Patents by Inventor Keiichi Kanehori

Keiichi Kanehori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100193362
    Abstract: In a state where a silicon base material (1) is used as an anode, a fine platinum member (2) is used as a cathode, and an electrolyte solution (4) is arranged between the anode and the cathode, anodic oxidation is performed in constant current mode under the conditions where porous formation mode and electrolytic polishing mode coexist. The platinum member (2) is fitted in the silicon base material (1) with silicon elution, and processes such as hole making, cutting, single-side pressing are performed. Since the silicon base material can be processed at a room temperature with small energy, the crystal quality of the processing surface is not deteriorated. Thus, efficient and highly accurate processing can be performed without using a mechanical method, which consumes much material in conventional processes such as cutting of solar cell silicon base material, and without using laser whose energy unit cost is high, and furthermore, without leaving a crystal damage on a processed surface.
    Type: Application
    Filed: May 9, 2008
    Publication date: August 5, 2010
    Inventors: Terunori Warabisako, Toshikazu Shimada, Nobuyoshi Koshida, Bernard Gelloz, Keiichi Kanehori
  • Patent number: 5932880
    Abstract: A scintillator device and an image pickup apparatus using the scintillator, in which the scintillator for converting an input particle or electron beam image into an optical image is applied with a voltage between electrodes formed at the input plane of the electron beam and the output plane of scintillation. This voltage generates an electric field in the scintillator so that scattering of a charged particle beam in the scintillator is prevented and the resolution and S/N ratio can be improved while retaining a large amount of scintillation. Accordingly, the shift amount of low energy charged particle beams from the incident axis, which greatly influences degradation of the resolution and S/N ratio, can be suppressed.
    Type: Grant
    Filed: May 5, 1997
    Date of Patent: August 3, 1999
    Assignee: Hitachi, Ltd.
    Inventors: Masanari Koguchi, Hiroshi Kakibayashi, Tetsuya Ooshima, Kenji Sameshima, Tatsuo Makishima, Keiichi Kanehori, Hiroyuki Shinada
  • Patent number: 5744800
    Abstract: A transmission electron microscope makes it possible to search for defects without applying an undesirable treatment to a specimen by using a reference specimen prepared separately from a specimen to be observed. A pair of specimen holders detachable from the column of the electron microscope are adjacently arranged at upper and lower stages respectively along an electron beam axis to position the specimens closely to each other in an electron beam illuminating position. The pair of holders can be independently set to or removed from the electron beam illuminating position. The specimen holders include devices for selectively finely adjusting the spacing between the specimens, the angle of the specimen with respect to the electron beam axis and with respect to a plane perpendicular to the electron beam axis.
    Type: Grant
    Filed: June 7, 1995
    Date of Patent: April 28, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Kakibayashi, Hisaya Murakoshi, Hidekazu Okuhira, Takashi Irie, Jiro Tokita, Keiichi Kanehori, Yasuhiro Mitsui
  • Patent number: 5717207
    Abstract: A transmission electron microscope has a camera system that is linked to the optical lens system of the electron microscope by linking the number of electron beam scanning lines of the camera system with the zoom function of the optical lens system. Thus, the number of scanning lines increases as the magnification of the transferred image decreases. Further, the specimen under observation is photographed with a constant number of pixels at all times regardless of the magnification of the transferred image by the optical lens system, thus preventing a reduction in the amount of specimen information.
    Type: Grant
    Filed: July 22, 1996
    Date of Patent: February 10, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Masanari Koguchi, Hiroshi Kakibayashi, Hiroyuki Tanaka, Shigeto Isakozawa, Keiichi Kanehori, Tatsuo Makishima, Kazutaka Tsuji
  • Patent number: 5714757
    Abstract: A surface analyzing method comprising an ion generation step for generating multiply-charged ions of specific ion species and specific charge state; a deceleration step for decelerating the generated multiply-charged ions to a lower kinetic energy than an energy of threshold of sputtering of an objective material; an irradiation step for irradiating the decelerated multiply-charged ions on the surface of a sample; and an analysis step for analyzing particles or light emitted from the surface of said sample by the irradiation of said multiply-charged ions. Apparatus is provided for carrying out the method.
