Abstract: The present invention is intended to provide a cell for an ultraviolet irradiation module and an ultraviolet irradiation module with which it is possible to improve the efficiency of sterilizing an object to be irradiated to a greater extent than in the past. The cell for an ultraviolet irradiation module includes a case being at least partially formed of polytetrafluoroethylene having a crystallite size in a direction of 60 nm or more and 250 nm or less and having an internal space into which an object to be irradiated can be introduced.

Abstract: The present invention is intended to provide a cell for an ultraviolet irradiation module and an ultraviolet irradiation module with which it is possible to improve the efficiency of sterilizing an object to be irradiated to a greater extent than in the past. The cell for an ultraviolet irradiation module includes a case being at least partially formed of polytetrafluoroethylene having a crystallite size in a direction of 60 nm or more and 250 nm or less and having an internal space into which an object to be irradiated can be introduced.

Abstract: Disclosed is a layered product for metamaterial transfer for transferring a metamaterial layer onto a substrate, including: a resin mold having a fine convex-concave structure on a surface; and an inorganic layer as a metamaterial layer including at least one dielectric layer and at least one metal layer deposited on a surface of the resin mold, wherein resin of the resin mold contains fluorine, and a ratio between an average elemental fluorine concentration Eb of the resin and an elemental fluorine concentration Es of the surface of the resin mold satisfies the following equation: 200?Es/Eb?5.0.

Abstract: Disclosed is a layered product for metamaterial transfer for transferring a metamaterial layer onto a substrate, including: a resin mold having a fine convex-concave structure on a surface; and an inorganic layer as a metamaterial layer including at least one dielectric layer and at least one metal layer deposited on a surface of the resin mold, wherein resin of the resin mold contains fluorine, and a ratio between an average elemental fluorine concentration Eb of the resin and an elemental fluorine concentration Es of the surface of the resin mold satisfies the following equation: 200?Es/Eb?5.0.

Abstract: An optical information recording medium which can eliminate the necessity for the initialization process. A crystallization assisting layer (3) comprising a given material is formed over a substrate (1) on one side thereof, and a recording layer (4) comprising a Ge—Sb—Te alloy is formed directly on the layer (3). Since the recording layer (4) crystallizes immediately after film formation, no initialization process is necessary for the optical information recording medium obtained. Examples of the material of the crystallization assisting layer firstly include materials having a face-centered cubic lattice system crystal structure. Examples thereof secondly include tellurium-free materials having a rhombohedral lattice system crystal structure. An especially preferred crystallization assisting layer is a discontinuous island-like film made of a material comprising bismuth and/or a bismuth compound.

Abstract: To improve photocurrent characteristics of a molecule detecting sensor, the molecule detecting sensor is formed in the steps of: depositing a first silicon layer (12) on a R-plane sapphire substrate (11); turning the first silicon layer (12) amorphous by implanting silicon ions thereinto in the vicinity of the silicon layer-sapphire substrate interface; recrystallizing an amorphous silicon layer by heat treatment; oxidizing part of the first silicon layer (12) by introducing a recrystallized silicon layer into an oxidation furnace; removing a silicon oxide film (13) formed by an oxidation; depositing a second silicon layer (15) on a seed silicon layer (14) which is a first silicon layer left after removing the steps of forming an insulator layer (3) on a single crystal silicon layer (2) which is a laminated structure made up of the seed silicon layer (14) and the second silicon layer (15); and placing an electrolyte (4) on the insulator layer.

Abstract: An optical information recording medium which can eliminate the necessity for the initialization process. A crystallization assisted layer (3) comprising a given material is formed over a substrate (1) on one side thereof, and a recording layer (4) comprising a Ge—Sb—Te alloy is formed directly on the layer (3). Since the recording layer (4) crystallizes immediately after film formation, no initialization process is necessary for the optical information recording medium obtained. Examples of the material of the crystallization assisted layer firstly include materials having a face-centered cubic lattice system crystal structure. Examples thereof secondly include tellurium-free materials having a rhombohedral lattice system crystal structure. An especially preferred crystallization assisted layer is a discontinuous island-like film made of a material comprising bismuth and/or a bismuth compound.