Abstract: A processing liquid supply system includes a tank that stores a processing liquid supplied from a processing liquid supply, a circulation passage that is connected to the tank, a plurality of supply passages that is connected to the circulation passage and supplies the processing liquid to each of a plurality of liquid processing units that perform a liquid processing on a substrate, a first pump filter set that is a combination of a first pump and a plurality of first filters provided downstream of the first pump, and a second pump filter set that is a combination of a second pump and a plurality of second filters provided downstream of the second pump. The first pump filter set and the second pump filter set are arranged in series in the circulation passage such that the first pump filter set is located upstream of the second pump filter set.

Abstract: Provided is a method of evaluating a silicon wafer, the method including a first determination that determines the presence or absence of an abnormality by inspecting a surface of an evaluation-target silicon wafer with a light scattering type surface inspection device; and a second determination that determines the presence or absence of an abnormality through observing, with an atomic force microscope, a region of the surface of the evaluation-target silicon wafer, where the presence of an abnormality has not been confirmed in the first determination.

Abstract: A method of evaluating a semiconductor wafer by a laser surface inspection device. The method includes performing evaluation of the wafer by detecting a defect kind of one of a deposit and a non-deposited convex defect present on a surface of a coating layer as a light point defect based on a plurality of measurement results including three kinds of low incidence angle measurement results obtained by, on the surface of the coating layer, reception of a radiated light radiated by reflection or scattering of a light incident from a first incident system at the surface by three kinds of light receiving systems, and at least one high incidence angle measurement result obtained by reception of a radiated light radiated by reflection or scattering of a light incident from a second incident system at the surface by at least one of the three kinds of light receiving systems.

Abstract: The method includes detecting a COP in a surface of a reference wafer with a laser surface inspection apparatus to be calibrated and an apparatus for calibration that obtains an X coordinate position and a Y coordinate position of the COP; determining a COP that is detected as the same COP with a determination criterion that a positional difference between a detected position obtained by the laser surface inspection apparatus to be calibrated and a detected position obtained by the apparatus for calibration on the reference wafer surface is within a threshold range; and calibrating the coordinate position identification accuracy of the laser surface inspection apparatus to be calibrated by adopting the X and Y coordinate positions obtained by the apparatus for calibration as true values of the X and Y coordinate positions.

Abstract: Provided is a method of preparing a sample surface on which a marking is formed, wherein the marking is a local oxide film locally formed on the sample surface, the local oxide film is formed by applying voltage between a probe and the sample surface while a tip of the probe is in contact with the sample surface, and the probe is brought into contact with the sample surface after moisture supply.

Abstract: A method of evaluating a semiconductor wafer, which has a polished surface, by using a laser surface-inspection device including light-incident and light-receiving systems, includes evaluating the semiconductor wafer by detecting, as a light point defect, an abnormality of a process-induced defect and a surface-adhered foreign matter present on the polished surface of the semiconductor wafer, on the basis of measurement result obtained by directing incident light to the polished surface of the semiconductor wafer from one light-incident system and receiving, with a first light-receiving system, radiation light which has been radiated by the incident light being reflected or scattered by the polished surface, measurement result obtained by receiving the radiation light with a second light-receiving system, and measurement result obtained by receiving the radiation light with a third light-receiving system, and at least one of a light-receiving angle and polarization selectivity differs among the first, second

Abstract: A method of evaluating a semiconductor wafer, which has a polished surface, by using a laser surface-inspection device including light-incident and light-receiving systems, includes evaluating the semiconductor wafer by detecting, as a light point defect, an abnormality of a process-induced defect and a surface-adhered foreign matter present on the polished surface of the semiconductor wafer, on the basis of measurement result obtained by directing incident light to the polished surface of the semiconductor wafer from one light-incident system and receiving, with a first light-receiving system, radiation light which has been radiated by the incident light being reflected or scattered by the polished surface, measurement result obtained by receiving the radiation light with a second light-receiving system, and measurement result obtained by receiving the radiation light with a third light-receiving system, and at least one of a light-receiving angle and polarization selectivity differs among the first, second

Abstract: A method of evaluating a semiconductor wafer, which has a polished surface, by using a laser surface-inspection device including incident and light-receiving systems, includes evaluating the semiconductor wafer by detecting, as a light point defect, an abnormality of a process-induced defect and a surface-adhered foreign matter present on the polished surface of the semiconductor wafer, on the basis of measurement result obtained by directing incident light to the polished surface of the semiconductor wafer from one incident system and receiving, with a first light-receiving system, radiation light which has been radiated by the incident light being reflected or scattered by the polished surface, measurement result obtained by receiving the radiation light with a second light-receiving system, and measurement result obtained by receiving the radiation light with a third light-receiving system, and at least one of a light-receiving angle and polarization selectivity differs among the first, second and third li

Abstract: Provided is a method of evaluating a silicon wafer, the method including a first determination that determines the presence or absence of an abnormality by inspecting a surface of an evaluation-target silicon wafer with a light scattering type surface inspection device; and a second determination that determines the presence or absence of an abnormality through observing, with an atomic force microscope, a region of the surface of the evaluation-target silicon wafer, where the presence of an abnormality has not been confirmed in the first determination.

