Abstract: Provided is a device for cell culture, the device including: a base material including a culture section used for culturing hematopoietic stem cells or hematopoietic progenitor cells, or both the hematopoietic stem cells and the hematopoietic progenitor cells, wherein the culture section includes a plurality of pores, and wherein a Young's modulus of the culture section measured according to JIS K 7161-1 and JIS K 7161-2 is at least 3 GPa.

Abstract: Provided is a culture bag accommodating a culture fluid, the culture bag is capable of suppressing foaming in the culture fluid when oscillating the culture fluid to perform a culture, and performing a culture with high efficiency. The culture bag includes a culture space accommodating a culture fluid, the culture space being an endless space to allow the culture fluid to circulate therein, in which the culture bag has an inner surface that comes into contact with the culture fluid to be accommodated therein, the inner surface including, at least in part thereof, a first surface formed of a fine structure and a second surface formed of a structure different from that of the first structure.

Abstract: Provided is a culture bag accommodating a culture fluid, the culture bag is capable of suppressing foaming in the culture fluid when oscillating the culture fluid to perform a culture, and performing a culture with high efficiency. The culture bag includes a culture space accommodating a culture fluid, the culture space being an endless space to allow the culture fluid to circulate therein, in which the culture bag has an inner surface that comes into contact with the culture fluid to be accommodated therein, the inner surface including, at least in part thereof, a concave-convex region having a concave-convex structure.

Abstract: A light-emitting device and a method for manufacturing the same capable of suppressing connection defects of light-emitting elements and improving electrical connectivity. A substrate includes a first mounting region for mounting a first light-emitting element, a second mounting region for mounting a second light-emitting element, a first electrode connected to one electrode of the first light-emitting element and one electrode of the second light-emitting element, a second electrode formed in the first mounting region and connected to the other electrode of the first light-emitting element, and a third electrode formed in the second mounting region and connected to the other electrode of the second light-emitting element. In the first electrode, a groove is formed between the first mounting region and the second mounting region.

Abstract: A display device which can achieve increased brightness and resolution and a method for manufacturing the same as well as a light-emitting device and a method for manufacturing the same are provided. The device includes a plurality of light-emitting elements having a first face, arranged in units of subpixels, and having at least one of a first electrically conducting electrode and second electrically conducting electrode on the first face, a substrate having an electrode corresponding to the electrode on the first face of the plurality of light-emitting elements, an anisotropic conductive film providing an anisotropic conductive connection between the electrode on the first face of the plurality of light-emitting elements and the electrode of the substrate, and a wavelength conversion member converting a wavelength of light from the light-emitting elements in units of subpixels.

Abstract: Provided is a culture bag accommodating a culture fluid, the culture bag is capable of suppressing foaming in the culture fluid when oscillating the culture fluid to perform a culture, and performing a culture with high efficiency. The culture bag includes a culture space accommodating a culture fluid, the culture space being an endless space to allow the culture fluid to circulate therein, in which the culture bag has an inner surface that comes into contact with the culture fluid to be accommodated therein, the inner surface including, at least in part thereof, a concave-convex region having a concave-convex structure.

Abstract: Provided is a culture bag accommodating a culture fluid, the culture bag is capable of suppressing foaming in the culture fluid when oscillating the culture fluid to perform a culture, and performing a culture with high efficiency. The culture bag includes a culture space accommodating a culture fluid, the culture space being an endless space to allow the culture fluid to circulate therein, in which the culture bag has an inner surface that comes into contact with the culture fluid to be accommodated therein, the inner surface including, at least in part thereof, a first surface formed of a fine structure and a second surface formed of a structure different from that of the first structure.

Abstract: A culture bag includes a culture portion which has a culture space configured to contain and culture a culture fluid. The culture space is an endless circumferential circulation space in which the culture fluid can circumferentially circulate. The culture fluid can continue to circumferentially circulate in one direction in the endless culture space. This suppresses complexification of flow of the culture fluid. As a result, bubbles can be suppressed from generating without decreasing culture efficiency.

Abstract: Provided is a composite substrate manufacturing method, including at least: a first raw board deforming step of preparing a first substrate by deforming a first raw board having at least one surface as a minor surface into a state in which the minor surface warps outward; and a joining step of joining, after the first raw board deforming step, a protruding surface of the first substrate and one surface of a second substrate to each other, thereby manufacturing a composite substrate including the first substrate and the second substrate, in which the second substrate is any one substrate selected from a substrate having both surfaces as substantially flat surfaces and a substrate that warps so that a surface thereof to be joined to the first substrate warps outward. Also provided are a semiconductor element manufacturing method, a composite substrate and a semiconductor element manufactured.

