Patents by Inventor Keiichi Umeda

Keiichi Umeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10475984
    Abstract: A germanium-containing aluminum nitride piezoelectric film and a method for manufacturing an aluminum nitride piezoelectric film in which a germanium-containing aluminum nitride piezoelectric film is grown on a substrate by sputtering.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: November 12, 2019
    Assignees: MURATA MANUFACTURING CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Keiichi Umeda, Morito Akiyama, Toshimi Nagase, Keiko Nishikubo, Atsushi Honda
  • Patent number: 10397708
    Abstract: A piezoelectric element includes a first piezoelectric layer which has a first polarization axis direction in a thickness direction of the first piezoelectric layer and is made of AlN. A second piezoelectric layer made of GeAlN which is deposited on the first piezoelectric layer and has a second polarization axis direction opposite to the first polarization axis direction. A first electrode is provided on a side of the first piezoelectric layer which is opposite from a side where the second piezoelectric layer is disposed. A second electrode provided on a side of the second piezoelectric layer which is opposite from a side where the first piezoelectric layer is disposed.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: August 27, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Keiichi Umeda, Takaaki Mizuno
  • Publication number: 20190245133
    Abstract: A piezoelectric device that includes: a diaphragm; a supporting part configured to support at least a portion of an end of the diaphragm; a piezoelectric film disposed along a portion supported by the supporting part on the diaphragm, a width of the film along the supported portion being narrower than a width of the portion; a lower electrode disposed at a face of the piezoelectric film on a diaphragm side; and an upper electrode disposed on a face of the piezoelectric film on an opposite side to the diaphragm.
    Type: Application
    Filed: April 16, 2019
    Publication date: August 8, 2019
    Inventors: Keiichi Umeda, Toshio Imanishi, Ville Kaajakari
  • Patent number: 10374569
    Abstract: A resonance device that includes a lower cover formed from non-degenerate silicon; a resonator having a degenerate silicon substrate with a lower surface facing the lower cover, and including first and second electrode layers laminated on the substrate with a piezoelectric film formed therebetween and having a surface opposing an upper surface of the substrate. Moreover, the lower surface of the substrate has an adjustment region where a depth or height of projections and recesses formed on the surface is larger than that in another region of the lower surface of the substrate or is a region where an area of the projections and recesses is larger than that in the other region of the lower surface of the substrate.
    Type: Grant
    Filed: March 30, 2018
    Date of Patent: August 6, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Keiichi Umeda, Takehiko Kishi, Hiroshi Yamada, Masakazu Fukumitsu
  • Publication number: 20190238996
    Abstract: A piezoelectric element includes a first piezoelectric layer which has a first polarization axis direction in a thickness direction of the first piezoelectric layer and is made of AlN. A second piezoelectric layer made of GeAIN which is deposited on the first piezoelectric layer and has a second polarization axis direction opposite to the first polarization axis direction. A first electrode is provided on a side of the first piezoelectric layer which is opposite from a side where the second piezoelectric layer is disposed. A second electrode provided on a side of the second piezoelectric layer which is opposite from a side where the first piezoelectric layer is disposed.
    Type: Application
    Filed: April 8, 2019
    Publication date: August 1, 2019
    Inventors: Keiichi UMEDA, Takaaki MIZUNO
  • Patent number: 10312427
    Abstract: A piezoelectric device that includes: a diaphragm; a supporting part configured to support at least a portion of an end of the diaphragm; a piezoelectric film disposed along a portion supported by the supporting part on the diaphragm, a width of the film along the supported portion being narrower than a width of the portion; a lower electrode disposed at a face of the piezoelectric film on a diaphragm side; and an upper electrode disposed on a face of the piezoelectric film on an opposite side to the diaphragm.
    Type: Grant
    Filed: June 6, 2016
    Date of Patent: June 4, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Keiichi Umeda, Toshio Imanishi, Ville Kaajakari
  • Patent number: 10291202
    Abstract: A vibration device that includes a support member, vibration arms connected to the support member and each having an n-type Si layer which is a degenerate semiconductor, and electrodes provided so as to excite the vibration arms, and silicon oxide films containing impurities in contact with a respective lower surface of the n-type Si layers of each vibration arm.
