Abstract: When a component, that has a connection portion to be connected to an electrode of a board and a weak heat-resistant portion of a lower heat-resisting property than a fusing point of a connection material for connecting the electrode of the board with the connection portion, is connected to the board with interposition of connection material between the electrode of the board and the connection portion, a cooling member is brought into contact with the weak heat-resistant portion or its neighborhood while heating the connection material by heating the board brought in contact with a placement member, and a quantity of heat conducted to the weak heat-resistant portion via the board is reduced by being conducted to the cooling member, thereby performing fusing of the connection material while preventing occurrence of thermal damage to the weak heat-resistant portion.

Abstract: Process for producing a high-density printed wiring board, comprising: providing an ultrathin-copper-foil-clad board having a hole and outermost copper foil thickness of 5 ?m or less, plating the surface by electroless copper plating to form a layer of 0.1 to 1 ?m thickness, forming an electrolytic copper plating layer of 0.5 to 3 ?m thickness using the electroless copper plating layer as electrode, forming a plating resist layer on a portion of the copper plating layer, forming a pattern copper plating layer of 6 to 30 ?m thickness on the copper surface in where the plating resist layer is not formed, by electrolytic plating, removing the plating resist layer, and etching the entire surface to remove the thin electrolytic copper layer, the electroless copper layer and ultrathin copper foil layer at least where the pattern copper plating layer is not formed.

Abstract: When a component that has a connection portion to be connected to the electrode of a board and a weak heat-resistant portion of a lower heat-resisting property than the fusing point of a connection material for connecting the electrode of the board with the connection portion is connected to the board with interposition of the connection material between the electrode of the board and the connection portion, a cooling member is brought in contact with the weak heat-resistant portion or its neighborhood while heating the connection material by heating the board brought in contact with a placement member, and the quantity of heat conducted to the weak heat-resistant portion via the board is reduced by being conducted to the cooling member, carrying out the fusing of the connection material while preventing the occurrence of thermal damage to the weak heat-resistant portion.

Abstract: The purpose of the present invention is supplying a packet tracing system which can trace a route of a packet using existing network components. Packet printing devices 1a, 1b, and 1c generate packet identifying information for each packet which transmits through the communication line and write the packet identifying information to a storage part. An IDS 3 detects suspicious packets in a network under surveillance. A management system which receives a suspicious packet in a network generates a hash value for the suspicious packet and sends a request for examination which contains the hash value to the packet printing devices 1a, 1b and 1c. The packet printing devices 1a, 1b and 1c examine an internal storage part and send a result of examination to the management system 2. The management system 2 obtains a transmission route of the suspicious packet to be traced and by the result of examination and information of network construction.

Abstract: Developing solution for a photoresist comprising an alicyclic amine compound and a non-metallic alkali compound is described. The developing solution exhibits excellent wettability and dissolution selectivity to alicyclic compound-based resists. Also, the developing solution does not produce dissolution residues, and it makes it possible to reliably form ultra fine patterns.

Abstract: A process for the production of a high-density printed wiring board, comprising the steps of

Abstract: Developing solution for a photoresist comprising an alicyclic amine compound and a non-metallic alkali compound is described. The developing solution exhibits excellent wettability and dissolution selectivity to alicyclic compound-based resists. Also, the developing solution does not produce dissolution residues, and it makes it possible to reliably form ultra fine patterns.

Abstract: A removing agent composition for a photoresist comprising 0.01 to 20% by weight of a quaternary ammonium hydroxide, 1 to 80% by weight of a nucleophilic amine having an oxidation-reduction potential, 0.5 to 20% by weight of a sugar and/or a sugar alcohol, and water in the remaining amount; and a process for producing a semiconductor integrated circuit comprising removing a photoresist applied onto an inorganic substrate by using the above removing agent composition.A layer of a photoresist applied onto an inorganic substrate, a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer, or residues of a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer and subsequent ashing of the layer can easily be removed at a low temperature in a short time. The wiring material of the circuit is not corroded at all, and ultra-fine working can be performed.

