Patents by Inventor Keiji Konno

Keiji Konno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12109821
    Abstract: A printing apparatus performs control so that out of N scans for printing an image in a predetermined region on a print medium, a total application amount of a reactive liquid printed by first N/2 scans and a total application amount of the reactive liquid printed by second N/2 scans may be different between a case where an application amount of the reactive liquid per unit area which corresponds to the predetermined region is a first amount and a case where the application amount of the reactive liquid per unit area is a second amount larger than the first amount.
    Type: Grant
    Filed: November 7, 2022
    Date of Patent: October 8, 2024
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Naoko Baba, Satoshi Wada, Yoshitomo Marumoto, Yuji Konno, Takeshi Yazawa, Shin Genta, Shingo Nishioka, Jumpei Jogo, Takayuki Ushiyama, Keiji Kuriyama, Serena Yoshikawa, Taichi Yokokawa, Yumi Shimokodachi
  • Patent number: 8968458
    Abstract: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a??(A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.
    Type: Grant
    Filed: March 2, 2010
    Date of Patent: March 3, 2015
    Assignee: JSR Corporation
    Inventors: Keiji Konno, Masato Tanaka, Momoko Ishii, Junichi Takahashi, Tomoki Nagai
  • Patent number: 8808446
    Abstract: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a??(A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.
    Type: Grant
    Filed: February 24, 2006
    Date of Patent: August 19, 2014
    Assignee: JSR Corporation
    Inventors: Keiji Konno, Masato Tanaka, Momoko Ishii, Junichi Takahashi, Tomoki Nagai
  • Patent number: 8263315
    Abstract: A pattern-forming method includes selectively exposing a resist layer formed using a positive-tone radiation-sensitive resin composition including a resin component and an acid generator. The resist layer is developed to form a first pattern. An uncrosslinked embedded section is formed adjacent the first the pattern using a pattern-forming resin composition including a polymer. The polymer has a carbon content higher than that of the resin component, does not include silicon atom in a molecule, and is crosslinkable due to an acid generated from the acid generator. The uncrosslinked embedded section is crosslinked in an area around an interface with the first pattern to form an array structure. The first pattern, a first crosslinked section, the uncrosslinked embedded section, and a second crosslinked section are repeatedly arranged in the array structure in this order. The first pattern and the uncrosslinked embedded section are removed to form a second pattern.
    Type: Grant
    Filed: June 13, 2010
    Date of Patent: September 11, 2012
    Assignee: JSR Corporation
    Inventor: Keiji Konno
  • Publication number: 20100248167
    Abstract: A pattern-forming method includes selectively exposing a resist layer formed using a positive-tone radiation-sensitive resin composition including a resin component and an acid generator. The resist layer is developed to form a first pattern. An uncrosslinked embedded section is formed adjacent the first the pattern using a pattern-forming resin composition including a polymer. The polymer has a carbon content higher than that of the resin component, does not include silicon atom in a molecule, and is crosslinkable due to an acid generated from the acid generator. The uncrosslinked embedded section is crosslinked in an area around an interface with the first pattern to form an array structure. The first pattern, a first crosslinked section, the uncrosslinked embedded section, and a second crosslinked section are repeatedly arranged in the array structure in this order. The first pattern and the uncrosslinked embedded section are removed to form a second pattern.
    Type: Application
    Filed: June 13, 2010
    Publication date: September 30, 2010
    Applicant: JSR Corporation
    Inventor: Keiji KONNO
  • Publication number: 20100178620
    Abstract: A method for forming an inverted pattern includes forming a photoresist pattern on a substrate, filling a space formed by the photoresist pattern with a resin composition including a polysiloxane and a solvent, and removing the photoresist pattern to form an inverted pattern. The resin composition includes (A) a polysiloxane obtained by hydrolysis and condensation of two types of hydrolysable silane compounds having a specific structure, and (B) an organic solvent containing an alcohol or ether having a specific structure.
    Type: Application
    Filed: November 24, 2009
    Publication date: July 15, 2010
    Applicant: JSR Corporation
    Inventors: Satoshi DEI, Kyoyu Yasuda, Koichi Hasegawa, Fumihiro Toyokawa, Masato Tanaka, Keiji Konno
  • Publication number: 20100151384
    Abstract: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi (OR3)4-a??(A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.