Abstract: Provided is a method of preparing a sample surface on which a marking is formed, wherein the marking is a local oxide film locally formed on the sample surface, the local oxide film is formed by applying voltage between a probe and the sample surface while a tip of the probe is in contact with the sample surface, and the probe is brought into contact with the sample surface after moisture supply.

Abstract: A method of evaluating a semiconductor wafer, which has a polished surface, by using a laser surface-inspection device including incident and light-receiving systems, includes evaluating the semiconductor wafer by detecting, as a light point defect, an abnormality of a process-induced defect and a surface-adhered foreign matter present on the polished surface of the semiconductor wafer, on the basis of measurement result obtained by directing incident light to the polished surface of the semiconductor wafer from one incident system and receiving, with a first light-receiving system, radiation light which has been radiated by the incident light being reflected or scattered by the polished surface, measurement result obtained by receiving the radiation light with a second light-receiving system, and measurement result obtained by receiving the radiation light with a third light-receiving system, and at least one of a light-receiving angle and polarization selectivity differs among the first, second and third li

Abstract: The method of evaluating an epitaxial wafer includes performing evaluation of an epitaxial wafer by detecting, as a light point defect, an abnormal substance selected from the group consisting of a defect and a surface deposit of an epitaxial wafer to be evaluated with a surface inspection apparatus including two types of incidence systems with different incidence angles and two types of light receiving systems with different light receiving angles, based on two types of measurement results.

Abstract: To provide a cleaning method which makes it possible to reduce alkaline component mixing in an ozone cleaning solution, thereby preventing impairment of cleaning ability of ozone. In the cleaning method, before chuck members retain another workpiece having previously been dipped in an ozone cleaning solution in an ozone cleaning tank, alkaline component attached to part of transfer arms and the chuck members is removed by cleaning, thereby preventing the alkaline component from mixing into the ozone cleaning solution.

Abstract: The method of evaluating an epitaxial wafer includes performing evaluation of an epitaxial wafer by detecting, as a light point defect, an abnormal substance selected from the group consisting of a defect and a surface deposit of an epitaxial wafer to be evaluated with a surface inspection apparatus including two types of incidence systems with different incidence angles and two types of light receiving systems with different light receiving angles, based on two types of measurement results.

Abstract: According to an embodiment, an information terminal apparatus includes: a display device equipped with a touch panel; a position detecting section configured to detect a position of a finger in a space which includes a predetermined three-dimensional motion judgment space FDA set in advance separated from a display surface of the display device; and a position information transmitting section configured to transmit position information about the finger in the motion judgment space detected by the position detecting section before the touch panel is touched.

Abstract: According to an embodiment, an information terminal apparatus includes: a display device equipped with a touch panel; a position detecting section configured to detect a position of a material body in a three-dimensional space opposite to a display surface of the display device; and a command generating section configured to generate a predetermined command for causing predetermined processing to be executed, on the basis of touch position information of a touch position on the touch panel by a touch operation on the touch panel and position-in-space information of the material body in the three-dimensional space detected by the position detecting section after the touch panel is touched or in a state of the touch panel being touched.

Abstract: According to one embodiment, an optical device includes emission of an image projecting light source and emission of an optical path length measuring light source are provided by a light projecting device and respective beams are directed to a moveable mirror. In accordance with the movement of moveable mirror, an image projecting light scans a target and an image is displayed. Reflected light is scattered from the target and reaches a photodetector. By calculating the time difference of reference light and reflected light detected by the photodetector, the distance of the optical device and a reflection point of an optical path length measuring light is computed. By combining the computed optical path length data and angle data of the moveable mirror, the reflecting point of the optical path length measuring light is determined.

Abstract: According to one embodiment, an optical device includes emission of an image projecting light source and emission of an optical path length measuring light source are provided by a light projecting device and respective beams are directed to a moveable mirror. In accordance with the movement of moveable mirror, an image projecting light scans a target and an image is displayed. Reflected light is scattered from the target and reaches a photodetector. By calculating the time difference of reference light and reflected light detected by the photodetector, the distance of the optical device and a reflection point of an optical path length measuring light is computed. By combining the computed optical path length data and angle data of the moveable mirror, the reflecting point of the optical path length measuring light is determined.

Abstract: To provide a cleaning method which makes it possible to reduce alkaline component mixing in an ozone cleaning solution, thereby preventing impairment of cleaning ability of ozone. In the cleaning method, before chuck members retain another workpiece having previously been dipped in an ozone cleaning solution in an ozone cleaning tank, alkaline component attached to part of transfer arms and the chuck members is removed by cleaning, thereby preventing the alkaline component from mixing into the ozone cleaning solution.

Abstract: A method for working at least one end of a steel pipe by upsetting and pressing which comprises an external upset portion having an outer taper being shaped by upset forging, the portion then being pressed by an internal upset die so as to displace the outer taper to an internal upset portion having an inner taper and then internal upset forging being applied by the internal upset die, thereby forming accurately the length of the inner taper and the curvature of a starting point of the portion having the inner taper.