Abstract: A mixer includes: a magnetoresistive effect element including a fixed magnetic layer, a free magnetic layer, and a nonmagnetic spacer layer disposed between the fixed magnetic layer and the free magnetic layer; and a magnetic field applying unit that applies a magnetic field to the free magnetic layer. The mixer is operable, when a first high-frequency signal and a second high-frequency signal as a local signal are inputted, to multiply the first high-frequency signal and the second high-frequency signal using the magnetoresistive effect element and to generate a multiplication signal. A frequency converting apparatus includes the mixer and a filter operable, when a higher frequency and a lower frequency out of frequencies of the first high-frequency signal and the second high-frequency signal are expressed as f1 and f2 respectively, to pass one out of a frequency (f1+f2) and a frequency (f1?f2) out of the multiplication signal.

Abstract: The spin transistor in accordance with the present invention comprises a magnetoresistive element having a fixed layer, a free layer, and a semiconductor layer provided between the fixed layer and free layer; a source electrode layer electrically connected to one end face in a laminating direction of the magnetoresistive element; a drain electrode layer electrically connected to the other end face in the laminating direction of the magnetoresistive element; and a gate electrode layer laterally adjacent to the semiconductor layer through a gate insulating layer provided on a side face of the semiconductor layer.

Abstract: In an air conditioner constructed to pass an air introduced into an air conditioning unit through an evaporator and a heater core both arranged in the unit, cooler pipes for the evaporator and heater pipes for the heater core are arranged to extend from the same side wall of the air conditioning unit.

Abstract: In an air conditioner constructed to pass an air introduced into an air conditioning unit through an evaporator and a heater core both arranged in the unit, cooler pipes for the evaporator and heater pipes for the heater core are arranged to extend from the same side wall of the air conditioning unit.

Abstract: A magnetic device includes: a magnetoresistive effect element having a magnetization fixed layer, a magnetization free layer, and a nonmagnetic layer sandwiched between the magnetization fixed layer and the magnetization free layer; an input terminal for feeding an AC signal to the magnetoresistive effect element in its stacking direction; and an output terminal for extracting an output voltage from the magnetoresistive effect element, wherein the nomagnetic layer includes an insulating layer portion comprising an insulating material, and a current-constricting layer portion comprising a conductive material which passes through the insulating layer portion in its film thickness direction.

Abstract: A magnetic device and a frequency analyzer are provided as those industrially utilizing a resonance phenomenon of a direction of magnetization of a magnetoresistive element. Since polarities of an alternating current i vary with time, the direction of magnetization oscillates as affected by the magnitude and frequency of the alternating current. When the frequency fF of the direction of magnetization of a free layer in the magnetoresistive element coincides with the frequency f of the alternating current flowing in the magnetoresistive element, the oscillation of the direction of magnetization resonates to increase a voltage between output terminals. A magnetic yoke applies such a magnetic field as to cause resonance, to the free layer. A direct current is used as an electric current outputted from a current control circuit and, while this direct current is swept, voltages at respective specific resonance frequencies are detected by a monitor circuit.

Abstract: The magnetic fields generated by the electric current flowing through the respective lines are pulled into a magnetic yoke whereby the magnetic fields are concentrated on a magnetoresistive element including the magnetosensitive layer. Namely, the opposite magnetic fields are brought close to each other in the magnetosensitive layer in reading of information to cancel each other efficiently.

Abstract: A magnetic storage device is provided which has significantly reduced power consumption. The magnetic storage device includes: a yoke which is arranged so as to cover part of a line extending in an arbitrary direction; and a magneto-resistive element which is arranged near the line and is capable of writing information using a field occurring from the line. The magnetic storage device is set to satisfy the equation Iw?a·R+b, where Iw is the write current necessary for the line, R is the magnetoresistance of the yoke, a (mA·H)=7.5E?11, and b (mA)=0.1.

Abstract: A magnetization direction in a magnetosensing layer (5b) is perturbed near the magnetic connection between a magnetic yoke (5) and the magnetosensing layer (5b). If the magnetization direction of a region in the magnetosensing layer (5b) facing a fixed layer which functions during read is not perturbed, reliability is improved. In this magnetometric sensor, a surface area S1 of fixed layers (43, 44) is made smaller than a surface area S2 of the magnetosensing layer (5b) so that, in the region of the magnetosensing layer (5b) facing the fixed layer, the magnetization direction is perturbed less than in the surrounding region and reliability during data read is improved.

Abstract: A magnetic storage device with a significant reduction in power consumption. The magnetic storage device includes: a yoke which is arranged to cover part of a line extending in an arbitrary direction; and a magneto-resistive element which is arranged in contact with the yoke, thereby forming a closed magnetic circuit. The magneto-resistive element is capable of writing information with a field emanating from the yoke. The magnetic storage device satisfies Iw?a·R, where R is the magnetoresistance of the yoke, Iw is the write current necessary for the line, and a (mA·H)=6E?11.

Abstract: A magnetic storage device is provided which has significantly reduced power consumption. In the magnetic storage device, a yoke is arranged so as to circumferentially surround part of a line extending in an arbitrary direction, and a magneto-resistive element to which information can be written by utilizing a magnetic field generated by the line is arranged in the vicinity of the line. In this case, the length of the magnetic path of the yoke is set to 6 ?m or less.

