Abstract: A magnetic film forming system which can always apply a magnetic field to a substrate in a constant direction is disclosed. The magnetic film forming system includes a vacuum container, a substrate pallet for holding a substrate in the vacuum container and being removable while still holding the substrate, from the vacuum container, and means for supporting the substrate pallet. Magnetic field generation means are fixed to the substrate pallet for applying a magnetic field to the substrate. When the substrate pallet is removed from the vacuum container, the magnetic field generation means are also taken out together with the substrate.

Abstract: A magnetic film forming system which can always apply a magnetic field to a substrate in a constant direction. The magnetic film forming system comprises a vacuum container, a substrate pallet for holding a substrate in the vacuum container and being removable with the substrate held, from the vacuum container, and means for supporting the substrate pallet. Magnetic field generation means are fixed to the substrate pallet for applying a magnetic field to the substrate. When the substrate pallet is removed from the vacuum container, the magnetic field generation means are also taken out together with the substrate.

Abstract: A magnetic film forming system which can always apply a magnetic field to a substrate in a constant direction. The magnetic film forming system comprises a vacuum container, a substrate pallet for holding a substrate in the vacuum container and being removable with the substrate held, from the vacuum container, and means for supporting the substrate pallet. Magnetic field generation means are fixed to the substrate pallet for applying a magnetic field to the substrate. When the substrate pallet is removed from the vacuum container, the magnetic field generation means are also taken out together with the substrate.

Abstract: An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

Abstract: An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

Abstract: There is disclosed a catalyst for ortho-alkylation of phenols obtained by calcination of a catalyst precursor comprising a dry mixture of:(a) manganese oxalate;(b) phenolic resin fine particles; and(c) at least one magnesium compound selected from the group consisting of basic magnesium carbonate and magnesium hydroxide.There is further disclosed a process for producing ortho-alkylated phenols by the gas phase reaction between an alkyl alcohol and a phenol in the presence of the ortho-alkylation catalyst defined above.

Abstract: This invention relates to a method and an apparatus for forming a film, which are suitable for forming a film of a semiconductor, dielectric, metal, insulator, or organic substance. In order to form a film of high purity and quality at high speed, a particle beam such as an ion beam, an electron beam, or a plasma is applied to a sputtering target comprising a substance formed by bonding atoms or molecules with either van der Waals forces or hydrogen bonding forces, the particles are sputtered thereby from the target, fly in the space in the vacuum chamber, reach the substrate on which they are deposited to form a desired film.

Abstract: A sputtering apparatus for sputtering magnetic materials. The apparatus comprises at least one pair of magnetic field-generating sources, a substrate disposed within the magnetic field-generating sources, a target disposed opposite to the substrate, and a magnetic thin plate disposed at a side of the substrate which is remote from the target. The magnetic thin plate is disposed at a position in close contact with the substrate or a position slightly away from the substrate, or is disposed movably between such positions. When sputtering a magnetic material onto the substrate, a uniform magnetic field can be generated on the substrate surface by virtue of the provision of the thin magnetic plate.

Abstract: A line voltage charging type DC circuit breaker for use in DC transmission, having a series circuit connected in parallel with a commutation breaker, the series circuit being constituted by a capacitor to be charged by a line voltage, a reactor, and a circuit-closing means connected in series with each other, the DC circuit breaker comprising a circuit for charging the capacitor, the charging circuit including a current direction restricting circuit for restricting a current flowing through the restricting circuit only in one direction and a reverse control circuit for controlling the current direction restricting circuit to reverse the direction of a current for charging the capacitor in accordance with the power flow reversal control of the DC transmission.

Abstract: There is disclosed a high-voltage DC circuit breaker apparatus with reverse current insertion system by line voltage charge, which comprises a commutation switch, a series circuit of a capacitor, a reactor and a switch connected in parallel with the commutation switch, a resistor connected so as to charge the capacitor by a line voltage. The charging time constant of the capacitor determined by the capacity of the capacitor and the resistor is used as a reference in a manner so that the rise time constant of the line voltage is smaller than the charging time constant of the capacitor, and the rise time constant of the line current is larger than the charging time constant of the capacitor, thereby interrupting the fault current without fail.