Abstract: A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of one type, that one type being, the bias lines, the signal lines, and the gate lines, wherein at least a part of the connection

Abstract: Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.

Abstract: A radiation detecting apparatus according to the present invention includes: pixels including switching elements arranged on an insulating substrate and conversion elements arranged on the switching elements to convert a radiation into electric carriers, the switching elements and the conversion elements are connected with each other, the pixels two-dimensionally arranged on the insulating substrate in a matrix; gate wiring commonly connected with a plurality of switching elements arranged in a row direction on the insulating substrate; signal wiring commonly connected with a plurality of switching elements arranged in a column direction; and a plurality of insulating films arranged between the switching elements and the conversion elements, wherein at least one of the gate wiring and the signal wiring is arranged to be put between the plurality of insulating films.

Abstract: A conversion apparatus includes pixels including switching elements provided on an insulating substrate and conversion elements disposed over the switching elements and connected to the switching elements. Conductive lines are coupled to the pixels and have terminal elements for providing a connection to an external circuit. The terminal elements are disposed in a metal layer that is formed over the conversion elements. The conversion apparatus further includes a transparent conductive layer covering surfaces of the terminal elements, and a protective layer covering edges of the terminal elements and having openings.

Abstract: In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.

Abstract: In a radiation image pickup device including: a sensor element for converting radiation into an electrical signal; and a thin film transistor connected to the sensor element, an electrode of the sensor element connected to the thin film transistor is disposed above the thin film transistor, and that the thin film transistor has a top gate type structure in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are laminated in this order on a substrate, so that a channel portion of the thin film transistor is protected by a gate electrode, thereby providing stable TFT characteristics without undesirable turning ON any of the TFT elements due to the back gate effect by the fluctuation in electric potentials corresponding to outputs from the sensor electrodes, and thereby greatly improving image quality.

Abstract: In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.

Abstract: A reset method of a conversion element is improved, and the simplification of wiring and the improvement of an open area ratio of the conversion element by means of an image pickup apparatus including a plurality of pixels arranged on an insulating substrate, each of the pixels including a conversion element, a first switching element connected to the conversion element in order to transfer an electric signal obtained by the conversion element, and a second switching element connected to the conversion element in order to reset the conversion element by giving constant potential to the conversion element, wherein the second switching element includes a gate electrode, and a source electrode or a drain electrode, and one of the source electrode and the drain electrode is electrically connected to the gate electrode.

Abstract: The invention is to provide a radiation detection apparatus adapted for taking a moving image. The radiation detection apparatus has a pixel including a phosphor for converting radiation into light, a photoelectric conversion unit for converting the light converted in the phosphor into an electrical signal, a thin film transistor (TFT 1) for transferring the electrical signal converted in the photoelectric conversion unit, a capacitance for accumulating the electrical signal transferred by the thin film transistor (TFT 1), and a thin film transistor (TFT 2) for reading the electrical signal accumulated in the capacitance. The photoelectric conversion unit, the thin film transistor (TFT 1), the capacitance and the thin film transistor (TFT 2) are formed by a same layer configuration, and is each formed at least by a lower electrode or a gate electrode, a gate insulation film and a semiconductor layer and separated by a protective layer from the phosphor.

Abstract: An information-processing apparatus comprises an acquisition unit configured to acquire information about a communication-method type from a display device connected to the information-processing apparatus, a determination unit configured to determine whether or not the display device is adapted to receive data on digital contents by using a predetermined copyright-protection technology based on the communication-method-type information, a conversion unit configured to convert an image quality of the digital contents based on the determination result, and an output unit configured to transmit the converted digital contents to the display device.

Abstract: In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.

Abstract: To improve a sensor resetting method and thereby implement a high rate at which a moving image is read, the invention provides an image pickup apparatus and a radiation image pickup apparatus including: a plurality of pixels arranged on a substrate in row and column directions, each pixel having a conversion element and a transfer switching element; a drive wiring connected to a plurality of the transfer switching elements in the row direction; and a conversion element wiring connected to a plurality of the conversion elements in the row direction, wherein a reset switching element is disposed between the conversion element wiring and a reset wiring for supplying a reset voltage for resetting the conversion element, and a bias switching element is disposed between the conversion element wiring and a bias wiring for supplying a bias voltage for operating the conversion element.

Abstract: A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements, characterized in that the photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and is characterized in that the radiation conversion layer is formed above one or more switching elements, and a shielding electrode layer is disposed between the switching elements and the radiation conversion layer.

