Abstract: To realize a low power consumption and a small area of a network communication system and a semiconductor device for mounting the same. In the processing method of the network router or network communication frame, the received frame is input to the hash generator, to obtain an address based on the resulting hash value, the position of the address in the rule table, stores the rule corresponding to the received frame.

Abstract: A semiconductor device capable of improving the efficiencies of communication systems is provided. The semiconductor device comprises: an open period in which reception of data or transmission is allowed; a clock generation circuit defining a close period in which transmission of data and reception are not allowed; and a TSN controller connected to the clock generation circuit and performing transmission of data or reception, wherein the TSN controller performs semiconductor device or reception at another time than open period.

Abstract: To realize a low power consumption and a small area of a network communication system and a semiconductor device for mounting the same. In the processing method of the network router or network communication frame, the received frame is input to the hash generator, to obtain an address based on the resulting hash value, the position of the address in the rule table, stores the rule corresponding to the received frame.

Abstract: A semiconductor device capable of improving the efficiencies of communication systems is provided. The semiconductor device comprises: an open period in which reception of data or transmission is allowed; a clock generation circuit defining a close period in which transmission of data and reception are not allowed; and a TSN controller connected to the clock generation circuit and performing transmission of data or reception, wherein the TSN controller performs semiconductor device or reception at another time than open period.

Abstract: When the conversion arithmetic of the numerical type of floating-point data and integer data is performed by software, the load of the CPU becomes heavy. A semiconductor device includes a memory, a bus coupled to the memory, a bus master coupled to the bus, and a conversion arithmetic circuit coupled to the bus. The conversion arithmetic circuit includes a floating-point data adder-subtracter, an integer data adder-subtracter, and a shift operator. The semiconductor device converts the floating-point data to the integer data or converts the integer data to the floating-point data, without employing a multiplier and a divider of the floating-point data.

Abstract: A high quality transparent SiC thin film can be deposited on the surface of a plastic material at low temperature utilizing Electron Cyclotron Resonance (ECR) Plasma CVD techniques, thereby enhancing surfacial hardness without spoiling designability. A magnetic field is applied to a plasma generating chamber by means of a surrounding magnetic coil. Microwaves are then introduced into the plasma generating chamber. Further, an upstream gas is introduced into the plasma generating chamber. ECR plasma is thus generated. A downstream gas is then supplied to the chamber from an inlet. Furthermore, the ECR plasma is passed through a mesh placed between the inlet and a polymer base material or between the plasma generating chamber and the inlet. Accordingly, a SiC film is deposited on a surface of a polymer base material.

Abstract: A method of depositing a thin film on a polymer substrate by plasma CVD comprises applying a magnetic field to a plasma generating chamber by activating a magnetic coil placed in the circumference of the plasma generating chamber, the plasma generating chamber having an inlet; introducing a microwave into the plasma generating chamber; introducing an upstream gas into the plasma generating chamber wherein an ECR plasma is generated; vaporizing a feed gas wherein a supply gas is generated and carries the ECR plasma; passing said ECR plasma through a mesh provided between the inlet and a polymer substrate located downstream of the inlet; and depositing a film on the surface of the polymer substrate.

Abstract: The lubricant layer according to the present invention is used in a thin film magnetic recording medium in which a solid surface sliding at a high speed is required to retain its lubricating performance and abrasion resistance for a long period of time, comprising a host-guest complex composed of a lubricant molecule as a guest molecule and a multidentate ligand as a host compound to form the complex with the guest molecule.

Abstract: The lubricant layer according to the present invention is used in a thin film magnetic recording medium in which a solid surface sliding at a high speed is required to retain its lubricating performance and abrasion resistance for a long period of time, comprising a host-guest complex composed of a lubricant molecule as a guest molecule and a multidentate ligand as a host compound to form the complex with the guest molecule.