Abstract: The substrate processing apparatus includes a processing chamber including an outer chamber configured to hold a processing liquid and an inner chamber capable of surrounding the substrate held by the substrate holder; a liquid delivery pipe having one end coupled to a bottom of the inner chamber and other end coupled to the outer chamber; a pump configured to suck the processing liquid from the inner chamber through the liquid delivery pipe and to deliver the processing liquid to the outer chamber through the liquid delivery pipe; and a guide cover having a through-hole in which the substrate holder can be inserted. The guide cover is located below an upper end of the outer chamber and above the inner chamber.

Abstract: To prevent a tin alloy from coming into contact with a copper wiring layer when a tin alloy bump layer is reflowed. According to an aspect of the present invention, a method of manufacturing a substrate having a bump at a resist opening is provided. The method of manufacturing a substrate includes a step of forming a copper wiring layer on the substrate by plating at a first temperature, a step of forming a barrier layer on the copper wiring layer by plating at a second temperature that is approximately equal to the first temperature, and a step of forming a tin alloy bump layer on the barrier layer by plating.

Abstract: The substrate processing apparatus includes a processing chamber including an outer chamber configured to hold a processing liquid and an inner chamber capable of surrounding the substrate held by the substrate holder; a liquid delivery pipe having one end coupled to a bottom of the inner chamber and other end coupled to the outer chamber; a pump configured to suck the processing liquid from the inner chamber through the liquid delivery pipe and to deliver the processing liquid to the outer chamber through the liquid delivery pipe; and a guide cover having a through-hole in which the substrate holder can be inserted. The guide cover is located below an upper end of the outer chamber and above the inner chamber.

Abstract: The substrate processing apparatus includes a processing chamber including an outer chamber configured to hold a processing liquid and an inner chamber capable of surrounding the substrate held by the substrate holder; a liquid delivery pipe having one end coupled to a bottom of the inner chamber and other end coupled to the outer chamber; a pump configured to suck the processing liquid from the inner chamber through the liquid delivery pipe and to deliver the processing liquid to the outer chamber through the liquid delivery pipe; and a guide cover having a through-hole in which the substrate holder can be inserted. The guide cover is located below an upper end of the outer chamber and above the inner chamber.

Abstract: The substrate processing apparatus includes a processing chamber including an outer chamber configured to hold a processing liquid and an inner chamber capable of surrounding the substrate held by the substrate holder; a liquid delivery pipe having one end coupled to a bottom of the inner chamber and other end coupled to the outer chamber; a pump configured to suck the processing liquid from the inner chamber through the liquid delivery pipe and to deliver the processing liquid to the outer chamber through the liquid delivery pipe; and a guide cover having a through-hole in which the substrate holder can be inserted. The guide cover is located below an upper end of the outer chamber and above the inner chamber.

Abstract: A substrate processing apparatus comprises a transferring device including a grasping section configured to grasp a substrate holder, and a transferring section configured to transfer the substrate holder grasped by the grasping section, and a processing bath for storing a substrate held by the substrate holder so that a surface of the substrate is vertically oriented, and processing the substrate. The grasping section is configured to grasp the substrate holder with a surface of the substrate oriented horizontally. The transferring section is configured to transfer the substrate holder above the processing bath, with the surface of the substrate oriented horizontally.

Abstract: A substrate processing apparatus according to the present invention comprises a transferring device including a grasping section configured to grasp a substrate holder, and a transferring section configured to transfer the substrate holder grasped by the grasping section, and a processing bath for storing a substrate held by the substrate holder so that a surface of the substrate is vertically oriented, and processing the substrate. The grasping section is configured to grasp the substrate holder with a surface of the substrate oriented horizontally. The transferring section is configured to transfer the substrate holder above the processing bath, with the surface of the substrate oriented horizontally.

Abstract: A substrate processing apparatus is described herein. The substrate processing apparatus comprises a transferring device including: a grasping section configured to grasp a substrate holder, a transferring section configured to transfer the substrate holder grasped by the grasping section, and a processing bath for storing a substrate held by the substrate holder so that a surface of the substrate is vertically oriented. The grasping section is configured to grasp the substrate holder with a surface of the substrate oriented horizontally. The transferring section is configured to transfer the substrate holder above the processing bath, with the surface of the substrate oriented horizontally.

Abstract: An etching liquid which can selectively remove only a copper layer in an etching process of a multilayer structure including a cobalt layer and the copper layer is disclosed. The etching liquid is an etching liquid for etching the copper layer in the multilayer structure including the copper layer and the cobalt layer. This etching liquid includes at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid, and hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.