Abstract: The invention is to provide a radiation detection apparatus adapted for taking a moving image. The radiation detection apparatus has a pixel including a phosphor for converting radiation into light, a photoelectric conversion unit for converting the light converted in the phosphor into an electrical signal, a thin film transistor (TFT 1) for transferring the electrical signal converted in the photoelectric conversion unit, a capacitance for accumulating the electrical signal transferred by the thin film transistor (TFT 1), and a thin film transistor (TFT 2) for reading the electrical signal accumulated in the capacitance. The photoelectric conversion unit, the thin film transistor (TFT 1), the capacitance and the thin film transistor (TFT 2) are formed by a same layer configuration, and is each formed at least by a lower electrode or a gate electrode, a gate insulation film and a semiconductor layer and separated by a protective layer from the phosphor.

Abstract: A radiographic imaging apparatus, comprising: a photoelectric conversion substrate including a pixel area where there are arranged a plurality of pixels each formed of a photoelectric conversion element and a switching element connected to the photoelectric conversion element in a matrix formed on an insulating substrate, a bias line for applying a bias to the photoelectric conversion element, a gate line for supplying a driving signal to the switching element, and a signal line for reading electric charges converted in the photoelectric conversion element; a wavelength conversion element for converting radiation to light that can be detected by the photoelectric conversion element, the wavelength conversion element being disposed according to a region including the pixel area; and connection wiring having a photoelectric conversion layer connected to at least a plurality of lines of one type, that one type being, the bias lines, the signal lines, and the gate lines, wherein at least a part of the connection

Abstract: In an image pick-up apparatus, a plurality of pixels, each pairing a semiconductor conversion element for converting an incident electromagnetic wave to an electric signal and a thin film transistor connected to the semiconductor conversion element, is arranged in a two-dimensional state on a substrate. The image pick-up apparatus includes gate wiring to which gate electrodes of thin film transistors of a plurality of pixels arranged in one direction are commonly connected, and signal wiring to which source electrodes or drain electrodes of thin film transistors of a plurality of pixels arranged in a direction different from the one direction are commonly connected on the substrate. Protection layers are arranged on the thin film transistors, the gate wiring and the signal wiring. The protection layers formed at least at the same time. Then, the protection layers are removed in at least a part or all of regions in which the semiconductor conversion elements are formed.

Abstract: The invention is to provide a radiation detection apparatus adapted for taking a moving image. The radiation detection apparatus has a pixel including a phosphor for converting radiation into light, a photoelectric conversion unit for converting the light converted in the phosphor into an electrical signal, a thin film transistor (TFT 1) for transferring the electrical signal converted in the photoelectric conversion unit, a capacitance for accumulating the electrical signal transferred by the thin film transistor (TFT 1), and a thin film transistor (TFT 2) for reading the electrical signal accumulated in the capacitance. The photoelectric conversion unit, the thin film transistor (TFT 1), the capacitance and the thin film transistor (TFT 2) are formed by a same layer configuration, and is each formed at least by a lower electrode or a gate electrode, a gate insulation film and a semiconductor layer and separated by a protective layer from the phosphor.

Abstract: The antenna main body having the conductor wound around thereon and the radio wave receiving parts for receiving the radio waves are formed independently, the area of the radio wave receiving region of the radio wave receiving parts is formed to be larger than a cross sectional area of the antenna main body in the direction orthogonal to the winding direction of the conductor, and the radio wave receiving parts are arranged so as to be in contact with the antenna main body at the ends in the winding direction of the conductor.

Abstract: A time information transmission-reception integrated circuit includes: a reception control circuit for detecting a signal obtained by receiving and amplifying an external radio wave, and generating a clock data signal, based on a carrier signal the phase of which is synchronized with the signal; and a transmission control circuit for generating an amplitude modulation signal obtained by modulating the amplitude of the carrier signal by the transmission time code, by a modulator, and transmitting a relaying radio wave from an antenna, the phase of the relaying radio wave synchronized with the phase of the external radio wave, by correcting the phase shift of the amplitude modulation signal by a phase shifter. Thereby, the phase shift between the external radio wave and the relaying radio wave is cancelled.

Abstract: The antenna main body having the conductor wound around thereon and the radio wave receiving parts for receiving the radio waves are formed independently, the area of the radio wave receiving region of the radio wave receiving parts is formed to be larger than a cross sectional area of the antenna main body in the direction orthogonal to the winding direction of the conductor, and the radio wave receiving parts are arranged so as to be in contact with the antenna main body at the ends in the winding direction of the conductor.