Abstract: An all-solid-state battery includes a case, a battery element, and a restraint component. The case accommodates the battery element. The battery element includes an electrode part and a resin part. The resin part covers at least a part of a side face of the electrode part. The restraint component applies a first pressure to the electrode part. The restraint component applies a second pressure to the resin part. The ratio of the second pressure to the first pressure is from 1.5 to 18.

Abstract: Semiconductor devices are provided with encapsulating films for protection of sidewall features during fabrication processes, such as etching to form isolation regions. In a non-volatile flash memory, for example, a trench isolation process is divided into segments to incorporate an encapsulating film along the sidewalls of charge storage material. A pattern is formed over the layer stack followed by etching the charge storage material to form strips elongated in the column direction across the substrate, with a layer of tunnel dielectric material therebetween. Before etching the substrate, an encapsulating film is formed along the sidewalls of the strips of charge storage material. The encapsulating film can protect the sidewalls of the charge storage material during subsequent cleaning, oxidation and etch processes. In another example, the encapsulating film is simultaneously formed while etching to form strips of charge storage material and the isolation trenches.

Abstract: Semiconductor devices are provided with encapsulating films for protection of sidewall features during fabrication processes, such as etching to form isolation regions. In a non-volatile flash memory, for example, a trench isolation process is divided into segments to incorporate an encapsulating film along the sidewalls of charge storage material. A pattern is formed over the layer stack followed by etching the charge storage material to form strips elongated in the column direction across the substrate, with a layer of tunnel dielectric material therebetween. Before etching the substrate, an encapsulating film is formed along the sidewalls of the strips of charge storage material. The encapsulating film can protect the sidewalls of the charge storage material during subsequent cleaning, oxidation and etch processes. In another example, the encapsulating film is simultaneously formed while etching to form strips of charge storage material and the isolation trenches.

Abstract: Semiconductor devices are provided with encapsulating films for protection of sidewall features during fabrication processes, such as etching to form isolation regions. In a non-volatile flash memory, for example, a trench isolation process is divided into segments to incorporate an encapsulating film along the sidewalls of charge storage material. A pattern is formed over the layer stack followed by etching the charge storage material to form strips elongated in the column direction across the substrate, with a layer of tunnel dielectric material therebetween. Before etching the substrate, an encapsulating film is formed along the sidewalls of the strips of charge storage material. The encapsulating film can protect the sidewalls of the charge storage material during subsequent cleaning, oxidation and etch processes. In another example, the encapsulating film is simultaneously formed while etching to form strips of charge storage material and the isolation trenches.

Abstract: In an image processing apparatus, a binary image generating unit generates a binary image from a multi-value image, a ruled line candidate extracting unit extracts ruled line candidate pixels constituting a ruled line from the binary image, an edge detecting unit determines, from the multi-value image, target pixels that are positioned near the ruled line candidate pixels and detects edge information indicative of whether each target pixel constitutes an edge, and a ruled line obtaining unit obtains a ruled line from the multi-value image based on the edge information detected by the edge detecting unit.

Abstract: Semiconductor devices are provided with encapsulating films for protection of sidewall features during fabrication processes, such as etching to form isolation regions. In a non-volatile flash memory, for example, a trench isolation process is divided into segments to incorporate an encapsulating film along the sidewalls of charge storage material. A pattern is formed over the layer stack followed by etching the charge storage material to form strips elongated in the column direction across the substrate, with a layer of tunnel dielectric material therebetween. Before etching the substrate, an encapsulating film is formed along the sidewalls of the strips of charge storage material. The encapsulating film can protect the sidewalls of the charge storage material during subsequent cleaning, oxidation and etch processes. In another example, the encapsulating film is simultaneously formed while etching to form strips of charge storage material and the isolation trenches.

Abstract: In an image processing apparatus, a binary image generating unit generates a binary image from a multi-value image, a ruled line candidate extracting unit extracts ruled line candidate pixels constituting a ruled line from the binary image, an edge detecting unit determines, from the multi-value image, target pixels that are positioned near the ruled line candidate pixels and detects edge information indicative of whether each target pixel constitutes an edge, and a ruled line obtaining unit obtains a ruled line from the multi-value image based on the edge information detected by the edge detecting unit.