Abstract: A mixer includes: a magnetoresistive effect element including a fixed magnetic layer, a free magnetic layer, and a nonmagnetic spacer layer disposed between the fixed magnetic layer and the free magnetic layer; and a magnetic field applying unit that applies a magnetic field to the free magnetic layer. The mixer is operable, when a first high-frequency signal and a second high-frequency signal as a local signal are inputted, to multiply the first high-frequency signal and the second high-frequency signal using the magnetoresistive effect element and to generate a multiplication signal. A frequency converting apparatus includes the mixer and a filter operable, when a higher frequency and a lower frequency out of frequencies of the first high-frequency signal and the second high-frequency signal are expressed as f1 and f2 respectively, to pass one out of a frequency (f1+f2) and a frequency (f1-f2) out of the multiplication signal.

Abstract: A magnetic device includes: a magnetoresistive effect element having a magnetization fixed layer, a magnetization free layer, and a nonmagnetic layer sandwiched between the magnetization fixed layer and the magnetization free layer; an input terminal for feeding an AC signal to the magnetoresistive effect element in its stacking direction; and an output terminal for extracting an output voltage from the magnetoresistive effect element, wherein the nomagnetic layer includes an insulating layer portion comprising an insulating material, and a current-constricting layer portion comprising a conductive material which passes through the insulating layer portion in its film thickness direction.

Abstract: To provide a magnetic memory capable of reducing the amount of write current, even when the element size is 0.7 ?m or less. Each of storage areas has a transistor for read/write control, which is connected electrically to either one of the fixed layer and the free layer of each magneto-resistance effect element, a wiring that is electrically connected to the other one of the fixed layer and the free layer of each magneto-resistance effect element, and a magnetic yoke that surrounds the wiring and provides a magnetic field to the free layer, and the number of the transistors within each storage area is one.

Abstract: A magnetic storage cell being capable of stable writing and having little adverse influence on an adjacent magnetic storage cell, and a magnetic memory device using the magnetic storage cell, and its manufacturing method are provided. In the invention, a plurality of TMR devices (1a) (1b) each including a TMR film (S20) including a connecting portion (14) of which the magnetization direction is changed by an external magnetic field and a second magnetic layer (8) and allowing a current to flow therethrough in a direction perpendicular to a laminate surface, and a toroidal magnetic layer (4) disposed on a surface of the TMR film (S20) so that a direction along the laminate surface is an axial direction and a write bit line (5) and a write word line (6) penetrate through the toroidal magnetic layer (4) are included, and the TMR devices (1a), (1b) share a part of the toroidal magnetic layer (4) between them.

Abstract: The spin transistor in accordance with the present invention comprises a magnetoresistive element having a fixed layer, a free layer, and a semiconductor layer provided between the fixed layer and free layer; a source electrode layer electrically connected to one end face in a laminating direction of the magnetoresistive element; a drain electrode layer electrically connected to the other end face in the laminating direction of the magnetoresistive element; and a gate electrode layer laterally adjacent to the semiconductor layer through a gate insulating layer provided on a side face of the semiconductor layer.

Abstract: A magnetic storage device is provided which has significantly reduced power consumption. In the magnetic storage device, a yoke is arranged so as to circumferentially surround part of a line extending in an arbitrary direction, and a magneto-resistive element to which information can be written by utilizing a magnetic field generated by the line is arranged in the vicinity of the line. In this case, the length of the magnetic path of the yoke is set to 6 ?m or less.

Abstract: A magnetic memory capable of reducing diffusion of ferromagnetic material into semiconductor element area is provided. A magnetic memory 1 includes plural memory areas 3 disposed in two-dimension of m rows and n columns (m, n are integers of 2 or more). The magnetic memory 1 includes semiconductor layer 6 including drain area 32a and source area 32c for write transistor 32, magnetic material layer 8 including TMR element 4 and write wiring 31, and wiring layer 7 including bit wirings 13a and 13b and word wiring 14 being sandwiched between semiconductor layer 6 and magnetic material layer 8. Since wiring layer 7 is sandwiched between magnetic material layer 8 and semiconductor layer 6, the ferromagnetic material diffusing (migrates) from TMR element 4 hardly reaches to semiconductor layer 6. Thus, the diffusion of the ferromagnetic material into the drain area 32a and the source area 32c can be reduced.

Abstract: A magnetoresistance effect element is also located between second wiring and common wiring. The magnetoresistance effect element is electrically connected to the second wiring without a spin filter. When a reading current is supplied between the second wiring for supplying a reading current and the common wiring, since this is not supplied via a spin filter, no spin polarized current is supplied into the magnetoresistance effect element, so that it becomes difficult to magnetization-reverse a magnetosensitive layer. Even in a structure where, in order to improve recording density, the magnetosensitive layer is reduced in area so as to lower a writing current, no magnetization reversal occurs due to a supply of the reading current, and information can be read out without making the reading current considerably small in comparison with the writing current.

Abstract: A magnetic device and a frequency analyzer are provided as those industrially utilizing a resonance phenomenon of a direction of magnetization of a magnetoresistive element. Since polarities of an alternating current i vary with time, the direction of magnetization oscillates as affected by the magnitude and frequency of the alternating current. When the frequency fF of the direction of magnetization of a free layer in the magnetoresistive element coincides with the frequency f of the alternating current flowing in the magnetoresistive element, the oscillation of the direction of magnetization resonates to increase a voltage between output terminals. A magnetic yoke applies such a magnetic field as to cause resonance, to the free layer. A direct current is used as an electric current outputted from a current control circuit and, while this direct current is swept, voltages at respective specific resonance frequencies are detected by a monitor circuit.