Abstract: In a silicon carbide semiconductor device and a silicon carbide semiconductor circuit device equipped with the silicon carbide semiconductor device, a gate leak current that flows when negative voltage with respect to the potential of a source electrode is applied to the gate electrode is limited to less than 2×10?11 A and the gate leak current is limited to less than 3.7×10?6 A/m2.

Abstract: In a MOS silicon carbide semiconductor device and a silicon carbide semiconductor circuit device equipped with the silicon carbide semiconductor device, a gate leak current that flows when negative voltage with respect to the potential of the source electrode is applied to the gate electrode is limited to less than 2×10?11 A. The negative voltage applied to the gate electrode is limited to ?3V or lower relative to the potential of the source electrode.

Abstract: A second distance is longer than a first distance and a value obtained by dividing the third distance by the fourth distance is more than or equal to 0.5 and less than or equal to 0.8 when it is assumed that the first distance represents a distance between the cutting edge and the mounting surface in a direction perpendicular to the rake face, the second distance represents a distance between the mounting surface and a boundary portion between the rising portion and the flat portion in the direction perpendicular to the rake face, the third distance represents a distance between the boundary portion and a tip of the cutting edge in a direction parallel to the rake face, and the fourth distance represents a distance between the second discharging opening portion and the tip of the cutting edge in the direction parallel to the rake face.

Abstract: A screw member that has passed through a holder insertion hole and a resistor insertion hole being screwed into an internal threaded hole fixes a holder and a resistor to a bottom wall of a motor housing member. Thus, the resistor is attached to the motor housing member using the screw member that attaches the holder to the motor housing member. This reduces the space in the inverter accommodation chamber.

Abstract: A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.

Abstract: A power transmission apparatus with a centrifugal pendulum damper is realized, which can effectively suppress torque fluctuation and vibration noise of a vehicle while avoiding size increase of a centrifugal pendulum damper and deterioration of reliability of the centrifugal pendulum damper by high-speed rotation. A power transmission apparatus with a centrifugal pendulum damper includes: a centrifugal pendulum damper coupled to an input shaft through a speed-increasing mechanism configured to increase speed of rotation of the input shaft; and an engagement/disengagement mechanism capable of realizing and cutting off power transmission from the input shaft to the centrifugal pendulum damper.

Abstract: A trench gate MOSFET has at an n-type current spreading region between an n?-type drift region and a p-type base region, a first p+-type region facing a bottom of a trench, and a second p+-type region disposed between adjacent trenches. The first and the second p+-type regions extend parallel to a first direction in which the trench extends and are partially connected by a p+-type connecting portion and thus, disposed in a ladder shape when viewed from the front surface of a semiconductor substrate. The second p+-type region has at a portion of a surface on a drain side, a recessed portion that is recessed toward a source side. One or more recessed portions is provided between connection sites in the second p+-type region for connection with the p+-type connecting portions that are adjacent to each other in the first direction X.

Abstract: A forged titanium alloy material having a duplex grain structure composed of flat grains and non-flat grains, wherein the flat grains are crystal grains of prior-? grains each having an aspect ratio of more than 3 and the non-flat grains are crystal grains of prior-? grains each having an aspect ratio of 1 to 3 inclusive. The forged titanium alloy material is characterized in that the average equivalent circle diameter of the non-flat grains is 100 ?m or less, flat grains each having a thicknesswise diameter of 20 to 500 ?m are contained in an amount of 40 to 98%, non-flat grains each having a thicknesswise diameter of 10 to 150 ?m are contained in an amount of 2 to 50%, and the flat grains each having the above-mentioned thicknesswise diameter and the non-flat grains each having the above-mentioned thicknesswise diameter are contained in the total amount of 90% or more.

Abstract: A semiconductor device includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of the first conductivity type; a second semiconductor layer of a second conductivity type; a first semiconductor region of the first conductivity type; a trench; a second semiconductor region of the second conductivity type; a third semiconductor region of the second conductivity type; and a fourth semiconductor region of the first conductivity type. The second semiconductor region is selectively provided inside the first semiconductor layer, and the third semiconductor region is selectively provided inside the first semiconductor layer and contacts a bottom surface of the trench. The fourth semiconductor region is provided perpendicularly to a lengthwise direction of the trench in a plan view and is located at a depth position that is deeper than the second semiconductor region.

Abstract: To provide an information processing terminal and information processing method capable of supplying a user with information useful for selecting link information, there is provided an information processing terminal including: a request unit configured to request an information processing device to supply layout information including a plurality of pieces of link information indicating link destinations and correlated with information regarding an object based on acquisition of the information regarding the object from the object; and a display control unit configured to generate a link list image based on the layout information acquired from the information processing device and display the generated link list image on a display screen.

