Patents by Inventor Keiichi Kanehori
Keiichi Kanehori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100193362Abstract: In a state where a silicon base material (1) is used as an anode, a fine platinum member (2) is used as a cathode, and an electrolyte solution (4) is arranged between the anode and the cathode, anodic oxidation is performed in constant current mode under the conditions where porous formation mode and electrolytic polishing mode coexist. The platinum member (2) is fitted in the silicon base material (1) with silicon elution, and processes such as hole making, cutting, single-side pressing are performed. Since the silicon base material can be processed at a room temperature with small energy, the crystal quality of the processing surface is not deteriorated. Thus, efficient and highly accurate processing can be performed without using a mechanical method, which consumes much material in conventional processes such as cutting of solar cell silicon base material, and without using laser whose energy unit cost is high, and furthermore, without leaving a crystal damage on a processed surface.Type: ApplicationFiled: May 9, 2008Publication date: August 5, 2010Inventors: Terunori Warabisako, Toshikazu Shimada, Nobuyoshi Koshida, Bernard Gelloz, Keiichi Kanehori
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Patent number: 5932880Abstract: A scintillator device and an image pickup apparatus using the scintillator, in which the scintillator for converting an input particle or electron beam image into an optical image is applied with a voltage between electrodes formed at the input plane of the electron beam and the output plane of scintillation. This voltage generates an electric field in the scintillator so that scattering of a charged particle beam in the scintillator is prevented and the resolution and S/N ratio can be improved while retaining a large amount of scintillation. Accordingly, the shift amount of low energy charged particle beams from the incident axis, which greatly influences degradation of the resolution and S/N ratio, can be suppressed.Type: GrantFiled: May 5, 1997Date of Patent: August 3, 1999Assignee: Hitachi, Ltd.Inventors: Masanari Koguchi, Hiroshi Kakibayashi, Tetsuya Ooshima, Kenji Sameshima, Tatsuo Makishima, Keiichi Kanehori, Hiroyuki Shinada
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Patent number: 5744800Abstract: A transmission electron microscope makes it possible to search for defects without applying an undesirable treatment to a specimen by using a reference specimen prepared separately from a specimen to be observed. A pair of specimen holders detachable from the column of the electron microscope are adjacently arranged at upper and lower stages respectively along an electron beam axis to position the specimens closely to each other in an electron beam illuminating position. The pair of holders can be independently set to or removed from the electron beam illuminating position. The specimen holders include devices for selectively finely adjusting the spacing between the specimens, the angle of the specimen with respect to the electron beam axis and with respect to a plane perpendicular to the electron beam axis.Type: GrantFiled: June 7, 1995Date of Patent: April 28, 1998Assignee: Hitachi, Ltd.Inventors: Hiroshi Kakibayashi, Hisaya Murakoshi, Hidekazu Okuhira, Takashi Irie, Jiro Tokita, Keiichi Kanehori, Yasuhiro Mitsui
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Patent number: 5717207Abstract: A transmission electron microscope has a camera system that is linked to the optical lens system of the electron microscope by linking the number of electron beam scanning lines of the camera system with the zoom function of the optical lens system. Thus, the number of scanning lines increases as the magnification of the transferred image decreases. Further, the specimen under observation is photographed with a constant number of pixels at all times regardless of the magnification of the transferred image by the optical lens system, thus preventing a reduction in the amount of specimen information.Type: GrantFiled: July 22, 1996Date of Patent: February 10, 1998Assignee: Hitachi, Ltd.Inventors: Masanari Koguchi, Hiroshi Kakibayashi, Hiroyuki Tanaka, Shigeto Isakozawa, Keiichi Kanehori, Tatsuo Makishima, Kazutaka Tsuji
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Patent number: 5714757Abstract: A surface analyzing method comprising an ion generation step for generating multiply-charged ions of specific ion species and specific charge state; a deceleration step for decelerating the generated multiply-charged ions to a lower kinetic energy than an energy of threshold of sputtering of an objective material; an irradiation step for irradiating the decelerated multiply-charged ions on the surface of a sample; and an analysis step for analyzing particles or light emitted from the surface of said sample by the irradiation of said multiply-charged ions. Apparatus is provided for carrying out the method.Type: GrantFiled: October 13, 1995Date of Patent: February 3, 1998Assignee: Hitachi, Ltd.Inventors: Naoshi Itabashi, Kozo Mochiji, Hiroyasu Shichi, Seiji Yamamoto, Satoshi Osabe, Keiichi Kanehori
