps in accordance with the determination result of step b), d) forming the plural metal bumps on the positions determined in step c), and e) forming the wiring layer on the plural metal bumps.

Abstract: A method for manufacturing a semiconductor device, the semiconductor device including an integrated circuit having plural connection terminals arranged on a predetermined local region of the integrated circuit, plural metal bumps, and a wiring layer connected to at least a portion of the connection terminals via the plural metal bumps, the method includes the steps of a) measuring an impedance value of the predetermined local region of the integrated circuit, b) determining whether the measured impedance value matches a predetermined impedance value, c) determining positions of the plural metal bumps in accordance with the determination result of step b), d) forming the plural metal bumps on the positions determined in step c), and e) forming the wiring layer on the plural metal bumps.

Abstract: A susceptor device comprises a base body, an electrostatic absorbing inner electrode which is disposed on a bottom surface of the base body, a power supplying terminal, an insulating sprayed layer which coats the electrostatic absorbing inner electrode and a connecting section for the power supplying terminal and the electrostatic absorbing inner electrode, and a temperature controlling section. The insulating sprayed layer and the temperature controlling section are attached together unitarily via the bonding agent layer. The flange of the base body fits to a notched section of the temperature controlling section such that the electrostatic absorbing inner electrode, insulating sprayed layer, and the bonding agent layer should be sealed from thereoutside. It is possible to form a thin supporting plate and improve controllability for temperature on the plate sample and transparency for the plasma.

Abstract: An electrostatic chuck device which enables to perform a plasma process having high in-plane uniformity to a plane-like sample by improving the in-plane uniformity of the electric field intensity in a plasma when applied to a plasma processing apparatus. Specifically disclosed is an electrostatic chuck device (21) including an electrostatic chuck section (22), a metal base section (23) serving as a high-frequency generating electrode, and an insulating plate (24). The electrostatic chuck section (22) is composed of a dielectric plate (31) whose top surface (31a) serves as a mounting surface on which a plate-like sample (W) is placed, a supporting plate (32), an electrostatic-adsorption inner electrode (25), and an insulating layer (33). The electrostatic-adsorption inner electrode (25) is made of a composite sintered body containing an insulating ceramic and silicon carbide, while having a volumetric resistance of not less than 1.0×10?1 ?cm but not more than 1.0×108 ?cm.

Abstract: An electrostatic chuck device includes an electrostatic chuck section including a substrate and a power supply terminal for applying a DC voltage to an electrostatic-adsorption inner electrode; and a metal base section fixed to the other main surface of the electrostatic chuck section. Here, a concave portion is formed in the main surface of the metal base section facing the electrostatic chuck section and a dielectric plate is fixed to the concave portion. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric constant of the insulating adhesive bonding layer is smaller than that of any one of the dielectric plate and the substrate.

Abstract: An electrode structure body of the present invention is composed of a metal electrode, and a solder alloy layer (a tin/nickel alloy layer) formed on a surface of the metal electrode. The solder alloy layer is obtained by reflow-heating the solder layer formed on the metal electrode and then removing the solder layer. This electrode structure body can be applied to an external connection electrode of an electronic component or a mounting substrate.

Abstract: An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10?2?cm or less.

Abstract: An electrostatic chuck device includes: an electrostatic chuck section including a substrate, which has a main surface serving as a mounting surface on which a plate-like sample is mounted and an electrostatic-adsorption inner electrode built therein, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode; and a metal base section that is fixed to the other main surface of the electrostatic chuck section so as to be incorporated into a body and that serves as a high frequency generating electrode. Here, the volume resistivity of the electrostatic-adsorption inner electrode is in the range of 1.0×10?1?cm to 1.0×108 ?cm.

Abstract: An electrostatic chuck device includes an electrostatic chuck section including a substrate and a power supply terminal for applying a DC voltage to an electrostatic-adsorption inner electrode; and a metal base section fixed to the other main surface of the electrostatic chuck section. Here, a concave portion is formed in the main surface of the metal base section facing the electrostatic chuck section and a dielectric plate is fixed to the concave portion. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric constant of the insulating adhesive bonding layer is smaller than that of any one of the dielectric plate and the substrate.

Abstract: A susceptor device comprises a base body, an electrostatic absorbing inner electrode which is disposed on a bottom surface b of the base body, a power supplying terminal, an insulating sprayed layer which coats the electrostatic absorbing inner electrode and a connecting section for the power supplying terminal and the electrostatic absorbing inner electrode, and a temperature controlling section. The insulating sprayed layer and the temperature controlling section are attached together unitarily via the bonding agent layer. The flange c of the base body fits to a notched section a of the temperature controlling section such that the electrostatic absorbing inner electrode, insulating sprayed layer, and the bonding agent layer should be sealed from thereoutside. It is possible to form a thin supporting plate and improve controllability for temperature on the plate sample and transparency for the plasma.

Abstract: There is provided a susceptor with a built-in electrode that has excellent corrosion resistance and plasma resistance, and that has excellent durability to the stress of heat cycles, and a manufacturing method for a susceptor with a built-in electrode that enables the susceptor to be manufactured economically. The susceptor with a built-in electrode comprises: a susceptor substrate formed from an aluminum oxide based sintered body; an internal electrode built into the susceptor substrate; and a power supply terminal that is provided so as to make contact with this internal electrode, wherein the internal electrode is formed from an aluminum oxide and molybdenum carbide based composite sintered body containing 30 to 95 volume % of molybdenum carbide and 5 to 75 volume % of aluminum oxide.

Abstract: There is provided a susceptor with a built-in electrode that has excellent corrosion resistance and plasma resistance, and that has excellent durability to the stress of heat cycles, and a manufacturing method for a susceptor with a built-in electrode that enables the susceptor to be manufactured economically. The susceptor with a built-in electrode comprises: a susceptor substrate formed from an aluminum oxide based sintered body; an internal electrode built into the susceptor substrate; and a power supply terminal that is provided so as to make contact with this internal electrode, wherein the internal electrode is formed from an aluminum oxide and molybdenum carbide based composite sintered body containing 30 to 95 volume % of molybdenum carbide and 5 to 75 volume % of aluminum oxide.