Patents by Inventor Keigo TOYODA
Keigo TOYODA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240049379Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: ApplicationFiled: October 20, 2023Publication date: February 8, 2024Applicant: Tokyo Electron LimitedInventors: Yohei YAMAZAWA, Takehisa SAITO, Mayo UDA, Keigo TOYODA, Alok RANJAN, Toshiki NAKAJIMA
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Patent number: 11832373Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: GrantFiled: September 21, 2022Date of Patent: November 28, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Takehisa Saito, Mayo Uda, Keigo Toyoda, Alok Ranjan, Toshiki Nakajima
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Publication number: 20230268216Abstract: A substrate support is arranged in a processing container. The substrate support includes an electrostatic chuck provided with a first support surface for supporting a substrate, provided with a first electrode and a second electrode which are arranged in the electrostatic chuck sequentially from the first support surface, and made of a dielectric material, and a base configured to support the electrostatic chuck. The second electrode is arranged at a position having a distance to the first support surface that is equal to or less than a distance to the base. A voltage for attracting the substrate is applied to the first electrode and bias power is supplied to the second electrode.Type: ApplicationFiled: January 31, 2023Publication date: August 24, 2023Inventors: Shinya ISHIKAWA, Daiki HARIU, Takahiko SATO, Tsutomu NAGAI, Takafumi TSUDA, Keigo TOYODA
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Publication number: 20230021588Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: ApplicationFiled: September 21, 2022Publication date: January 26, 2023Applicant: Tokyo Electron LimitedInventors: Yohei YAMAZAWA, Takehisa Saito, Mayo Uda, Keigo Toyoda, Alok Ranjan, Toshiki Nakajima
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Patent number: 11562889Abstract: A plasma processing apparatus includes a chamber having a sidewall and a plasma processing space surrounded by the sidewall, and a first side gas inlet line and a second side gas inlet line configured to introduce at least one gas from the sidewall into the plasma processing space. The first side gas inlet line includes a plurality of first side gas injectors symmetrically arranged along a circumferential direction on the sidewall and configured to introduce the gas in a first direction into the plasma processing space. Further, the second side gas inlet line includes a plurality of second side gas injectors symmetrically arranged along the circumferential direction on the sidewall and configured to introduce the gas in a second direction different from the first direction into the plasma processing space.Type: GrantFiled: November 27, 2020Date of Patent: January 24, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Mayo Uda, Manabu Tsuruta, Keigo Toyoda
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Patent number: 11470712Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: GrantFiled: September 27, 2018Date of Patent: October 11, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Yohei Yamazawa, Takehisa Saito, Mayo Uda, Keigo Toyoda, Alok Ranjan, Toshiki Nakajima
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Patent number: 11056370Abstract: A method according to an embodiment includes: (a) a first step of etching a workpiece held by a holding structure in a state in which a first direction and a second direction are maintained to form a first angle, by a plasma generated in a processing container; and (a) a second step of, after execution of the first step, etching the workpiece held by the holding structure in a state in which the first direction and the second direction are maintained to form a second angle, by the plasma generated in the processing container.Type: GrantFiled: August 1, 2017Date of Patent: July 6, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Shuhei Ogawa, Keigo Toyoda, Yoshihide Kihara
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Publication number: 20210166918Abstract: A plasma processing apparatus includes a chamber having a sidewall and a plasma processing space surrounded by the sidewall, and a first side gas inlet line and a second side gas inlet line configured to introduce at least one gas from the sidewall into the plasma processing space. The first side gas inlet line includes a plurality of first side gas injectors symmetrically arranged along a circumferential direction on the sidewall and configured to introduce the gas in a first direction into the plasma processing space. Further, the second side gas inlet line includes a plurality of second side gas injectors symmetrically arranged along the circumferential direction on the sidewall and configured to introduce the gas in a second direction different from the first direction into the plasma processing space.Type: ApplicationFiled: November 27, 2020Publication date: June 3, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Mayo UDA, Manabu TSURUTA, Keigo TOYODA
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Publication number: 20190189493Abstract: A method according to an embodiment includes: (a) a first step of etching a workpiece held by a holding structure in a state in which a first direction and a second direction are maintained to form a first angle, by a plasma generated in a processing container; and (a) a second step of, after execution of the first step, etching the workpiece held by the holding structure in a state in which the first direction and the second direction are maintained to form a second angle, by the plasma generated in the processing container.Type: ApplicationFiled: August 1, 2017Publication date: June 20, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Shuhei OGAWA, Keigo TOYODA, Yoshihide KIHARA
