Abstract: There is provided a technique that includes: removing a deposit that adheres to an interior of a process chamber by performing a cycle a predetermined number of times, the cycle including performing sequentially: (a) supplying a cleaning gas to the interior of the process chamber until an internal pressure of the process chamber rises to a first pressure range; (b) exhausting the interior of the process chamber and supplying the cleaning gas to the interior of the process chamber in parallel to maintain the internal pressure of the process chamber within the first pressure range; and (c) exhausting the interior of the process chamber until the internal pressure of the process chamber reaches a second pressure that is below the first pressure range.

Abstract: There is provided a technique that includes removing a substance adhering to the interior of the process container by performing a cycle a predetermined number of times under a first temperature, the cycle including: (a) supplying one gas of a nitrogen- and hydrogen-containing gas and a fluorine-containing gas into the process container after a substrate is processed; and (b) supplying the other gas different from the one gas of the nitrogen- and hydrogen-containing gas and the fluorine-containing gas into the process container where the one gas remains.

Abstract: There is provided a technique that includes removing a substance adhering to the interior of the process container by performing a cycle a predetermined number of times under a first temperature, the cycle including: (a) supplying one gas of a nitrogen- and hydrogen-containing gas and a fluorine-containing gas into the process container after a substrate is processed; and (b) supplying the other gas different from the one gas of the nitrogen- and hydrogen-containing gas and the fluorine-containing gas into the process container where the one gas remains.

Abstract: There is provided a technique that includes forming a film containing a predetermined element, oxygen, and nitrogen on the substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a first precursor containing the predetermined element to the substrate; (b) supplying a second precursor having a molecular structure different from a molecular structure of the first precursor and containing the predetermined element and oxygen; (c) supplying an oxidizing agent to the substrate; and (d) supplying a nitriding agent to the substrate.

Abstract: There is provided a technique that includes: (a) forming a first element-containing film on a substrate by supplying a first element-containing gas to the substrate in an oxygen-free atmosphere; and (b) forming an oxide film by oxidizing the first element-containing film by supplying an oxygen-containing gas to the substrate, wherein in (b), temperature of the substrate is selected depending on a thickness of the first element-containing film.

Abstract: There is provided a technique that includes: (a) arranging a plurality of first substrates and a second substrate having a smaller surface area than the first substrates and accommodating the plurality of first substrates and the second substrate in a process chamber; and (b) forming a thin film on each of the plurality of first substrates by supplying a processing gas to a substrate arrangement region in which the plurality of first substrates and the second substrate are arranged, wherein (b) includes: (c) supplying a dilution gas to a first supply region of the substrate arrangement region, or not performing a supply of the dilution gas to the first supply region, and supplying the dilution gas to at least one second supply region of the substrate arrangement region at a flow rate larger than a flow rate of the dilution gas supplied to the first supply region.

Abstract: To provide a light emitting device that has an excellent color rendering property and a high light emission efficiency, and a lightening fixture provided with the same.

Abstract: There is provided a technique that includes: (a) arranging a plurality of first substrates and a second substrate having a smaller surface area than the first substrates and accommodating the plurality of first substrates and the second substrate in a process chamber; and (b) forming a thin film on each of the plurality of first substrates by supplying a processing gas to a substrate arrangement region in which the plurality of first substrates and the second substrate are arranged, wherein (b) includes: (c) supplying a dilution gas to a first supply region of the substrate arrangement region, or not performing a supply of the dilution gas to the first supply region, and supplying the dilution gas to at least one second supply region of the substrate arrangement region at a flow rate larger than a flow rate of the dilution gas supplied to the first supply region.

Abstract: There is provided a technique that includes a first nozzle configured to supply a process gas to a process chamber that processes a substrate, a second nozzle arranged to be spaced apart by a predetermined distance from the first nozzle in a circumferential direction of the substrate and configured to supply an inert gas to the process chamber, and a reaction container defining the process chamber therein and including a first protrusion protruding outward to accommodate the first nozzle and a second protrusion protruding outward to accommodate the second nozzle.

Abstract: There is provided a technique that includes removing a substance adhering to the interior of the process container by performing a cycle a predetermined number of times under a first temperature, the cycle including: (a) supplying one gas of a nitrogen- and hydrogen-containing gas and a fluorine-containing gas into the process container after a substrate is processed; and (b) supplying the other gas different from the one gas of the nitrogen- and hydrogen-containing gas and the fluorine-containing gas into the process container where the one gas remains.