    Type: Grant
    Filed: March 17, 2016
    Date of Patent: May 14, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hiroshi Yamada, Keiichi Umeda, Takehiko Kishi, Toshio Nishimura
  • Patent number: 10224896
    Abstract: A piezoelectric vibrator that includes first and second vibration portions that vibrate with mutually reverse phases. Each of the vibration portions includes a silicon layer, a first piezoelectric layer and a second piezoelectric layer that has polarization in an opposite direction to a direction of polarization of the first piezoelectric layer. First and second electrodes are disposed on opposite sides of the second piezoelectric layer. The piezoelectric vibrator has a structure such that a first potential is applied to the first electrode of the first vibration portion and the second electrode of the second vibration portion, and a second potential is applied to the second electrode of the first vibration portion and the first electrode of the second vibration portion.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: March 5, 2019
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Toshio Nishimura, Keiichi Umeda, Ville Kaajakari
  • Publication number: 20190007026
    Abstract: A gallium nitride structure that includes: a substrate; a gallium nitride layer opposed to the substrate and containing gallium nitride as a main component thereof; and a first electrode between the gallium nitride layer and the substrate. The first electrode includes at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer is in contact with the gallium nitride layer.
    Type: Application
    Filed: September 10, 2018
    Publication date: January 3, 2019
    Inventors: Keiichi Umeda, Takaaki Mizuno, Yasuhiro Aida, Masato Uehara, Toshimi Nagase, Morito Akiyama
  • Patent number: 10069473
    Abstract: A piezoelectric resonator that includes a single crystal Si layer, a piezoelectric thin film formed from aluminum nitride and provided on the single crystal Si layer, and first and second electrodes provided so as to sandwich the piezoelectric thin film. An element excluding nitrogen and aluminum is doped into the piezoelectric thin film formed from aluminum nitride, and a synthetic acoustic velocity of portions of the piezoelectric resonator other than the single crystal Si layer substantially coincide with the acoustic velocity of the single crystal Si layer.
    Type: Grant
    Filed: January 21, 2016
    Date of Patent: September 4, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventor: Keiichi Umeda
  • Publication number: 20180226937
    Abstract: A resonance device that includes a lower cover formed from non-degenerate silicon; a resonator having a degenerate silicon substrate with a lower surface facing the lower cover, and including first and second electrode layers laminated on the substrate with a piezoelectric film formed therebetween and having a surface opposing an upper surface of the substrate. Moreover, the lower surface of the substrate has an adjustment region where a depth or height of projections and recesses formed on the surface is larger than that in another region of the lower surface of the substrate or is a region where an area of the projections and recesses is larger than that in the other region of the lower surface of the substrate.
    Type: Application
    Filed: March 30, 2018
    Publication date: August 9, 2018
    Inventors: Keiichi Umeda, Takehiko Kishi, Hiroshi Yamada, Masakazu Fukumitsu
  • Publication number: 20180192203
    Abstract: A piezoelectric element includes a first piezoelectric layer which has a first polarization axis direction in a thickness direction of the first piezoelectric layer and is made of AlN. A second piezoelectric layer made of GeAIN which is deposited on the first piezoelectric layer and has a second polarization axis direction opposite to the first polarization axis direction. A first electrode is provided on a side of the first piezoelectric layer which is opposite from a side where the second piezoelectric layer is disposed. A second electrode provided on a side of the second piezoelectric layer which is opposite from a side where the first piezoelectric layer is disposed.
    Type: Application
    Filed: March 1, 2018
    Publication date: July 5, 2018
    Inventors: Keiichi Umeda, Takaaki Mizuno
  • Patent number: 9972769
    Abstract: A piezoelectric thin film comprising aluminum nitride containing magnesium and hafnium, wherein a content of the hafnium based on 100 atomic % of the magnesium is 8 atomic % or more and less than 100 atomic %, and a total content of the magnesium and hafnium based on a sum of a content of the magnesium, hafnium, and aluminum is in a range of 47 atomic % or less.
    Type: Grant
    Filed: June 8, 2015
    Date of Patent: May 15, 2018
    Assignees: MURATA MANUFACTURING CO., LTD., NATIONAL INSTlTUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Keiichi Umeda, Atsushi Honda, Morito Akiyama, Toshimi Nagase, Keiko Nishikubo, Masato Uehara
  • Patent number: 9948274
    Abstract: A surface acoustic wave device includes a high acoustic velocity film in which a transversal wave propagates at a higher acoustic velocity than in a ScAlN film laminated on a substrate made of silicon or glass. The ScAlN film is laminated on the high acoustic velocity film, and IDT electrodes are laminated on the ScAlN film.
