Abstract: A controller is provided that is configured to execute: predicting a distribution of first users in a predetermined area; predicting, based on the predicted distribution of the first users, a first point that is a point where a density of the first users exceeds a predetermined upper limit value in the predetermined area in the future; and transmitting, to a terminal of a second user who is a provider of a service, information about prompting provision of the service at a second point other than the first point in the predetermined area.

Abstract: A controller of an information processing apparatus disclosed obtains first information about a tendency of move of a user staying in a specific facility. The controller forecasts, on the basis of the first information, an expected destination of move to which the user will move from the specific facility and an expected time slot of move during which the user will start to move from the specific facility to the expected destination of move. The controller calculates the number of users who are expected to move from the specific facility to the expected destination of move in each expected time slot of move on a slot-by-slot basis.

Abstract: When an information processing apparatus disclosed receives a signal requesting dispatch of a taxi with information about a desired location of getting-in, it determines a recommended location of getting-in on the basis of at least one of information about a physical condition relating to a road in a specific area including the desired location of getting-in, information about instances of users' getting in and/or getting out of taxis that took place in the specific area in the past, and information about a condition of the road in the specific area. The information processing apparatus sends information for inviting a user to wait at the recommended location of getting-in determined as above to a user's terminal used by the user.

Abstract: A controller of an information processing apparatus disclosed obtains first information about a tendency of move of a user staying in a specific facility. The controller forecasts, on the basis of the first information, an expected destination of move to which the user will move from the specific facility and an expected time slot of move during which the user will start to move from the specific facility to the expected destination of move. The controller calculates the number of users who are expected to move from the specific facility to the expected destination of move in each expected time slot of move on a slot-by-slot basis.

Abstract: A controller is provided that is configured to execute: predicting a distribution of first users in a predetermined area; predicting, based on the predicted distribution of the first users, a first point that is a point where a density of the first users exceeds a predetermined upper limit value in the predetermined area in the future; and transmitting, to a terminal of a second user who is a provider of a service, information about prompting provision of the service at a second point other than the first point in the predetermined area.

Abstract: This invention relates to a composition using a ruthenium oxide and/or a polynary ruthenium oxide as conducting components and using a Cu containing glass frit.

Abstract: An object of the present invention is to provide a lead-free bismuth glass wherein decrease of the degree of accuracy of the patterning is prevented. Specifically, the present invention provides a lead-free bismuth glass characterized in that said lead-free bismuth glass is used for an optical patterning glass material which is patterned by light irradiation and the optical-absorption coefficient to light with a wavelength of 365 nm is 300 to 3000 cm?1.

Abstract: This invention provides a thick-film type dielectric with desired adhesivity to the base and very good insulation properties. The dielectric of the present invention includes a lower dielectric layer made of a photosensitive composition and an upper dielectric layer which is made of a photosensitive composition and formed on the aforementioned lower dielectric layer. The softening point (T1) of the primary glass powder used for the aforementioned lower dielectric layer, the softening point (T2) of the primary glass powder used for the aforementioned upper dielectric layer, and the firing temperature (T3) of the aforementioned primary glass powder satisfy the following relationship: T1<T3<T2<T3+30° C.

Abstract: This invention is directed to black conductive compositions, black electrodes made from such compositions and methods of forming such electrodes. In particular, the invention is directed to a single layer bus electrode.

Abstract: This invention relates to a composition using a ruthenium oxide and/or a polynary ruthenium oxide as conducting components and using a Cu containing glass frit.

Abstract: The invention is directed to black conductive composition(s), black electrodes made from such compositions and methods of forming such electrodes. In particular, the invention is directed to flat panel display applications, including alternating-current display panel applications. Still further, the invention is directed to composition(s) utilizing conductive metal oxides selected from an oxide of two or more elements selected from Ba, Ru, Ca, Cu, Sr, Bi, Pb, and the rare earth metals and photocrosslinkable polymers. These compositions are particularly useful in making photoimageable black electrodes for flat panel display applications.