Abstract: There is provided a technique that includes: removing a deposit that adheres to an interior of a process chamber by performing a cycle a predetermined number of times, the cycle including performing sequentially: (a) supplying a cleaning gas to the interior of the process chamber until an internal pressure of the process chamber rises to a first pressure range; (b) exhausting the interior of the process chamber and supplying the cleaning gas to the interior of the process chamber in parallel to maintain the internal pressure of the process chamber within the first pressure range; and (c) exhausting the interior of the process chamber until the internal pressure of the process chamber reaches a second pressure that is below the first pressure range.

Abstract: Described herein is a technique capable of improving a controllability of a thickness distribution of an oxide film formed on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas to a heated substrate at a first pressure less than an atmospheric pressure and by oxidizing a surface of the substrate; and (b) forming a second oxide layer by supplying the oxygen-containing gas and the hydrogen-containing gas to the heated substrate at a second pressure less than the atmospheric pressure and different from the first pressure and by oxidizing the surface of the substrate on which the first oxide layer is formed.

Abstract: There is provided a technique that includes: (a) arranging a plurality of first substrates and a second substrate having a smaller surface area than the first substrates and accommodating the plurality of first substrates and the second substrate in a process chamber; and (b) forming a thin film on each of the plurality of first substrates by supplying a processing gas to a substrate arrangement region in which the plurality of first substrates and the second substrate are arranged, wherein (b) includes: (c) supplying a dilution gas to a first supply region of the substrate arrangement region, or not performing a supply of the dilution gas to the first supply region, and supplying the dilution gas to at least one second supply region of the substrate arrangement region at a flow rate larger than a flow rate of the dilution gas supplied to the first supply region.

Abstract: A light emitting device includes a resin package including: a first lead and a second lead, each including a top surface and a bottom surface, and a first resin portion located between the first lead and the second lead and extending in a first direction; a first light emitting element and a second light emitting element arrayed on the top surface of the first lead in the first direction, the first light emitting element and the second light emitting element each including at least a first side surface; and an encapsulant located on the top surface of the first lead and covering the first light emitting element and the second light emitting element. The first side surface of the first light emitting element and the first side surface of the second light emitting element partially face each other.

Abstract: A condenser includes a container into which steam is to flow, cooling pipes which are positioned inside the container and configured to cool the steam so as to form condensed water, at least one extraction pipe for extracting air included inside the container, at least one extraction hole which is defined in the extraction pipe and through which an interior of the at least one extraction pipe and an interior of the container communicate with each other, and a cylindrical cover which is configured with a gap spaced from the at least one extraction pipe and covers the at least one extraction hole so as to regulate an inflow of the condensed water into the at least one extraction hole. A plurality of the extraction holes are formed around the extraction pipe, and the cylindrical cover is radially outside the at least one extraction pipe with the gap spaced therebetween.

Abstract: A light emitting device includes a resin package including: a first lead and a second lead, each including a top surface and a bottom surface, and a first resin portion located between the first lead and the second lead and extending in a first direction; a first light emitting element and a second light emitting element arrayed on the top surface of the first lead in the first direction, the first light emitting element and the second light emitting element each including at least a first side surface; and an encapsulant located on the top surface of the first lead and covering the first light emitting element and the second light emitting element. The first side surface of the first light emitting element and the first side surface of the second light emitting element partially face each other.

Abstract: A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.

Abstract: A condenser of the present invention includes a container into which steam flows, cooling pipes which are provided inside the container and cool the steam to form condensed water, at least one extraction pipe for extracting air included inside the container, at least one extraction hole which is formed in the extraction pipe and through which an interior of the extraction pipe and an interior of the container communicate with each other, and a cylindrical cover which is provided with a predetermined gap spaced from the extraction pipe and covers the at least one extraction hole to regulate an inflow of the condensed water into the at least one extraction hole. A plurality of the extraction holes are formed around the extraction pipe, and the cylindrical cover is provided radially outside the extraction pipe with the predetermined gap spaced therebetween.

Abstract: A film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei. A time required for the nucleus growth suppression process is less than or equal to a time required for the nucleus formation process. Alternatively, the nucleus formation process is further performed after the cycle is repeatedly performed a plurality of times.

Abstract: Provided is duct equipment including a duct body, a heat insulating material, a external cover, a fiber-reinforced sheet, and fiber-reinforced moldings. The duct body includes a duct wall, a duct passage defined by the duct wall, and duct corners formed in the duct wall when viewed in a cross-section in a direction intersecting a direction in which the duct passage extends. The heat insulating material is installed on an outer circumference of the duct body. The external cover includes a external cover wall installed on an outer circumference of the heat insulating material, and external cover corners formed alone the duct corners. The fiber-reinforced sheet is disposed on the outer circumference of the duct body via an adhesive layer. The fiber-reinforced moldings are disposed adjacent to the fiber-reinforced sheet along the external cover corners via adhesive layers, and have a substantially L-shape when viewed in the cross-section.