Abstract: To provide an information processing device and information processing method capable of presenting a plurality of pieces of link information to a user of an information processing terminal highly conveniently, there is provided an information processing device including: a link information acquisition unit configured to acquire a plurality of pieces of link information correlated with object identification information based on reception of the object identification information for identifying an object from an information processing terminal; a layout information generation unit configured to generate layout information including the plurality of pieces of acquired link information and used to generate a link list image in which information acquired from a link destination indicated by each of the plurality of pieces of link information is displayed; and a transmission control unit configured to cause the generated layout information to be transmitted to the information processing terminal.

Abstract: A second distance is longer than a first distance and a value obtained by dividing the third distance by the fourth distance is more than or equal to 0.5 and less than or equal to 0.8 when it is assumed that the first distance represents a distance between the cutting edge and the mounting surface in a direction perpendicular to the rake face, the second distance represents a distance between the mounting surface and a boundary portion between the rising portion and the flat portion in the direction perpendicular to the rake face, the third distance represents a distance between the boundary portion and a tip of the cutting edge in a direction parallel to the rake face, and the fourth distance represents a distance between the second discharging opening portion and the tip of the cutting edge in the direction parallel to the rake face.

Abstract: A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.

Abstract: In a MOS silicon carbide semiconductor device and a silicon carbide semiconductor circuit device equipped with the silicon carbide semiconductor device, a gate leak current that flows when negative voltage with respect to the potential of the source electrode is applied to the gate electrode is limited to less than 2×10?11 A. The negative voltage applied to the gate electrode is limited to ?3V or lower relative to the potential of the source electrode.

Abstract: A semiconductor device includes: a semiconductor substrate of a first conductivity type; a first semiconductor layer of the first conductivity type; a second semiconductor layer of a second conductivity type; a first semiconductor region of the first conductivity type; a trench; a second semiconductor region of the second conductivity type; a third semiconductor region of the second conductivity type; and a fourth semiconductor region of the first conductivity type. The second semiconductor region is selectively provided inside the first semiconductor layer, and the third semiconductor region is selectively provided inside the first semiconductor layer and contacts a bottom surface of the trench. The fourth semiconductor region is provided perpendicularly to a lengthwise direction of the trench in a plan view and is located at a depth position that is deeper than the second semiconductor region.

Abstract: A fuel reforming catalyst which contains an inorganic porous support, a catalytically active species, and catalyst particles including CeO2 and ZrO2 and in which the concentration of ZrO2 in the catalyst particles is higher in the vicinity of the particle surface than in the particle interior and the concentration of CeO2 in the catalyst particles is equal in the particle interior and in the vicinity of the particle surface is proposed for the purpose of providing a new fuel reforming catalyst which can effectively lower the concentration of the hydrocarbon of C2 or more in the gas which has passed through a steam reforming reaction.

Abstract: Provided is a drill having a flat-shaped drill tip and excellent in cutting edge strength and chip removability. The drill includes: a cutting edge extending in a direction at an angle ? of not less than 85° and not more than 90° with respect to a drill axis (line O-O); a flank face contiguous to the cutting edge and having a clearance angle ? of not less than 5° and not more than 10° with respect to the drill axis (line O-O); and a rake face located opposite to the flank face across the cutting edge, the cutting edge includes a recess receding in a direction parallel to the drill axis (line O-O), and the rake face includes a front clearance formed at a side of an outer periphery of the drill.

Abstract: An insulated-gate semiconductor device includes: an n+-type current spreading layer disposed on an n?-type drift layer; a p-type base region disposed on the current spreading layer; a n+-type main-electrode region arranged in an upper portion of the base region; an insulated-gate electrode structure provided in a trench; and a p+-type gate-bottom protection-region being in contact with a bottom of the trench, including a plurality of openings through which a part of the current spreading layer penetrates, being selectively buried in the current spreading layer, wherein positions of the openings cut on both sides of a central line of the trench are shifted from each other about the central line in a longitudinal direction of the trench in a planar pattern.

Abstract: A milling tool includes: a body having an outer circumferential surface formed around a central axis; a cutting insert having a rake surface, a flank surface, and a cutting edge formed by a ridgeline of the rake surface and the flank surface; and a screw attaching the cutting insert to the body. The outer circumferential surface has an insert attachment. The insert attachment portion is defined by a first seat surface continuing to the outer circumferential surface and a second seat surface continuing to the first seat surface and having a flat portion provided with a screw hole in which the screw is inserted. The cutting edge is formed of a sintered material containing at least one of cubic boron nitride and polycrystalline diamond. In a cross section perpendicular to the central axis, a first angle formed by a first direction and a second direction is an acute angle.