Patents by Inventor Keiji Konno
Keiji Konno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12109821Abstract: A printing apparatus performs control so that out of N scans for printing an image in a predetermined region on a print medium, a total application amount of a reactive liquid printed by first N/2 scans and a total application amount of the reactive liquid printed by second N/2 scans may be different between a case where an application amount of the reactive liquid per unit area which corresponds to the predetermined region is a first amount and a case where the application amount of the reactive liquid per unit area is a second amount larger than the first amount.Type: GrantFiled: November 7, 2022Date of Patent: October 8, 2024Assignee: CANON KABUSHIKI KAISHAInventors: Naoko Baba, Satoshi Wada, Yoshitomo Marumoto, Yuji Konno, Takeshi Yazawa, Shin Genta, Shingo Nishioka, Jumpei Jogo, Takayuki Ushiyama, Keiji Kuriyama, Serena Yoshikawa, Taichi Yokokawa, Yumi Shimokodachi
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Patent number: 8968458Abstract: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a??(A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.Type: GrantFiled: March 2, 2010Date of Patent: March 3, 2015Assignee: JSR CorporationInventors: Keiji Konno, Masato Tanaka, Momoko Ishii, Junichi Takahashi, Tomoki Nagai
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Patent number: 8808446Abstract: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a??(A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.Type: GrantFiled: February 24, 2006Date of Patent: August 19, 2014Assignee: JSR CorporationInventors: Keiji Konno, Masato Tanaka, Momoko Ishii, Junichi Takahashi, Tomoki Nagai
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Patent number: 8263315Abstract: A pattern-forming method includes selectively exposing a resist layer formed using a positive-tone radiation-sensitive resin composition including a resin component and an acid generator. The resist layer is developed to form a first pattern. An uncrosslinked embedded section is formed adjacent the first the pattern using a pattern-forming resin composition including a polymer. The polymer has a carbon content higher than that of the resin component, does not include silicon atom in a molecule, and is crosslinkable due to an acid generated from the acid generator. The uncrosslinked embedded section is crosslinked in an area around an interface with the first pattern to form an array structure. The first pattern, a first crosslinked section, the uncrosslinked embedded section, and a second crosslinked section are repeatedly arranged in the array structure in this order. The first pattern and the uncrosslinked embedded section are removed to form a second pattern.Type: GrantFiled: June 13, 2010Date of Patent: September 11, 2012Assignee: JSR CorporationInventor: Keiji Konno
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Publication number: 20100248167Abstract: A pattern-forming method includes selectively exposing a resist layer formed using a positive-tone radiation-sensitive resin composition including a resin component and an acid generator. The resist layer is developed to form a first pattern. An uncrosslinked embedded section is formed adjacent the first the pattern using a pattern-forming resin composition including a polymer. The polymer has a carbon content higher than that of the resin component, does not include silicon atom in a molecule, and is crosslinkable due to an acid generated from the acid generator. The uncrosslinked embedded section is crosslinked in an area around an interface with the first pattern to form an array structure. The first pattern, a first crosslinked section, the uncrosslinked embedded section, and a second crosslinked section are repeatedly arranged in the array structure in this order. The first pattern and the uncrosslinked embedded section are removed to form a second pattern.Type: ApplicationFiled: June 13, 2010Publication date: September 30, 2010Applicant: JSR CorporationInventor: Keiji KONNO
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Publication number: 20100178620Abstract: A method for forming an inverted pattern includes forming a photoresist pattern on a substrate, filling a space formed by the photoresist pattern with a resin composition including a polysiloxane and a solvent, and removing the photoresist pattern to form an inverted pattern. The resin composition includes (A) a polysiloxane obtained by hydrolysis and condensation of two types of hydrolysable silane compounds having a specific structure, and (B) an organic solvent containing an alcohol or ether having a specific structure.Type: ApplicationFiled: November 24, 2009Publication date: July 15, 2010Applicant: JSR CorporationInventors: Satoshi DEI, Kyoyu Yasuda, Koichi Hasegawa, Fumihiro Toyokawa, Masato Tanaka, Keiji Konno
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Publication number: 20100151384Abstract: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen asking during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi (OR3)4-a??(A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.Type: ApplicationFiled: March 2, 2010Publication date: June 17, 2010Applicant: JSR CORPORATIONInventors: Keiji Konno, Masato Tanaka, Momoko Ishii, Junichi Takahashi, Tomoki Nagai
