Abstract: A CAE analysis method is provided in which a computer is caused to perform modeling in which: a model formed by solid elements is applied for each of the plurality of members, based on given data representing a region to be analyzed of the plurality of members; a model formed by a shell element is applied for each weld joint formed between two members of the plurality of members, based on given data representing a region to be analyzed of the weld joints; and the shell element applied as the model for each weld joint is arranged inside a dihedral between welded surfaces of the two members, and is coupled to the solid elements applied as the model for each of the two members through internode connection such that each solid elements applied for the two members is coupled via rigid elements or beam elements to the shell element respectively.

Abstract: A method of forming a metal plug, which method has the steps of depositing a metal film on an insulating film after formation of a contact opening in the insulating film and etching the metal film to bury the metal film in the contact opening, includes the steps of forming on the metal film either a smooth tungsten film formed by bias-sputtering, a smooth silicon nitride film formed by competitive reactions as etching and deposition reactions, a smooth resist film or a smoothing layer constituted by an SOG or organic polymer layer on the metal film and etching back the smooth layer or smoothing layer and the metal film under conditions in which etching rates are almost equal to each other so as to smoothly bury the metal film in the contact opening.

Abstract: The present invention provides a method for forming a metallic wiring pattern, in which narrowing of a resist during patterning of a metallic film is prevented, adhesion of sputtered metallic film to the side walls of the resist is also prevented, and thereby a highly accurate metallic wiring pattern can be achieved.

Abstract: A process for dry etching a copper containing film formed on a substrate is performed by using an etching gas while heating at a temperature below 200.degree. C. The etching gas is selectable from the group consisting of a mixed gas of a N containing gas, an O containing gas, a N and O containing gas, or a mixed gas of a N containing gas, an O containing gas and a F containing gas, or a mixed gas of a N and O containing gas and a F containing gas. By this etching gas, Cu(NO.sub.3).sub.2 is formed to be sublimed.

Abstract: A method for forming a copper wiring in a semiconductor device utilizes a copper film with a pattern mask thereon. Exposed portions of the copper film are etched to form a copper wiring. An insulation film is deposited over the copper wiring, including on side walls thereof. A portion of the insulation film is removed to leave an insulation film substantially only on side walls of the copper which is thinner than before the removing. A first dielectric film is formed between the copper wiring up to a top of the pattern mask but not on top of the pattern mask in order to embed and flatten regions between the copper wiring and pattern mask so that the regions are substantially level with the top of the pattern mask. A second dielectric layer is formed on the first dielectric layer to provide a flat surface over the copper wiring and pattern mask.

Abstract: A process for dry etching a copper containing film formed on a substrate is performed by using an etching gas while heating at a temperature below 200.degree. C. The etching gas is selectable from the group consisting of a mixed gas of a N containing gas, an O containing gas, a N and O containing gas, or a mixed gas of a N containing gas, an O containing gas and a F containing gas, or a mixed gas of a N and O containing gas and a F containing gas. By this etching gas, Cu(NO.sub.3).sub.2 is formed to be sublimed.

Abstract: A metal wiring is composed of an electroconductive adhesive layer formed on the inner wall of a contact hole provided in a dielectric film and on the surface of the above mentioned dielectric film, a first metal wiring arranged on the adhesive layer and filling the contact hole, and a second metal wiring which is made of a metal which is different from that of the first metal wiring and is formed on the above mentioned first metal wiring. The first metallic film formed on the above mentioned first metal wiring is formed by, for example, the blanket tungsten-CVD method.

Abstract: A dry etching method enabling etching of a layer of a copper (Cu) based material at a wafer heating temperature lower than heretofore, and a practically useful method for detecting the end point of etching. If the Cu layer is etched using an etching gas including a compound containing chlorine (Cl) and oxygen (O) as component elements or an etching gas including a compound containing Cl and a compound containing O as component elements, respectively, the Cu layer is removed not only in the form of copper chloride CuCl.sub.x but in the form of copper oxychloride CuCl.sub.x O.sub.y, where x is 1 to 2 and y is 1 to 8. Since CuCl.sub.x O.sub.y has a vapor pressure lower than that of CuCl.sub.x, a conventional etching reaction product, it is unnecessary to heat the wafer to higher temperatures as in the conventional practice, while there is no risk of a copper oxide film being formed on the surface of the Cu layer.

Abstract: A multilayer connector is provided, in which at least a first wiring layer is formed, a second wiring layer is formed on the first wiring layer through an interlevel insulator, a contact hole is bored through the interlevel insulator at its portion in which the first and second wiring layers are connected, a coupling conductor is formed within the contact hole and the first and second wiring layers are electrically connected to each other by means of the coupling conductor. A recess portion having an opening is formed on the first wiring layer, the opening of the recess portion being increased in width from a peripheral edge of the contact hole, wherein the coupling conductor formed within the recess portion by a selective chemical vapor deposition process is formed within the contact hole of the interlevel insulator.

Abstract: A process for etching an aluminum-based film disposed on a substrate is disclosed in which two specific different gases are used. One contains a hydrogen-donating gas in a volume of 10 to 99% and serves to etch and pattern the film until the substrate exposes to view, and the other is an oxidation-imparting gas for use in protecting the resulting pattern at its side walls. Over etching is attained without pattern defects.

Abstract: A dry etching method enabling etching of a layer of a copper (Cu) based material at a wafer heating temperature lower than heretofore, and a practically useful method for detecting the end point of etching. If the Cu layer is etched using an etching gas including a compound containing chlorine (Cl) and oxygen (O) as component elements or an etching gas including a compound containing Cl and a compound containing O as component elements, respectively, the Cu layer is removed not only in the form of copper chloride CuCl.sub.x but in the form of copper oxychloride CuCl.sub.x O.sub.y, where x is 1 to 2 and y is 1 to 8. Since CuCl.sub.x O.sub.y has a vapor pressure lower than that of CuCl.sub.x, a conventional etching reaction product, it is unnecessary to heat the wafer to higher temperatures as in the conventional practice, while there is no risk of a copper oxide film being formed on the surface of the Cu layer.

Abstract: A method for dry etching enabling good anisotropic processing even at a wafer cooling temperature closer to room temperature than with conventional low temperature etching. Etching is carried out using an etching gas including a compound containing oxygen (O) as a component element and a compound containing hydrogen (H) as a component element, or using a H.sub.2 O containing gas, while the wafer is cooled to a temperature not higher than 0.degree. C. H.sub.2 O produced or present in an etching system is condensed in a quantity monistically determined by the relation between the amount of the moisture and the dew point and is deposited as ice on a wafer surface. This ice contributes to anisotropic processing by being deposited on a pattern sidewall on which ions are not bombarded in the perpendicular direction. In this manner, etching at a temperature at which ice can be deposited is enabled without regard to the combinations between the layer of a material to be etched and the etching gas.