Abstract: An object of the present invention is to provide a lead-free bismuth glass wherein decrease of the degree of accuracy of the patterning is prevented. Specifically, the present invention provides a lead-free bismuth glass characterized in that said lead-free bismuth glass is used for an optical patterning glass material which is patterned by light irradiation and the optical-absorption coefficient to light with a wavelength of 365 nm is 300 to 3000 cm?1.

Abstract: This invention is directed to black conductive compositions, black electrodes made from such compositions and methods of forming such electrodes. In particular, the invention is directed to a single layer bus electrode.

Abstract: The present invention provides a method for forming a black electrode by performing sintering at a temperature in the range of 500-600° C. after applying a lead-free black conductive composition to a substrate. The aforementioned black electrode comprises a binder comprising a crystallized glass component. The aforementioned black conductive composition comprises conductive particles of black RuO2, lead-free black ruthenium-based polyoxide, and mixtures thereof in an amount of 4-30 wt %, based on the total weight of the composition, a lead-free non-conductive black oxide in an amount of 0-30 wt %, based on the total weight of the composition, and a lead-free bismuth-based glass binder in an amount of 10-50 wt %, based on the total weight of the composition.

Abstract: The present invention provides a method for forming a black electrode by performing sintering at a temperature in the range of 500-600° C. after applying a lead-free black conductive composition to a substrate. The aforementioned black electrode comprises a binder comprising a crystallized glass component. The aforementioned black conductive composition comprises conductive particles of black RuO2, lead-free black ruthenium-based polyoxide, and mixtures thereof in an amount of 4-30 wt %, based on the total weight of the composition, a lead-free non-conductive black oxide in an amount of 0-30 wt %, based on the total weight of the composition, and a lead-free bismuth-based glass binder in an amount of 10-50 wt %, based on the total weight of the composition.

Abstract: This invention is directed to black conductive compositions, black electrodes made from such compositions and methods of forming such electrodes. In particular, the invention is directed to a single layer bus electrode.

Abstract: This invention is directed to black conductive compositions, black electrodes made from such compositions and methods of forming such electrodes.

Abstract: A composition utilized in and a method for forming an electrode used in field emission type of display devices said composition is a photosensitive copper conductive composition comprising: a mixture of (a) copper powder at least 70 wt % out of 100 wt % copper powders having a particle size in the range of 0.2-3 ?m and (b) an inorganic binder with a softening point in the range of 380-580° C. in an amount of 140 wt % based on 100 wt % copper powders, said mixture being dispersed in an organic vehicle comprising (c) an organic polymer binder, (d) a phototoinitiator, (e) a photohardenable monomer, and an organic solvent; and the photosensitive copper conductive composition being fireable at a temperature in the range of 450-600° C. in a reductive atmosphere.

Abstract: The present invention provides ern. The dielectric has a lower dielectric layer composed of a photosensitive composition and an upper dielectric layer, composed of a photosensitive composition formed on the above-mentioned lower dielectric layer, are included, with the transmittance of the above-mentioned upper dielectric layer to light used in a certain pattern exposure being lower than the transmittance of the above-mentioned lower dielectric layer to the light used in said pattern exposure.

Abstract: A composition utilized in and a method for forming an electrode used in field emission type of display devices said composition is a photosensitive copper conductive composition comprising: a mixture of (a) copper powder at least 70 wt % out of 100 wt % copper powders having a particle size in the range of 0.2-3 ?m and (b) an inorganic binder with a softening point in the range of 380-580° C. in an amount of 1-40 wt % based on 100 wt % copper powders, said mixture being dispersed in an organic vehicle comprising (c) an organic polymer binder, (d) a phototoinitiator, (e) a photohardenable monomer, and an organic solvent; and the photosensitive copper conductive composition being fireable at a temperature in the range of 450-600° C. in a reductive atmosphere.