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Patent number: 7709182Abstract: An antireflection film-forming composition which has excellent applicability, is significantly inhibited from generating ultrafine microbubbles, gives an antireflection film capable of sufficiently reducing the standing-wave effect, and has excellent solubility in water and an alkaline developing solution. The antireflection film-forming composition contains: (A) a copolymer (salt) of a sulfonic acid group-containing acrylamide derivative represented by, e.g., 2-(meth)acrylamido-2-methylpropanesulfonic acid and a fluoroalkyl group-containing acrylic acid ester derivative represented by, e.g., 2,2,3,3,3-pentafluoropropyl (meth)acrylate; and (B) a surfactant whose 0.1 wt. % aqueous solution has a surface tension as measured at 25° C. of 45 mN/m or lower.Type: GrantFiled: November 28, 2005Date of Patent: May 4, 2010Assignee: JSR CorporationInventors: Nakaatsu Yoshimura, Keiji Konno
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Patent number: 7514205Abstract: An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein R1 and R2 represent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.Type: GrantFiled: March 16, 2006Date of Patent: April 7, 2009Assignee: JSR CorporationInventors: Nakaatsu Yoshimura, Keiji Konno, Norihiro Natsume
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Publication number: 20090050020Abstract: A composition for a resist underlayer film is provided. The composition has excellent storage stability and can form a resist underlayer film which has excellent adhesion to a resist film, can improve reproducibility of a resist pattern and is resistant to an alkaline liquid used in development and to oxygen ashing during the removal of a resist. The composition comprises a hydrolyzate and/or a condensate of a silane compound of the following formula (A), R1bR2cSi(OR3)4-a??(A) wherein R1 is a monovalent organic group having at least one unsaturated bond, R2 individually represents a hydrogen atom, a halogen atom or a monovalent organic group, R3 individually represents a monovalent organic group, R1 is a group other than OR3, a is an integer of 1 to 3, b is an integer of 1 to 3, and c is an integer of 0 to 2, provided that a=b+c.Type: ApplicationFiled: February 24, 2006Publication date: February 26, 2009Applicant: JSR CORPORATIONInventors: Keiji Konno, Masato Tanaka, Momoko Ishii, Junichi Takahashi, Tomoki Nagai
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Publication number: 20080124524Abstract: An antireflection film-forming composition which has excellent applicability, is significantly inhibited from generating ultrafine microbubbles, gives an antireflection film capable of sufficiently reducing the standing-wave effect, and has excellent solubility in water and an alkaline developing solution. The antireflection film-forming composition contains: (A) a copolymer (salt) of a sulfonic acid group-containing acrylamide derivative represented by, e.g., 2-(meth)acrylamido-2-methylpropanesulfonic acid and a fluoroalkyl group-containing acrylic acid ester derivative represented by, e.g., 2,2,3,3,3-pentafluoropropyl (meth)acrylate; and (B) a surfactant whose 0.1 wt. % aqueous solution has a surface tension as measured at 25° C. of 45 mN/m or lower.Type: ApplicationFiled: November 28, 2005Publication date: May 29, 2008Inventors: Nakaatsu Yoshimura, Keiji Konno
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Publication number: 20060223008Abstract: An antireflection film-forming composition having excellent coatability, capable of significantly inhibiting production of fine microbubbles and capable of forming an antireflection film with a sufficiently decreased standing-wave effect, and having excellent solubility in water and alkaline developers is provided. The composition comprises a polymer having at least one polymerization unit with a hydroxyl group-containing organic group on the side chain, preferably a copolymer having at least one recurring unit of the following formula (2) and/or at least one recurring unit of the following formula (3) and at least one recurring unit of the following formula (4), and/or a salt thereof: wherein R1 and R2 represent a hydrogen atom, a fluorine atom, or a monovalent organic group, m is an integer of 1-20, and A represents a divalent coupling means.Type: ApplicationFiled: March 16, 2006Publication date: October 5, 2006Inventors: Nakaatsu Yoshimura, Keiji Konno, Norihiro Natsume
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Patent number: 7037994Abstract: Novel compounds acetoxymethylacenaphthylene and hydroxymethylacenaphthyleneare disclosed. A polymer prepared from these novel compounds containing a structural unit of the formula (3), wherein R1 is a hydrogen atom and R2and R3 individually represent a monovalent atom or a monovalent organic group is also disclosed. The polymer is suitable as a component for an antireflection film-forming composition exhibiting a high antireflection effect and not causing intermixing with a resist film.Type: GrantFiled: July 23, 2003Date of Patent: May 2, 2006Assignee: JSR CorporationInventors: Hikaru Sugita, Keiji Konno, Masato Tanaka, Tsutomu Shimokawa
