Abstract: In multimold semiconductor devices, semiconductor chips are mounted on a lead frame and bonded with wire, sealed by an inner resin, and further enclosed by an outer resin. In particular, wax to be added to the inner resin is at least one compound selected from the group consisting of ester group, fatty acid based, fatty acid metallic salt based, fatty alcohol, polyhydric alcohol, and fatty acid amide compounds. In the semiconductor devices sealed by the inner resin including wax thus defined, since the adhesion strength between the inner and outer resins can be increased, peeling resistance between the two and the moisture resistance can be improved markedly and cracks after dip soldering can be perfectly eliminated, without effecting any conventional inner resin treatment such as honing, burning, after-curing, etc.

Abstract: A semiconductor device includes a photodetector for converting an optical signal into an electric signal, and a semiconductor element comprising an optical transmissible conductive film formed through an insulating film on the main surface of a semiconductor with a photodetector, and electrically connected to a constant potential line of the semiconductor device, a wiring layer formed through an insulating film on the main surface of the semiconductor formed with the semiconductor element, an insulating film formed over the wiring layer, and an optical shielding film formed on part or whole of the semiconductor element except the photodetector on the insulating film.

Abstract: A semiconductor device is disclosed with a conductive on-chip shield film formed on its surface. The on-chip shield film is patterned in a manner substantially complementary to the pattern of the wiring layer of the semiconductor device so that the shield film does not cover portions of the semiconductor device which are covered by the wiring-pattern layer. In this manner, the on-chip shield film of the semiconductor device provides high resistance to electrostatic and electromagnetic induction while maintaining the ability of the device to withstand changes in ambient temperature.

Abstract: A photocoupler device which comprises a light-emitting element and a light-receiving element which comprises a 4-layer structure of the PNPN conductivity type, and wherein that portion of said light-receiving element where a light entered does not contribute to its operation is covered with a light-reflecting membrane.