Patents by Inventor Keiji Kuboyama

Keiji Kuboyama has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5265097
    Abstract: A data processor comprises a multifrequency receiver formed together with a central processor on a semiconductor substrate. The multifrequency receiver produces digital data for identifying a tone wave included in a multifrequency analog signal or produces an identification result in accordance with the condition or signal issued by the central processor. The multifrequency receiver is thereby operative to deal with tone waves which are flexible in type and input analog signals which are flexible in their frequency band, and has increased latitude of choice for the operational characteristics and function such as the number of sampling periods of input analog signals and the discrimination accuracy.
    Type: Grant
    Filed: April 22, 1992
    Date of Patent: November 23, 1993
    Assignee: Hitachi, Ltd.
    Inventors: Kenzo Funatsu, Takashi Ito, Naoki Yashiki, Chiaki Kubomura, Keiji Kuboyama
  • Patent number: 4539178
    Abstract: An indium-antimony complex crystalline semiconductor consisting essentially of crystals of an indium-antimony compound and crystals of indium alone is disclosed. The atomic ratio of the total indium content to the antimony content in the semiconductor is in the range of from 1.1/1 to 1.7/1. A process for producing such semiconductor is also disclosed. In the process, the vapors of indium and antimony are deposited on a substrate in such a manner that the arrival rate ratio of indium to antimony is controlled to be within the range of from 1.1/1 to 1.7/1.
    Type: Grant
    Filed: June 14, 1984
    Date of Patent: September 3, 1985
    Assignee: Asahi Kasei Kogyo Kabushiki Kaisha
    Inventors: Keiji Kuboyama, Takeki Matsui, Takeo Kimura
  • Patent number: 4468415
    Abstract: An indium-antimony complex crystalline semiconductor consisting essentially of crystals of an indium-antimony compound and crystals of indium alone is disclosed. The atomic ratio of the total indium content to the antimony content in the semiconductor is in the range of from 1.1/1 to 1.7/1. A process for producing such semiconductor is also disclosed. In the process, the vapors of indium and antimony are deposited on a substrate in such a manner that the arrival rate ratio of indium to antimony is controlled to be within the range of from 1.1/1 to 1.7/1.
    Type: Grant
    Filed: March 25, 1982
    Date of Patent: August 28, 1984
    Assignee: Asahi Kasei Kogyo Kabushiki Kaisha
    Inventors: Keiji Kuboyama, Takeki Matsui, Takeo Kimura