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Patent number: 5343353Abstract: A microminiature, large capacitor for a semiconductor memory is formed from a raw material compound of plural different kinds of metal atoms for deposition, irrespective of the material, temperature and surface condition of a substrate, thereby forming a thin dielectric film having uniform characteristics not affected by the interface even though the film is made as thin as approximately 0.1 .mu.m. The microminiature large capacitance capacitor has a capacitance unaffected by an oxide existing at the interface between a ferroelectric and electrodes without using precious metals such as platinum having the least degree of freedom in deposition of thin films and microminiature processing. The ferroelectric thin film is deposited using an organic metal comprising a plurality of kinds of metal elements in conformity with the composition of a desired dielectric. As electrodes for use in forming a capacitor, a substance exhibiting conductivity after oxidation is preferably employed.Type: GrantFiled: August 17, 1992Date of Patent: August 30, 1994Assignee: Hitachi, Ltd.Inventors: Hiroshi Miki, Yuzuru Ohji, Shinichi Tachi, Keiichi Kanehori
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Patent number: 4645726Abstract: A compact, light-weight all solid state lithium battery is disclosed. The battery provides a good contact between a solid electrolyte and a Li anode by forming a Li alloy layer therebetween, even at the time of discharge at a large current density.Type: GrantFiled: November 21, 1985Date of Patent: February 24, 1987Assignee: Hitachi, Ltd.Inventors: Masahiko Hiratani, Katsuki Miyauchi, Yukio Ito, Keiichi Kanehori, Fumiyoshi Kirino, Tetsuichi Kudo
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Patent number: 4572873Abstract: The present invention relates to a titanium disulfide film fabricated on a substrate, where crystallites of titanium disulfide is oriented at an angle of their c-axis to the substrate surface of not more than 45.degree., and to a process for fabricating the film, where the film is prepared by chemical vapor deposition from TiCl.sub.4 and H.sub.2 S as source gases under an inner pressure of reaction tube of 30 kPa or less.Type: GrantFiled: February 19, 1985Date of Patent: February 25, 1986Assignee: Hitachi, Ltd.Inventors: Keiichi Kanehori, Katsuki Miyauchi, Tetsuichi Kudo
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Patent number: 4555456Abstract: A cathode structure for a thin film battery in which a titanium oxide layer is disposed on a substrate and has a titanium disulfide thin film disposed thereon. The cathode structure exhibits an excellent performance when applied to a lithium battery, a sodium battery, etc.Type: GrantFiled: May 22, 1984Date of Patent: November 26, 1985Assignee: Hitachi, Ltd.Inventors: Keiichi Kanehori, Katsuki Miyauchi, Yukio Ito, Fumiyoshi Kirino, Tetsuichi Kudo
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Patent number: 4474686Abstract: The invention relates to a lithium oxide-based amorphous ionic conductor which is a ternary composition consisting of Li.sub.2 O, SiO.sub.2 and ZrO.sub.2, said composition having a composition of components falling within the range of a quadrilateral defined by two lines corresponding to the Li.sub.2 O contents of 80% and 50%, respectively, and by two lines which pass the apex of Li.sub.2 O and on which a ratio SiO.sub.2 :ZrO.sub.2 is 100:0.5 and 1:9, respectively. The conductor is used as a solid electrolyte in the form of a high ionic conductive amorphous thin film.Type: GrantFiled: September 26, 1983Date of Patent: October 2, 1984Assignee: Hitachi, Ltd.Inventors: Katsuki Miyauchi, Keiichi Kanehori, Tetsuichi Kudo
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Patent number: 4277452Abstract: The present disclosure is directed to a carbon monoxide absorbing liquid containing a cuprous ion, hydrochloric acid and titanum trichloride.Titanium trichloride is effective in increasing the carbon monoxide absorption quantity. Furthermore, titanium trichloride remarkably increases the oxygen resistance. Therefore, this absorbing liquid can be used continuously and for a long time.Type: GrantFiled: January 8, 1980Date of Patent: July 7, 1981Assignees: Hitachi, Ltd., Babcock-Hitachi Kabushiki KaishaInventors: Keiichi Kanehori, Shinkichi Horigome, Masayuki Katsumoto, Yoshijiro Arikawa
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Patent number: 4174373Abstract: A catalyst comprising carbonaceous materials such as activated carbon, etc. impregnated with bromine, iodine, chlorine or their compounds, is impregnated with a promoter containing a specific metal, and brought in contact with a flue gas in the presence of ammonia, whereby nitrogen oxides and sulfur oxides contained in the flue gas are removed with a very high percent removal. The removal can be carried out at a temperature much lower than that of the conventional process.Type: GrantFiled: August 29, 1975Date of Patent: November 13, 1979Assignee: Hitachi, Ltd.Inventors: Kazuetsu Yoshida, Michiharu Seki, Keiichi Kanehori, Katsuhiro Kaneko, Yo Sakurai