Abstract: A substrate processing apparatus includes a plurality of inlet pipes and a plurality of outlet pipes, connected to a processing tank and configured to be switched therebetween to create a flow of a processing liquid in the processing tank in a direction different from that of the processing liquid before the switching. The inlet pipes and the outlet pipes are each provided with a flow control device which is controlled by a control section so that upon the switching, a flow rate of the processing liquid flowing therethrough changes with time.

Abstract: The substrate processing apparatus includes a processing chamber including an outer chamber configured to hold a processing liquid and an inner chamber capable of surrounding the substrate held by the substrate holder; a liquid delivery pipe having one end coupled to a bottom of the inner chamber and other end coupled to the outer chamber; a pump configured to suck the processing liquid from the inner chamber through the liquid delivery pipe and to deliver the processing liquid to the outer chamber through the liquid delivery pipe; and a guide cover having a through-hole in which the substrate holder can be inserted. The guide cover is located below an upper end of the outer chamber and above the inner chamber.

Abstract: An etching liquid which can selectively remove only a copper layer in an etching process of a multilayer structure including a cobalt layer and the copper layer is disclosed. The etching liquid is an etching liquid for etching the copper layer in the multilayer structure including the copper layer and the cobalt layer. This etching liquid includes at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid, and hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.

Abstract: A substrate processing apparatus according to the present invention comprises a transferring device including a grasping section configured to grasp a substrate holder, and a transferring section configured to transfer the substrate holder grasped by the grasping section, and a processing bath for storing a substrate held by the substrate holder so that a surface of the substrate is vertically oriented, and processing the substrate. The grasping section is configured to grasp the substrate holder with a surface of the substrate oriented horizontally. The transferring section is configured to transfer the substrate holder above the processing bath, with the surface of the substrate oriented horizontally.

Abstract: A substrate processing apparatus capable of inhibiting diffusion of a chemical solution atmosphere around a processing bath. The substrate processing apparatus has a processing bath for storing a substrate holder holding a substrate and for processing the substrate, a lifter configured to support the substrate holder, store the substrate holder in the processing bath, and take out the substrate holder from the processing bath, and a cover configured to cover the periphery of the substrate holder taken out from the processing bath by the lifter.

Abstract: An etching Liquid which can selectively remove only a copper layer in an etching process of a multilayer structure including a cobalt layer and the copper layer is disclosed. The etching liquid is an etching liquid for etching the copper layer in the multilayer structure including the copper layer and the cobalt layer. This etching liquid includes at least one acid selected from a group consisting of citric acid, oxalic acid, malic acid, and malonic acid, and hydrogen peroxide, the etching liquid having pH in a range of 4.3 to 5.5.

Abstract: A substrate processing apparatus can arbitrarily switch the flow direction of a processing liquid without causing a change in the overall flow rate of the processing liquid nor creating a non-uniform flow of the processing liquid. The substrate processing apparatus includes a plurality of inlet pipes and a plurality of outlet pipes, connected to a processing tank and to be switched therebetween to create a flow of a processing liquid in the processing tank in a direction different from that of the processing liquid before the switching. The inlet pipes and the outlet pipes are each provided with a flow control device which is controlled by a control section so that upon switching between the pipes, the flow rate of the processing liquid flowing therethrough changes with time.

Abstract: An electroplating apparatus can form a plated film having a more uniform thickness and good film quality over an entire surface of a substrate having a conductive layer (seed layer) whose resistivity is equal to or higher than that of copper.

Abstract: A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.

Abstract: A plating apparatus can form a plated film having a more uniform thickness over an entire surface of a substrate and can securely fill interconnect recesses with the metal without forming voids in the embedded metal even when the substrate has a high sheet resistance in the surface. The plating apparatus includes a substrate holder for holding a substrate, a cathode portion including a cathode for contact with the substrate held by the substrate holder to feed electricity to the substrate, and an anode, partly or wholly having a high resistance, disposed opposite a surface of the substrate held by the substrate holder, wherein plating of the surface of the substrate is carried out while filling between the anode and the substrate held by the substrate holder with a plating solution.

Abstract: A plating apparatus securely carries out a flattening plating of a substrate to form a plated film having a flat surface without using a costly mechanism, and without applying an extra plating to the substrate. The plating apparatus includes a substrate holder; a cathode section having a seal member for watertightly sealing a peripheral portion of the substrate, and a cathode electrode for supplying an electric current to the substrate; an anode disposed in a position facing the surface of the substrate; a porous member disposed between the anode and the surface of the substrate; a constant-voltage control section for controlling a voltage applied between the cathode electrode and the anode at a constant value; and a current monitor section for monitoring an electric current flowing between the cathode electrode and the anode, and feeding back a detection signal to the constant-voltage control section.