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Publication number: 20190098740Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.Type: ApplicationFiled: September 27, 2018Publication date: March 28, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Yohei YAMAZAWA, Takehisa SAITO, Mayo UDA, Keigo TOYODA, Alok RANJAN, Toshiki NAKAJIMA
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Patent number: 10163607Abstract: A method for controlling the temperature of a mounting table in a plasma processing apparatus, includes: calculating a first heat input amount according to high frequency power applied in a given process, wherein the first heat input amount is calculated based on a data table, the data table being generated by measuring temperatures so as to find a first relationship between the high frequency power applied in the plasma processing apparatus and the heat input amount to the mounting table; controlling, based on an operation map, the temperature of at least one of the first heating mechanism and the cooling mechanism so that a first temperature difference between the cooling mechanism and the first heating mechanism is within a controllable range corresponding to the first heat input amount, wherein the temperature of the first heating mechanism is controllable upon the first temperature difference falling within the controllable.Type: GrantFiled: June 7, 2016Date of Patent: December 25, 2018Assignee: Tokyo Electron LimitedInventors: Keigo Toyoda, Hiroshi Tsujimoto
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Patent number: 9818582Abstract: Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.Type: GrantFiled: June 13, 2016Date of Patent: November 14, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Hiraku Murakami, Nobutaka Sasaki, Shigeru Senzaki, Takanori Banse, Hiroshi Tsujimoto, Keigo Toyoda
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Patent number: 9728418Abstract: An etching method for performing a plasma etching on an object to be processed by using a supplied gas is provided. In the etching method, a temperature of a focus ring is adjusted by using a first temperature adjustment mechanism controllable independently of a temperature control of the object to be processed while measuring a time variation until the temperature of the focus ring reaches a target value. A degree of consumption of the focus ring is estimated from the measured time variation based on a preliminarily set correlation between the time variation and the degree of consumption of the focus ring. The target value of the temperature of the focus ring is corrected based on the estimated degree of consumption of the focus ring.Type: GrantFiled: May 21, 2014Date of Patent: August 8, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Keigo Toyoda, Masaru Isago, Hiroshi Tsujimoto
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Publication number: 20160372308Abstract: Disclosed is a plasma processing method. The method includes forming a protective film on an inner wall surface of a processing container of a plasma processing apparatus; and executing a processing on a workpiece within the processing container. When forming the protective film, a protective film forming gas is supplied from an upper side of the space between the mounting table and the side wall of the processing container so that plasma is generated. When executing the processing, a workpiece processing gas is supplied from an upper side of the mounting table so that plasma is generated.Type: ApplicationFiled: June 13, 2016Publication date: December 22, 2016Applicant: TOKYO ELECTRON LIMITEDInventors: Hiraku MURAKAMI, Nobutaka SASAKI, Shigeru SENZAKI, Takanori BANSE, Hiroshi TSUJIMOTO, Keigo TOYODA
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Publication number: 20160365229Abstract: A method for controlling the temperature of a mounting table in a plasma processing apparatus, includes: calculating a first heat input amount according to high frequency power applied in a given process, wherein the first heat input amount is calculated based on a data table, the data table being generated by measuring temperatures so as to find a first relationship between the high frequency power applied in the plasma processing apparatus and the heat input amount to the mounting table; controlling, based on an operation map, the temperature of at least one of the first heating mechanism and the cooling mechanism so that a first temperature difference between the cooling mechanism and the first heating mechanism is within a controllable range corresponding to the first heat input amount, wherein the temperature of the first heating mechanism is controllable upon the first temperature difference falling within the controllable.Type: ApplicationFiled: June 7, 2016Publication date: December 15, 2016Inventors: Keigo TOYODA, Hiroshi TSUJIMOTO
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Publication number: 20160079074Abstract: An etching method for performing a plasma etching on an object to be processed by using a supplied gas is provided. In the etching method, a temperature of a focus ring is adjusted by using a first temperature adjustment mechanism controllable independently of a temperature control of the object to be processed while measuring a time variation until the temperature of the focus ring reaches a target value. A degree of consumption of the focus ring is estimated from the measured time variation based on a preliminarily set correlation between the time variation and the degree of consumption of the focus ring. The target value of the temperature of the focus ring is corrected based on the estimated degree of consumption of the focus ring.Type: ApplicationFiled: May 21, 2014Publication date: March 17, 2016Inventors: Keigo TOYODA, Masaru ISAGO, Hiroshi TSUJIMOTO