Abstract: A wafer chuck includes a base made of a ceramic containing silicon carbide. The base has an oxidation-treated layer, and a film made of diamond-like carbon (DLC) is formed on an outermost surface of the base.

Abstract: A wafer chuck includes a base made of a ceramic containing silicon carbide. The base has an oxidation-treated layer, and a film made of diamond-like carbon (DLC) is formed on an outermost surface of the base.

Abstract: A substrate holding board includes a first layer and a second layer forming an interfacial surface with the first layer. The first layer and the second layer contain diamond-like carbon. A refractive index of the first layer in a wavelength is higher than a refractive index of the second layer in the wavelength. A distance from the second layer to a topmost surface of the substrate holding board is smaller than a thickness of the first layer.

Abstract: A wafer chuck includes a base made of a ceramic containing silicon carbide. The base has an oxidation-treated layer, and a film made of diamond-like carbon (DLC) is formed on an outermost surface of the base.

Abstract: The invention provides a method for producing an orexin neuron by culturing a pluripotent stem cell or a neural progenitor cell in the presence of N-acetyl-D-mannosamine and optionally in the presence of at least one inhibitor selected from the group consisting of a Sirtuin 1 inhibitor and an O-linked ?-N-acetylglucosamine transferase inhibitor. The invention also provides a therapeutic agent for narcolepsy or eating disorders, such as anorexia, containing N-acetyl-D-mannosamine, which is based on the induction of orexin neuron in vivo.

Abstract: Provided is a method of producing an optical element forming mold, the method including forming a ta-C film 12 on a mold matrix 10 for an optical element forming mold by an FCVA process, in which the mold matrix 10 is kept at a floating potential, a voltage is applied to a mold matrix-holding member 2 for holding the mold matrix via insulating members (3a,3b), and a magnet 4 internally provided in the mold matrix forms a magnetic field for applying a magnetic force in a normal direction of a transfer surface of the mold matrix so as to follow a magnetic force applied by a filter coil 22, thereby homogenizing the film quality.

Abstract: The invention provides a method for producing an orexin neuron by culturing a pluripotent stem cell or a neural progenitor cell in the presence of N-acetyl-D-mannosamine and optionally in the presence of at least one inhibitor selected from the group consisting of a Sirtuin 1 inhibitor and an O-linked ?-N-acetylglucosamine transferase inhibitor. The invention also provides a therapeutic agent for narcolepsy or eating disorders, such as anorexia, containing N-acetyl-D-mannosamine, which is based on the induction of orexin neuron in vivo.

Abstract: Provided is a method of producing an optical element forming mold, the method including forming a ta-C film 12 on a mold matrix 10 for an optical element forming mold by an FCVA process, in which the mold matrix 10 is kept at a floating potential, a voltage is applied to a mold matrix-holding member 2 for holding the mold matrix via insulating members (3a,3b), and a magnet 4 internally provided in the mold matrix forms a magnetic field for applying a magnetic force in a normal direction of a transfer surface of the mold matrix so as to follow a magnetic force applied by a filter coil 22, thereby homogenizing the film quality.

Abstract: The present invention provides a method of preparing an anti-methylated DNA antibody, comprising a step of administering to an animal an oligodeoxyribonucleotide containing a methylated cytosine(s) and an oligodeoxyribonucleotide containing no methylated cytosine. The antibody prepared by this method is capable of detecting a DNA containing a methylated cytosine(s) in a state close to the state of a biological component.

Abstract: A diamond product comprising a semiconductor layer having an outer surface region of graphite in contact with the metal electrode to form an ohmic junction with the metal electrode, wherein the outer surface region of graphite has a thickness of at least about 12 Å.

Abstract: A diamond covered member which has a diamond crystal layer is formed by vapor phase synthesis on a surface of a substrate. The process comprises depositing plate-shaped diamond crystals by CVD at a carbon source concentration ranging from 0.01 to 10% at an atomic ratio of oxygen to carbon (O/C) of 0.5.ltoreq.(O/C).ltoreq.1.2 in a starting gas. The crystals may also be deposited by a burning flame method using an oxygen-acetylene flame at a molar ratio of oxygen to acetylene in a main starting gas in the range of 0.9.ltoreq.(O.sub.2 /C.sub.2 H.sub.2).ltoreq.1.0. The plate-shaped diamond crystals are grown to coalesce into a film to form the diamond crystal layer.

Abstract: In a method for forming a diamond film by a high-frequency plasma CVD method, an inductive coupling discharge is used and the frequency of a high-frequency wave is set in the range of from 40 to 250 MHz, whereby a starting gas containing carbon is decomposed in a plasma state and a diamond film is formed on a substrate.

Abstract: There is disclosed a mold for pressing molding of an optical element of glass. On at least the molding surface of the mold base of the mold, there is formed a mixing layer which consists of carbon and at least one of the elements constituting the mold base. The atomic percentage of carbon increases toward the molding surface and decreases toward the mold base, while the atomic percentage of the other element decreases toward the surface and increases toward the mold base. The mold may contain an intermediate layer at least on the molding surface of the mold base.

Abstract: A diamond electronic device constituted of a diamond crystal formed on a substrate comprises a diamond crystal having the ratio (h/L) of length (h) of the diamond crystal in direction substantially perpendicular to the face of the substrate to length (L) of the diamond crystal in direction parallel to the face of the substrate ranging from 1/4 to 1/1000 and an upper face of the diamond crystal making an angle of from substantially 0.degree. to 10.degree. to the face of the substrate, and a semiconductor layer and an electrode layer provided on the diamond crystal, wherein the diamond crystal serves as a heat-radiating layer.

Abstract: A diamond crystal forming method with which a diamond crystal is formed on a substrate by a sputtering process uses high-frequency energy in the frequency range of 40 MHz to 250 MHz to form plasma.

Abstract: A diamond crystal comprises a tabular diamond crystal formed on a substrate by gas phase synthesis, wherein the diamond crystal has a ratio of thickness to width of from 1:4 to 1:1,000 and the surface of the substrate on which the diamond crystal has been formed and the top surface of the diamond crystal are at an angle ranging from 0.degree. to 10.degree..

Abstract: A diamond semiconductor device has a pn junction formed by a p-type diamond semiconductor portion containing boron as an impurity and an n-type diamond semiconductor portion containing lithium as an impurity. The diamond semiconductor is formed by a diamond crystal growth on a single nucleation site on an insulating substrate. Electroluminescene takes place in the diamond crystal.

Abstract: A diamond covered member is provided which has a diamond crystal layer formed by vapor phase synthesis on a surface of a substrate, the diamond crystal layer being constituted of plate-shaped diamond crystals at least at an initial stage of crystal growth, and being a polycrystal film formed by growth and coalescence of the plate-shaped diamond crystals, and the polycrystal film being uniformly oriented and having surface roughness (Rmax) of not larger than 0.2 .mu.m. A process for producing the diamond covered member is also provided. The diamond covered member has high hardness, high thermal conductivity, and high chemical stability.

Abstract: A tabular diamond crystal is formed on a substrate by gas phase synthesis, wherein the diamond crystal has a ratio of thickness to width of from 1:4 to 1:1,000 and the surface of the substrate on which the diamond crystal has been formed and the top surface of the diamond crystal are at an angle ranging from 0.degree. to 10.degree..

Abstract: A mold for use for press-molding an optical element, in which a molding surface of a mold base material is coated with a hard carbon film containing 0-5 atom% of hydrogen. It has a spin density of 1.times.10.sup.18 spin/cm.sup.3 or less and a film density of at least 1.5 g/cm.sup.3.