    Type: Application
    Filed: March 2, 2010
    Publication date: June 17, 2010
    Applicant: JSR CORPORATION
    Inventors: Keiji Konno, Masato Tanaka, Momoko Ishii, Junichi Takahashi, Tomoki Nagai
  • Patent number: 7709182
    Abstract: An antireflection film-forming composition which has excellent applicability, is significantly inhibited from generating ultrafine microbubbles, gives an antireflection film capable of sufficiently reducing the standing-wave effect, and has excellent solubility in water and an alkaline developing solution. The antireflection film-forming composition contains: (A) a copolymer (salt) of a sulfonic acid group-containing acrylamide derivative represented by, e.g., 2-(meth)acrylamido-2-methylpropanesulfonic acid and a fluoroalkyl group-containing acrylic acid ester derivative represented by, e.g., 2,2,3,3,3-pentafluoropropyl (meth)acrylate; and (B) a surfactant whose 0.1 wt. % aqueous solution has a surface tension as measured at 25° C. of 45 mN/m or lower.
    Type: Grant
    Filed: November 28, 2005
    Date of Patent: May 4, 2010
    Assignee: JSR Corporation
    Inventors: Nakaatsu Yoshimura, Keiji Konno
  • Patent number: 7514205
    Abstract: An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein R1 and R2 represent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.
    Type: Grant
    Filed: March 16, 2006
    Date of Patent: April 7, 2009
    Assignee: JSR Corporation
    Inventors: Nakaatsu Yoshimura, Keiji Konno, Norihiro Natsume
  • Publication number: 20090050020
    Abstract: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a??(A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.
    Type: Application
    Filed: February 24, 2006
    Publication date: February 26, 2009
    Applicant: JSR CORPORATION
    Inventors: Keiji Konno, Masato Tanaka, Momoko Ishii, Junichi Takahashi, Tomoki Nagai
  • Publication number: 20080124524
    Abstract: An antireflection film-forming composition which has excellent applicability, is significantly inhibited from generating ultrafine microbubbles, gives an antireflection film capable of sufficiently reducing the standing-wave effect, and has excellent solubility in water and an alkaline developing solution. The antireflection film-forming composition contains: (A) a copolymer (salt) of a sulfonic acid group-containing acrylamide derivative represented by, e.g., 2-(meth)acrylamido-2-methylpropanesulfonic acid and a fluoroalkyl group-containing acrylic acid ester derivative represented by, e.g., 2,2,3,3,3-pentafluoropropyl (meth)acrylate; and (B) a surfactant whose 0.1 wt. % aqueous solution has a surface tension as measured at 25° C. of 45 mN/m or lower.
    Type: Application
    Filed: November 28, 2005
    Publication date: May 29, 2008
    Inventors: Nakaatsu Yoshimura, Keiji Konno
  • Publication number: 20060223008
    Abstract: An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein R1 and R2 represent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.
    Type: Application
    Filed: March 16, 2006
    Publication date: October 5, 2006
    Inventors: Nakaatsu Yoshimura, Keiji Konno, Norihiro Natsume
  • Patent number: 7037994
    Abstract: Novel compounds acetoxymethylacenaphthylene and hydroxymethylacenaphthyleneare disclosed. A polymer prepared from these novel compounds containing a structural unit of the formula (3), wherein R1 is a hydrogen atom and R2and R3 individually represent a monovalent atom or a monovalent organic group is also disclosed. The polymer is suitable as a component for an antireflection film-forming composition exhibiting a high antireflection effect and not causing intermixing with a resist film.
    Type: Grant
    Filed: July 23, 2003
    Date of Patent: May 2, 2006
    Assignee: JSR Corporation
    Inventors: Hikaru Sugita, Keiji Konno, Masato Tanaka, Tsutomu Shimokawa
  • Patent number: 6787289
    Abstract: A radiation sensitive refractive index changing composition whose refractive index of a material is changed by a simple method, whose changed refractive index difference is sufficiently large, and which can provide a stable refractive index pattern and a stable optical material regardless of their use conditions. The radiation sensitive refractive index changing composition comprises (A) a polymerizable compound, (B) a non-polymerizable compound having a lower refractive index than the polymer of the polymerizable compound (A), and (C) a radiation sensitive polymerization initiator.
