Abstract: A semiconductor laser device includes a light emitting unit including an active layer and an n-type semiconductor layer and a p-type semiconductor layer that sandwich the active layer. The n-type semiconductor layer includes a first n-type cladding layer and a second n-type cladding layer. The p-type semiconductor layer includes a first p-type cladding layer and a second p-type cladding layer. The n-type semiconductor layer has a greater thickness than the p-type semiconductor layer. An n-type thickness ratio, which is a ratio of a thickness of the first n-type cladding layer to a thickness of the second n-type cladding layer, is equal to a p-type thickness ratio, which is a ratio of a thickness of the first p-type cladding layer to a thickness of the second p-type cladding layer. The n-type thickness ratio and the p-type thickness ratio are each greater than 1.25 and less than or equal to 3.75.

Abstract: It is provided a motion line processing system, which can access motion line information including a history of movement of a person, event definition information including a condition for determining an occurrence of an event in a predetermined region, and transaction information including information of transaction of a product, comprising: an event information creation unit configured to analyze the motion line information with reference to the event definition information, and create event information including a start time of the event, an end time of the event, and identification information of a person who has caused the event; and an association processing unit configured to compare the event information with a transaction date/time, and associate the motion line information with the transaction information in a case where the transaction date/time is included between the start time and the end time, and the event is a transaction event at a transaction location.