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Patent number: 6787289Abstract: A radiation sensitive refractive index changing composition whose refractive index of a material is changed by a simple method, whose changed refractive index difference is sufficiently large, and which can provide a stable refractive index pattern and a stable optical material regardless of their use conditions. The radiation sensitive refractive index changing composition comprises (A) a polymerizable compound, (B) a non-polymerizable compound having a lower refractive index than the polymer of the polymerizable compound (A), and (C) a radiation sensitive polymerization initiator.Type: GrantFiled: December 19, 2002Date of Patent: September 7, 2004Assignee: JSR CorporationInventors: Kenji Yamada, Nobuo Bessho, Atsushi Kumano, Keiji Konno
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Publication number: 20040034155Abstract: Novel compounds acetoxymethylacenaphthylene and hydroxymethylacenaphthyleneare disclosed.Type: ApplicationFiled: July 23, 2003Publication date: February 19, 2004Inventors: Hikaru Sugita, Keiji Konno, Masato Tanaka, Tsutomu Shimokawa
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Publication number: 20030139486Abstract: A radiation sensitive refractive index changing composition whose refractive index of a material is changed by a simple method, whose changed refractive index difference is sufficiently large, and which can provide a stable refractive index pattern and a stable optical material regardless of their use conditions.Type: ApplicationFiled: December 19, 2002Publication date: July 24, 2003Applicant: JSR CORPORATIONInventors: Kenji Yamada, Nobuo Bessho, Atsushi Kumano, Keiji Konno
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Patent number: 6410150Abstract: A polyorganosiloxane-based composition for film formation which gives a film having low dielectric constant and high modulus of elasticity and useful as an interlayer insulating film in semiconductor devices and the like.Type: GrantFiled: September 27, 2000Date of Patent: June 25, 2002Assignee: JSR CorporationInventors: Takahiko Kurosawa, Eiji Hayashi, Seo Youngsoon, Keiji Konno, Atsushi Shiota, Kinji Yamada
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Patent number: 6406794Abstract: A film-forming composition comprising: (A) at least one silane compound selected from the group consisting of a compound shown by the following formula (1), a compound shown by the following formula (2), and a compound shown by the following formula (3) and a hydrolysis condensate of these compounds: R2R3Si(OR1)2 (1) R2Si(OR1)3 (2) Si(OR1)4 (3) wherein R1, R2, and R3 individually represent a monovalent organic group, (B) a polyether shown by the formula (PEO)p—(PPO)q—(PEO)r, wherein PEO represents a polyethylene oxide unit, PPO represents a polypropylene oxide unit, p is a number of 2-200, q is a number of 20-80, and r is a number of 2-200, and (C) an organic solvent.Type: GrantFiled: February 8, 2001Date of Patent: June 18, 2002Assignee: JSR CorporationInventors: Atsushi Shiota, Takahiko Kurosawa, Eiji Hayashi, Makoto Sugiura, Toshiyuki Akiike, Keiji Konno, Tadahiro Shiba, Kohei Goto, Kinji Yamada
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Patent number: 6300465Abstract: The present invention is a process for producing a phenylene-containing polymer in the presence of a catalyst system containing a transition metal compound, and a film-forming material comprising the phenylene-containing polymer.Type: GrantFiled: July 30, 1999Date of Patent: October 9, 2001Assignee: JSR CorporationInventors: Toshiyuki Akiike, Tadahiro Shiba, Keiji Konno, Igor Rozhanskii, Kohei Goto
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Patent number: 4406711Abstract: A method for the production of a homogeneous steel with reduced segregation of its ingredients by providing a continuous steel cast or steel ingot, the steel consisting of C.ltoreq.1.0%, Si.ltoreq.1.0% and Mn=0.2-3.0% plus one or more than two elements consisting of V.ltoreq.0.2%, Nb.ltoreq.0.2%, Mo.ltoreq.1.0%, Cu.ltoreq.2.0%, Cr.ltoreq.2.0%, Ni.ltoreq.3.0%, B.ltoreq.0.002%, Ti.ltoreq.0.1%, Al.ltoreq.0.1%, and Ca.ltoreq.0.01%, and the balance Fe and other unavoidable impurities, all percentages being by weight, subjecting the steel casting to a primary hot working at more than 20% reduction of area at an austenitic temperature range of less than 1200.degree. C. or at a temperature in the range from the Ar.sub.1 temperature to the Ac.sub.3 temperature in which two phases of austenite and ferrite coexist, and then to a soaking step wherein the core temperature of the steel casting stays at 1000.degree. C. or higher for a period of 30 minutes or longer.Type: GrantFiled: October 26, 1981Date of Patent: September 27, 1983Assignee: Nippon Steel CorporationInventors: Michihiko Nagumo, Takeshi Kubota, Keiji Konno