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: April 17, 2018
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Keiichi Umeda, Ryo Nakagawa, Atsushi Tanaka
  • Patent number: 9905748
    Abstract: A vibrating device that is in the form of a rectangular plate having opposed long sides and opposed short sides, and that utilizes an expanding and contracting vibration mode in a direction of the short sides. The vibrating device includes a Si layer made of a degenerate semiconductor, a silicon oxide layer, a piezoelectric layer, and first and second electrodes through which a voltage is applied to the piezoelectric layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the TCF in the vibrating device when the silicon oxide layer 3 is not provided is denoted by x(ppm/K), T2/(T1+T2) is within a range of (?0.0003x2?0.0256x+0.0008)±0.05.
    Type: Grant
    Filed: November 12, 2015
    Date of Patent: February 27, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Toshio Nishimura, Keiichi Umeda, Takashi Hase, Keisuke Takeyama, Takehiko Kishi, Hiroshi Yamada
  • Patent number: 9893270
    Abstract: A method for manufacturing a piezoelectric bulk acoustic wave element by forming a sacrificial layer on a part of a primary surface of a substrate. A piezoelectric film sandwiched between a pair of electrodes is formed on the primary surface of the substrate so as to cover the sacrificial layer, the piezoelectric film being formed from scandium-containing aluminum nitride having a scandium atomic concentration with respect to the total number of scandium atoms and aluminum atoms of more than 24 atomic percent. An etching step of removing the sacrificial layer by etching is performed. Prior to the etching step, a protective film formed from aluminum nitride or scandium-containing aluminum nitride having a lower scandium atomic concentration than that of the piezoelectric film is provided so as to cover at least a part of a portion of the piezoelectric film located in a region in which the sacrificial layer is provided.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: February 13, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Kiyoto Araki, Keiichi Umeda
  • Patent number: 9866199
    Abstract: A vibrating device having tuning fork arms extending in a first direction that are joined to a base portion and are arranged side by side in an second direction. Each of the tuning fork arms has a structure that a silicon oxide layer is laminated on a Si layer made of a degenerate semiconductor, and that an excitation portion is provided on the silicon oxide layer. When a total thickness of the Si layer is denoted by T1, a total thickness of the silicon oxide layer is denoted by T2, and the temperature coefficient of resonant frequency (TCF) when the silicon oxide layer is not provided on the Si layer is denoted by x, a thickness ratio T2/(T1+T2) is within a range of (?0.0002x2?0.0136x+0.0014)±0.05.
    Type: Grant
    Filed: November 10, 2015
    Date of Patent: January 9, 2018
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Toshio Nishimura, Takashi Hase, Keisuke Takeyama, Hiroaki Kaida, Keiichi Umeda, Takehiko Kishi, Hiroshi Yamada
  • Patent number: 9831416
    Abstract: A piezoelectric member that achieves a high sound speed includes a silicon-containing substrate and a piezoelectric layer. The piezoelectric layer is disposed on the silicon-containing substrate. At least a surface layer of the piezoelectric layer on a side opposite to the silicon-containing substrate is made of BxAl1-xN (0<x?0.2).
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: November 28, 2017
    Assignees: MURATA MANUFACTURING CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE
    Inventors: Keiichi Umeda, Atsushi Honda, Atsushi Tanaka, Masashi Omura, Morito Akiyama
  • Publication number: 20170294894
    Abstract: A piezoelectric film that includes crystalline AlN; at least one first element partially replacing Al in the crystalline AlN; and a second element doping the crystalline AlN and which has an ionic radius smaller than that of the first element and larger than that of Al.
    Type: Application
    Filed: June 26, 2017
    Publication date: October 12, 2017
    Inventors: YASUHIRO AIDA, Keiichi Umeda
  • Publication number: 20170272050
    Abstract: A method for manufacturing a resonator that effectively addresses variations in resistivity for each wafer. The method for manufacturing a resonator includes forming a Si oxide film on a surface of a degenerated Si wafer, where the Si oxide film has a thickness set that is based on the doping amount of impurity in the degenerated Si wafer.
    Type: Application
    Filed: June 1, 2017
    Publication date: September 21, 2017
    Inventors: Keiichi Umeda, Hiroshi Yamada, Yasuhiro Aida