Abstract: In order to correct warpage resulting from the formation of a multilayer film, provided are a single crystal substrate which includes a heat-denatured layer provided in one of two regions including a first region and a second region obtained by bisecting the single crystal substrate in a thickness direction thereof, and which is warped convexly toward a side of a surface of the region provided with the heat-denatured layer, a manufacturing method for the single crystal substrate, a manufacturing method for a single crystal substrate with a multilayer film using the single crystal substrate, and an element manufacturing method using the manufacturing method for a single crystal substrate with a multilayer film.

Abstract: Provided are a method of manufacturing a light-emitting element by which a light-emitting element (80) is manufactured through the following steps and a light-emitting element manufactured by employing the method. A light-emitting element layer (40) is formed on one face (32T) of a monocrystalline substrate (30A) for a light-emitting element. Next, the other face (32B) of the monocrystalline substrate (30A) for a light-emitting element is polished until a state where a vertical hole (34A) penetrates the monocrystalline substrate (30A) for a light-emitting element in its thickness direction is established. Next, a conductive material is filled into the vertical hole (34B) from the side of the vertical hole (34B) closer to an opening (36B) in the other face (32B) to form a conductive portion (50) that is continuous from a side closer to the light-emitting element layer (40) to the opening (36B) in the other face (32B).

Abstract: Provided is a composite substrate manufacturing method, including at least: a first raw board deforming step of preparing a first substrate by deforming a first raw board having at least one surface as a minor surface into a state in which the minor surface warps outward; and a joining step of joining, after the first raw board deforming step, a protruding surface of the first substrate and one surface of a second substrate to each other, thereby manufacturing a composite substrate including the first substrate and the second substrate, in which the second substrate is any one substrate selected from a substrate having both surfaces as substantially flat surfaces and a substrate that warps so that a surface thereof to be joined to the first substrate warps outward. Also provided are a semiconductor element manufacturing method, a composite substrate and a semiconductor element manufactured.

Abstract: Provided are a method of manufacturing a light-emitting element by which a light-emitting element (80) is manufactured through the following steps and a light-emitting element manufactured by employing the method. A light-emitting element layer (40) is formed on one face (32T) of a monocrystalline substrate (30A) for a light-emitting element. Next, the other face (32B) of the monocrystalline substrate (30A) for a light-emitting element is polished until a state where a vertical hole (34A) penetrates the monocrystalline substrate (30A) for a light-emitting element in its thickness direction is established. Next, a conductive material is filled into the vertical hole (34B) from the side of the vertical hole (34B) closer to an opening (36B) in the other face (32B) to form a conductive portion (50) that is continuous from a side closer to the light-emitting element layer (40) to the opening (36B) in the other face (32B).

Abstract: In order to correct warpage resulting from the formation of a multilayer film, provided are a single crystal substrate which includes a heat-denatured layer provided in one of two regions including a first region and a second region obtained by bisecting the single crystal substrate in a thickness direction thereof, and which is warped convexly toward a side of a surface of the region provided with the heat-denatured layer, a manufacturing method for the single crystal substrate, a manufacturing method for a single crystal substrate with a multilayer film using the single crystal substrate, and an element manufacturing method using the manufacturing method for a single crystal substrate with a multilayer film.

Abstract: Provided are an internally reformed substrate for epitaxial growth having an arbitrary warpage shape and/or an arbitrary warpage amount, an internally reformed substrate with a multilayer film using the internally reformed substrate for epitaxial growth, a semiconductor device, a bulk semiconductor substrate, and manufacturing methods therefor. The internally reformed substrate for epitaxial growth includes: a single crystal substrate; and a heat-denatured layer formed in an internal portion of the single crystal substrate by laser irradiation to the single crystal substrate.

Abstract: In order to correct warpage that occurs in formation of a multilayer film, provided are a single crystal substrate with a multilayer film, a manufacturing method therefor, and an element manufacturing method using the manufacturing method. The single crystal substrate with a multilayer film includes: a single crystal substrate (20); a multilayer film (30) including two or more layers that is formed on one surface of the single crystal substrate (20) and having a compressive stress; and a heat-denatured layer (22) provided, of two regions (20U, 20D) obtained by bisecting the single crystal substrate (20) in the thickness direction thereof, at least in the region (20D) on the side of the surface opposite to the one surface of the single crystal substrate (20) having the multilayer film (30) formed thereon.

Abstract: Provided are a crystalline film in which variations in the crystal axis angle after separation from a substrate for epitaxial growth have been eliminated, and various devices in which the properties thereof have been improved by including the crystalline film. And the crystalline film has a thickness of 300 ?m or more and 10 mm or less and reformed region pattern is formed in an internal portion of the crystalline film.

Abstract: A laser processing method for a transparent plate having a predetermined breaking line including the step of applying a pulsed laser beam to the transparent plate along the breaking line to thereby form a laser processed groove. The pulsed laser beam has an absorption wavelength to the transparent plate. The repetition frequency of the pulsed laser beam is set to 200 kHz or more and the energy density per pulse of the pulsed laser beam is set to 3.8 J/cm2 or more.