    Type: Grant
    Filed: October 13, 1995
    Date of Patent: February 3, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Naoshi Itabashi, Kozo Mochiji, Hiroyasu Shichi, Seiji Yamamoto, Satoshi Osabe, Keiichi Kanehori
  • Patent number: 5343353
    Abstract: A microminiature, large capacitor for a semiconductor memory is formed from a raw material compound of plural different kinds of metal atoms for deposition, irrespective of the material, temperature and surface condition of a substrate, thereby forming a thin dielectric film having uniform characteristics not affected by the interface even though the film is made as thin as approximately 0.1 .mu.m. The microminiature large capacitance capacitor has a capacitance unaffected by an oxide existing at the interface between a ferroelectric and electrodes without using precious metals such as platinum having the least degree of freedom in deposition of thin films and microminiature processing. The ferroelectric thin film is deposited using an organic metal comprising a plurality of kinds of metal elements in conformity with the composition of a desired dielectric. As electrodes for use in forming a capacitor, a substance exhibiting conductivity after oxidation is preferably employed.
    Type: Grant
    Filed: August 17, 1992
    Date of Patent: August 30, 1994
    Assignee: Hitachi, Ltd.
    Inventors: Hiroshi Miki, Yuzuru Ohji, Shinichi Tachi, Keiichi Kanehori
  • Patent number: 4645726
    Abstract: A compact, light-weight all solid state lithium battery is disclosed. The battery provides a good contact between a solid electrolyte and a Li anode by forming a Li alloy layer therebetween, even at the time of discharge at a large current density.
    Type: Grant
    Filed: November 21, 1985
    Date of Patent: February 24, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Masahiko Hiratani, Katsuki Miyauchi, Yukio Ito, Keiichi Kanehori, Fumiyoshi Kirino, Tetsuichi Kudo
  • Patent number: 4572873
    Abstract: The present invention relates to a titanium disulfide film fabricated on a substrate, where crystallites of titanium disulfide is oriented at an angle of their c-axis to the substrate surface of not more than 45.degree., and to a process for fabricating the film, where the film is prepared by chemical vapor deposition from TiCl.sub.4 and H.sub.2 S as source gases under an inner pressure of reaction tube of 30 kPa or less.
    Type: Grant
    Filed: February 19, 1985
    Date of Patent: February 25, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Keiichi Kanehori, Katsuki Miyauchi, Tetsuichi Kudo
  • Patent number: 4555456
    Abstract: A cathode structure for a thin film battery in which a titanium oxide layer is disposed on a substrate and has a titanium disulfide thin film disposed thereon. The cathode structure exhibits an excellent performance when applied to a lithium battery, a sodium battery, etc.
    Type: Grant
    Filed: May 22, 1984
    Date of Patent: November 26, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Keiichi Kanehori, Katsuki Miyauchi, Yukio Ito, Fumiyoshi Kirino, Tetsuichi Kudo
  • Patent number: 4474686
    Abstract: The invention relates to a lithium oxide-based amorphous ionic conductor which is a ternary composition consisting of Li.sub.2 O, SiO.sub.2 and ZrO.sub.2, said composition having a composition of components falling within the range of a quadrilateral defined by two lines corresponding to the Li.sub.2 O contents of 80% and 50%, respectively, and by two lines which pass the apex of Li.sub.2 O and on which a ratio SiO.sub.2 :ZrO.sub.2 is 100:0.5 and 1:9, respectively. The conductor is used as a solid electrolyte in the form of a high ionic conductive amorphous thin film.
    Type: Grant
    Filed: September 26, 1983
    Date of Patent: October 2, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Katsuki Miyauchi, Keiichi Kanehori, Tetsuichi Kudo
  • Patent number: 4277452
    Abstract: The present disclosure is directed to a carbon monoxide absorbing liquid containing a cuprous ion, hydrochloric acid and titanum trichloride.Titanium trichloride is effective in increasing the carbon monoxide absorption quantity. Furthermore, titanium trichloride remarkably increases the oxygen resistance. Therefore, this absorbing liquid can be used continuously and for a long time.
    Type: Grant
    Filed: January 8, 1980
    Date of Patent: July 7, 1981
    Assignees: Hitachi, Ltd., Babcock-Hitachi Kabushiki Kaisha
    Inventors: Keiichi Kanehori, Shinkichi Horigome, Masayuki Katsumoto, Yoshijiro Arikawa
  • Patent number: 4174373
    Abstract: A catalyst comprising carbonaceous materials such as activated carbon, etc. impregnated with bromine, iodine, chlorine or their compounds, is impregnated with a promoter containing a specific metal, and brought in contact with a flue gas in the presence of ammonia, whereby nitrogen oxides and sulfur oxides contained in the flue gas are removed with a very high percent removal. The removal can be carried out at a temperature much lower than that of the conventional process.
    Type: Grant
    Filed: August 29, 1975
    Date of Patent: November 13, 1979
    Assignee: Hitachi, Ltd.
    Inventors: Kazuetsu Yoshida, Michiharu Seki, Keiichi Kanehori, Katsuhiro Kaneko, Yo Sakurai