Patents by Inventor Keiji Kitagaito

Keiji Kitagaito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS
    Publication number: 20220262646
    Abstract: A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.
    Type: Application
    Filed: May 6, 2022
    Publication date: August 18, 2022
    Inventors: Keiji KITAGAITO, Fumiya KOBAYASHI, Maju TOMURA
  • Plasma etching method and plasma etching apparatus
    Patent number: 11355352
    Abstract: A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.
    Type: Grant
    Filed: May 29, 2020
    Date of Patent: June 7, 2022
    Assignee: Tokyo Electron Limited
    Inventors: Keiji Kitagaito, Fumiya Kobayashi, Maju Tomura
  • PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS
    Publication number: 20200294812
    Abstract: A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.
    Type: Application
    Filed: May 29, 2020
    Publication date: September 17, 2020
    Inventors: Keiji KITAGAITO, Fumiya KOBAYASHI, Maju TOMURA
  • Plasma etching method and plasma etching apparatus
    Patent number: 10707091
    Abstract: A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: July 7, 2020
    Assignee: Tokyo Electron Limited
    Inventors: Keiji Kitagaito, Fumiya Kobayashi, Maju Tomura
  • PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS
    Publication number: 20190088497
    Abstract: A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.
    Type: Application
    Filed: November 19, 2018
    Publication date: March 21, 2019
    Inventors: Keiji KITAGAITO, Fumiya KOBAYASHI, Maju TOMURA
  • Plasma etching method and plasma etching apparatus
    Patent number: 10163653
    Abstract: A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.
    Type: Grant
    Filed: May 9, 2014
    Date of Patent: December 25, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Keiji Kitagaito, Fumiya Kobayashi, Maju Tomura
  • Etching method
    Patent number: 9396962
    Abstract: An etching method can etch a region formed of silicon oxide. The etching method includes an exposing process (process (a)) of exposing a target object including the region formed of the silicon oxide to plasma of a processing gas containing a fluorocarbon gas, etching the region, and forming a deposit containing fluorocarbon on the region; and an etching process (process (b)) of etching the region with a radical of the fluorocarbon contained in the deposit. Further, in the method, the process (a) and the process (b) are alternately repeated.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: July 19, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Keiji Kitagaito, Takayuki Katsunuma, Masanobu Honda
  • PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS
    Publication number: 20160086817
    Abstract: A plasma etching method for plasma-etching an object including an etching target film and a patterned mask. The plasma etching method includes a first step of plasma-etching the etching target film using the mask, and a second step of depositing a silicon-containing film using plasma of a silicon-containing gas on at least a part of a side wall of the etching target film etched by the first step.
    Type: Application
    Filed: May 9, 2014
    Publication date: March 24, 2016
    Inventors: Keiji KITAGAITO, Fumiya KOBAYASHI, Maju TOMURA
  • ETCHING METHOD
    Publication number: 20150243522
    Abstract: An etching method can etch a region formed of silicon oxide. The etching method includes an exposing process (process (a)) of exposing a target object including the region formed of the silicon oxide to plasma of a processing gas containing a fluorocarbon gas, etching the region, and forming a deposit containing fluorocarbon on the region; and an etching process (process (b)) of etching the region with a radical of the fluorocarbon contained in the deposit. Further, in the method, the process (a) and the process (b) are alternately repeated.
    Type: Application
    Filed: February 19, 2015
    Publication date: August 27, 2015
    Inventors: Keiji Kitagaito, Takayuki Katsunuma, Masanobu Honda