Abstract: A polishing method capable of removing waviness on a resin-coated surface having a curved surface is provided. The resin-coated surface having the curved surface is polished by using a polishing pad having a polishing surface formed of a hard resin layer.

Abstract: A polishing method capable of removing waviness on a resin-coated surface having a curved surface is provided. The resin-coated surface having the curved surface is polished by using a polishing pad having a polishing surface formed of a hard resin layer.

Abstract: A polishing pad capable of removing waviness of a surface of a polishing target having a curved surface is provided. A polishing pad (10) includes a structure (40, 50) including a polishing surface (30) formed of a hard resin layer (40), the structure (40, 50) allowing the polishing surface (30) to follow a curved surface of a polishing target (90).

Abstract: There is provided a polishing composition, containing abrasive grains and an acid represented either by R2—R1—SO3H (wherein R1 is a linear alkylene or hydroxyalkylene group having 1 to 4 carbon atoms, and R2 is a hydroxy group, a carboxy group, or a sulfonic acid group when R1 is the linear alkylene group, or R2 is a carboxy group or a hydroxymethyl group when R1 is the linear hydroxyalkylene group), or by C6H5—R3 (wherein R3 is a sulfonic acid group or a phosphonic acid group). The acid contained in the polishing composition is preferably isethionic acid or benzenesulfonic acid. The polishing composition is mainly used in the application of polishing silicon oxide materials including glass substrates for hard disks, synthetic quartz substrates for photomasks, and low-dielectric-constant films such as silicon dioxide films, BPSG films, PSG films, FSG films, and organosiloxane films of semiconductor devices.

Abstract: There is provided a polishing composition, containing abrasive grains and an acid represented either by R2—R1—SO3H (wherein R1 is a linear alkylene or hydroxyalkylene group having 1 to 4 carbon atoms, and R2 is a hydroxy group, a carboxy group, or a sulfonic acid group when R1 is the linear alkylene group, or R2 is a carboxy group or a hydroxymethyl group when R1 is the linear hydroxyalkylene group), or by C6H5—R3 (wherein R3 is a sulfonic acid group or a phosphonic acid group). The acid contained in the polishing composition is preferably isethionic acid or benzenesulfonic acid. The polishing composition is mainly used in the application of polishing silicon oxide materials including glass substrates for hard disks, synthetic quartz substrates for photomasks, and low-dielectric-constant films such as silicon dioxide films, BPSG films, PSG films, FSG films, and organosiloxane films of semiconductor devices.

Abstract: A polishing composition contains silicon dioxide, an alkaline compound, and water. Silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The alkaline compound is, for example, ammonium carbonate, potassium carbonate, sodium carbonate, ammonium hydrogen carbonate, potassium hydrogen carbonate, sodium hydrogen carbonate, ammonium phosphate, potassium phosphate, sodium phosphate, ammonium hydrogen phosphate, potassium hydrogen phosphate, or sodium hydrogen phosphate. The polishing composition can be suitably used in applications for polishing a glass substrate.

Abstract: A polishing composition of the present invention contains silicon dioxide, an acid, and water. Silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The acid is, for example, hydrochloric acid, phosphoric acid, sulfuric acid, phosphonic acid, nitric acid, phosphinic acid, boric acid, acetic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, methanesulfonic acid, formic acid, malic acid, gluconic acid, alanine, glycin, lactic acid, hydroxyethylidene diphosphonic acid, nitrilotris(methylene phosphonic acid), or phosphonobutane tricarboxylic acid. The pH of the polishing composition is preferably in the range of 0.5 to 6. The polishing composition can be suitably used in applications for polishing a glass substrate.

Abstract: A polishing composition contains silicon dioxide, an alkaline compound, and water. Silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The alkaline compound is, for example, ammonium carbonate, potassium carbonate, sodium carbonate, ammonium hydrogen carbonate, potassium hydrogen carbonate, sodium hydrogen carbonate, ammonium phosphate, potassium phosphate, sodium phosphate, ammonium hydrogen phosphate, potassium hydrogen phosphate, or sodium hydrogen phosphate. The polishing composition can be suitably used in applications for polishing a glass substrate.

Abstract: A polishing composition of the present invention contains silicon dioxide, an acid, and water. Silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The acid is, for example, hydrochloric acid, phosphoric acid, sulfuric acid, phosphonic acid, nitric acid, phosphinic acid, boric acid, acetic acid, itaconic acid, succinic acid, tartaric acid, citric acid, maleic acid, glycolic acid, malonic acid, methanesulfonic acid, formic acid, malic acid, gluconic acid, alanine, glycin, lactic acid, hydroxyethylidene diphosphonic acid, nitrilotris(methylene phosphonic acid), or phosphonobutane tricarboxylic acid. The pH of the polishing composition is preferably in the range of 0.5 to 6. The polishing composition can be suitably used in applications for polishing a glass substrate.

Abstract: A polishing composition for a magnetic disk substrate to be used for a memory hard disk, which comprises: (a) colloidal silica as an abrasive in an amount within a range of from 0.1 to 35 wt % based on the total weight of the composition; (b) iron nitrate as a polishing accelerator in an amount within a range of from 0.04 to 2.2 wt % based on the total weight of the composition; (c) citric acid as a stabilizer in an amount within a range of from 0.4 to 22 wt % based on the total weight of the composition; (d) hydrogen peroxide as a polishing acceleration assistant in an amount within a range of from 0.155 to 9.3 wt % based on the total weight of the composition; and (e) water.

Abstract: A polishing composition for polishing a memory hard disk, which comprises water and at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide and which further contains an iron chelate complex dissolved in the composition, the iron chelate complex having a nitrogen-containing compound as a ligand, and the pH of the entire composition being from 6 to 10.

Abstract: A polishing composition for polishing a memory hard disk comprising water and at least one abrasive selected from the group consisting of silicon dioxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, silicon nitride and manganese dioxide, which further contains an iron compound dissolved in the composition, said iron compound being selected from the group consisting of iron(III) nitrate, iron(III) sulfate, ammonium iron(III) sulfate, iron(III) perchlorate and an ion salt of an organic acid.