    Type: Grant
    Filed: December 19, 2002
    Date of Patent: September 7, 2004
    Assignee: JSR Corporation
    Inventors: Kenji Yamada, Nobuo Bessho, Atsushi Kumano, Keiji Konno
  • Publication number: 20040034155
    Abstract: Novel compounds acetoxymethylacenaphthylene and hydroxymethylacenaphthyleneare disclosed.
    Type: Application
    Filed: July 23, 2003
    Publication date: February 19, 2004
    Inventors: Hikaru Sugita, Keiji Konno, Masato Tanaka, Tsutomu Shimokawa
  • Publication number: 20030139486
    Abstract: A radiation sensitive refractive index changing composition whose refractive index of a material is changed by a simple method, whose changed refractive index difference is sufficiently large, and which can provide a stable refractive index pattern and a stable optical material regardless of their use conditions.
    Type: Application
    Filed: December 19, 2002
    Publication date: July 24, 2003
    Applicant: JSR CORPORATION
    Inventors: Kenji Yamada, Nobuo Bessho, Atsushi Kumano, Keiji Konno
  • Patent number: 6410150
    Abstract: A polyorganosiloxane-based composition for film formation which gives a film having low dielectric constant and high modulus of elasticity and useful as an interlayer insulating film in semiconductor devices and the like.
    Type: Grant
    Filed: September 27, 2000
    Date of Patent: June 25, 2002
    Assignee: JSR Corporation
    Inventors: Takahiko Kurosawa, Eiji Hayashi, Seo Youngsoon, Keiji Konno, Atsushi Shiota, Kinji Yamada
  • Patent number: 6406794
    Abstract: A film-forming composition comprising: (A) at least one silane compound selected from the group consisting of a compound shown by the following formula (1), a compound shown by the following formula (2), and a compound shown by the following formula (3) and a hydrolysis condensate of these compounds: R2R3Si(OR1)2  (1) R2Si(OR1)3  (2) Si(OR1)4  (3) wherein R1, R2, and R3 individually represent a monovalent organic group, (B) a polyether shown by the formula (PEO)p—(PPO)q—(PEO)r, wherein PEO represents a polyethylene oxide unit, PPO represents a polypropylene oxide unit, p is a number of 2-200, q is a number of 20-80, and r is a number of 2-200, and (C) an organic solvent.
    Type: Grant
    Filed: February 8, 2001
    Date of Patent: June 18, 2002
    Assignee: JSR Corporation
    Inventors: Atsushi Shiota, Takahiko Kurosawa, Eiji Hayashi, Makoto Sugiura, Toshiyuki Akiike, Keiji Konno, Tadahiro Shiba, Kohei Goto, Kinji Yamada
  • Patent number: 6300465
    Abstract: The present invention is a process for producing a phenylene-containing polymer in the presence of a catalyst system containing a transition metal compound, and a film-forming material comprising the phenylene-containing polymer.
    Type: Grant
    Filed: July 30, 1999
    Date of Patent: October 9, 2001
    Assignee: JSR Corporation
    Inventors: Toshiyuki Akiike, Tadahiro Shiba, Keiji Konno, Igor Rozhanskii, Kohei Goto
  • Patent number: 4406711
    Abstract: A method for the production of a homogeneous steel with reduced segregation of its ingredients by providing a continuous steel cast or steel ingot, the steel consisting of C.ltoreq.1.0%, Si.ltoreq.1.0% and Mn=0.2-3.0% plus one or more than two elements consisting of V.ltoreq.0.2%, Nb.ltoreq.0.2%, Mo.ltoreq.1.0%, Cu.ltoreq.2.0%, Cr.ltoreq.2.0%, Ni.ltoreq.3.0%, B.ltoreq.0.002%, Ti.ltoreq.0.1%, Al.ltoreq.0.1%, and Ca.ltoreq.0.01%, and the balance Fe and other unavoidable impurities, all percentages being by weight, subjecting the steel casting to a primary hot working at more than 20% reduction of area at an austenitic temperature range of less than 1200.degree. C. or at a temperature in the range from the Ar.sub.1 temperature to the Ac.sub.3 temperature in which two phases of austenite and ferrite coexist, and then to a soaking step wherein the core temperature of the steel casting stays at 1000.degree. C. or higher for a period of 30 minutes or longer.
    Type: Grant
    Filed: October 26, 1981
    Date of Patent: September 27, 1983
    Assignee: Nippon Steel Corporation
    Inventors: Michihiko Nagumo, Takeshi Kubota, Keiji Konno