Abstract: Desirably, a Schottky barrier semiconductor diode has low forward direction rising voltage and high inverse direction yield voltage. A semiconductor device is provided with a first metal producing a low Schottky barrier and a second metal producing a high Schottky barrier. The forward direction rising voltage is reduced on account of the first metal. The inverse direction yield voltage, which is decreased due to the lowered forward rising voltage, is compensated for upon linking of depletion regions generated by forming the PN junction under the first metal layer and not under the second metal layer. As a result, a high inverse yield voltage is realized.

Abstract: An article holding apparatus includes a pair of sliding plates selectively movable toward or away from each other while being maintained parallel to each other. A distance between the sliding plates is adjustable. Suction pads are provided on inner surfaces of the sliding plates respectively. The suction pads may include first suction pads for holding a large article and second suction pads for holding a small article. Sensor elements may be mounted on the plates to sense whether a large or a small article is present to be handled thereby.