Abstract: An imaging device of an embodiment of the present disclosure includes: a pixel array part in which a plurality of pixels is disposed in a row direction and a column direction; a photoelectric conversion layer including a compound semiconductor; and an optical member in which a first refractive index portion and a second refractive index portion having mutually different refractive indices are disposed alternately from a central part to an outer peripheral part. The optical member is disposed on side of a light entering surface of the photoelectric conversion layer to straddle the plurality of pixels adjacent at least in the row direction or the column direction.

Abstract: An imaging device of an embodiment of the present disclosure includes: a pixel array part in which a plurality of pixels is disposed in a row direction and a column direction; a photoelectric conversion layer including a compound semiconductor; and an optical member in which a first refractive index portion and a second refractive index portion having mutually different refractive indices are disposed alternately from a central part to an outer peripheral part. The optical member is disposed on side of a light entering surface of the photoelectric conversion layer to straddle the plurality of pixels adjacent at least in the row direction or the column direction.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A solid-state imaging device includes an image sensor chip and a signal processing chip, which are electrically connected. A low thermal conductivity region is positioned between the image sensor chip and the signal processing chip. The low thermal conductivity region is configured to insulate the image sensor chip from heat, which may be generated by the signal processing chip.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A solid-state image sensing apparatus includes a solid-state image sensing device, signal processing circuit device, and a multi-layer wiring package. The solid-state image sensing device has a pixel in an image sensing area thereof. The pixel receives incident light and generate a signal electric charge. The signal processing circuit device is arranged to face the image sensing area and applies signal processing to a signal output from the solid-state image sensing device. The multi-layer wiring package has wiring layers, the solid-state image sensing device, and the signal processing circuit device. Each of the wiring layers is laminated via an insulator. The multi-layer wiring package is formed such that a first wiring layer provided between the solid-state image sensing device and the signal processing circuit device has a greater thickness than second wiring layers and has heat conductivity higher than or equal to heat conductivity of the second wiring layers.

Abstract: A solid-state imaging device includes an image sensor chip and a signal processing chip, which are electrically connected. A low thermal conductivity region is positioned between the image sensor chip and the signal processing chip. The low thermal conductivity region is configured to insulate the image sensor chip from heat, which may be generated by the signal processing chip.

Abstract: A hollow package includes a package body composed of an epoxy resin having a low thermal coefficient of linear expansion, wherein the package body includes a recess for receiving an electronic component, and leads, for extracting electrodes of the electronic component, extending from the inner surface of the recess, via the upper surface of the package body, to the peripheral surface, and a transparent sealing plate bonded onto the upper surface of the package body with an ultraviolet-curable resin.

Abstract: A hollow package includes a package body composed of an epoxy resin having a low thermal coefficient of linear expansion, wherein the package body includes a recess for receiving an electronic component, and leads, for extracting electrodes of the electronic component, extending from the inner surface of the recess, via the upper surface of the package body, to the peripheral surface, and a transparent sealing plate bonded onto the upper surface of the package body with an ultraviolet-curable resin.

Abstract: A hollow package includes a package body composed of an epoxy resin having a low thermal coefficient of linear expansion, wherein the package body includes a recess for receiving an electronic component, and leads, for extracting electrodes of the electronic component, extending from the inner surface of the recess, via the upper surface of the package body, to the peripheral surface, and a transparent sealing plate bonded onto the upper surface of the package body with an ultraviolet-curable resin.