Abstract: There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gaseous halogenide such as chlorine, hydrogen chloride, dichlorosilane, silicon tetrachloride, phosphorus trichloride, chlorine trifluoride, boron trichloride, boron trifluoride, tungsten hexafluoride, silicon tetrafluoride, fluorine, hydrogen fluoride and hydrogen bromide into contact with a cleaning agent comprising zinc oxide, aluminum oxide and an alkali compound to remove the above halogenide. The above process is extremely effective for promptly and efficiently removing the above gaseous halogenide that is contained in the gas discharged from semiconductor manufacturing process.

Abstract: A removing agent composition for a photoresist is disclosed which comprises 5 to 50% by weight of an alkanolamine, an alkoxyalkylamine or an alkoxyalkanolamine, 1 to 30% by weight of a glycol monoalkyl ether, 0.5 to 15% by weight of a sugar or a sugaralcohol, 0.01 to 10% by weight of a quaternary ammonium hydroxide, if necessary, and water as the balance; and a method of removing by the use of this composition is also disclosed herein.According to the present invention, there can be provided the removing agent composition for the photoresist which can easily remove, at a low temperature in a short time, a photoresist film applied onto an inorganic substrate in a manufacturing process of semiconductor integrated patterns, a remaining photoresist layer after dry etching or a remaining photoresist residue after ashing and which does not corrode a wiring material at all and which can be rinsed with water alone.

Abstract: There is disclosed a process for purification a gaseous organometallic compound containing impurities by bringing the compound into contact with a catalyst comprising a copper or nickel component as the essential ingredient to remove oxygen contained in the compound. The above-mentioned process is capable removal of oxygen in an organometallic compound as low as 0.1 ppm and further to a ultralow concentration of 0.01 ppm, which removal has heretofore been impossible, and thereby the production of a ultrapure organometallic compound has been made possible.

Abstract: There is disclosed a process for cleaning a gas containing a nitrogen fluoride especially nitrogen trifluoride as the harmful component which comprises bringing the gas into contact with a cleaning agent comprising zirconium or a zirconium-based alloy such as Zr-Fe, Zr-Cu, Zr-Ni, Zr-Al, Zr-Mg, Zr-Ca, Zr-Zn, Zr-La and Zr-Ce to remove the harmful component at 100.degree. to 800.degree. C., especially 150.degree. to 500.degree. C. The process is capable of efficiently removing nitrogen fluoride, especially nitrogen trifluoride at a relatively low temperature without generating a harmful byproduct such as nitrogen oxide, and thus exhibits excellent effect on the cleaning of exhaust gas from semiconductor manufacturing process, etc.

Abstract: There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gaseous halogenide such as chlorine, hydrogen chloride, dichlorosilane, silicon tetrachloride, phosphorus trichloride, chlorine trifluoride, boron trichloride, boron trifluoride, tungsten hexafluoride, silicon tetrafluoride, fluorine, hydrogen fluoride and hydrogen bromide into contact with a cleaning agent comprising zinc oxide, aluminum oxide and an alkali compound to remove the above halogenide. The above process is extremely effective for promptly and efficiently removing the above gaseous halogenide that is contained in the gas discharged from semiconductor manufacturing process or leaked suddenly from a gas bomb in an emergency.

Abstract: A method for purifying a gaseous hydride, which comprises bringing a crude gaseous hydride into contact with at least one material selected from copper arsenides, copper phosphides, copper silicides, copper selenides, copper borides or copper sulfides to remove oxygen contained in the crude gaseous hydride.

Abstract: A method for purifying a gaseous hydride, which comprises bringing a crude gaseous hydride into contact with at least one material from nickel arsenides, nickel phosphides, nickel silicides, nickel selenides, or nickel borides to remove oxygen contained in the crude gaseous hydride.