Abstract: [Problem] To provide a plating method and apparatus which do not require preparation of a separate treatment tank for each treatment step and therefore enable the facility to be reduced in size and, further, which can reduce the amounts of use of the treatment solutions. [Solution] A plating apparatus feeding a plating solution to a treatment tank in which an electrode is arranged and plating a workpiece made of a metal so as to perform plating, the plating apparatus characterized by being provided with a plurality of pipes which are connected to an outer wall of the treatment tank and a switch valve which is provided able to rotate at an inner side of the outer wall and which has at least one feed port for making at least one treatment solution feed pipe selected from the plurality of treatment solution feed pipes communicate with the treatment tank.

Abstract: [Problem] To provide a plating method and apparatus which do not require preparation of a separate treatment tank for each treatment step and therefore enable the facility to be reduced in size and, further, which can reduce the amounts of use of the treatment solutions. [Solution] A plating apparatus feeding a plating solution to a treatment tank in which an electrode is arranged and plating a workpiece made of a metal so as to perform plating, the plating apparatus characterized by being provided with a plurality of pipes which are connected to an outer wall of the treatment tank and a switch valve which is provided able to rotate at an inner side of the outer wall and which has at least one feed port for making at least one treatment solution feed pipe selected from the plurality of treatment solution feed pipes communicate with the treatment tank.

Abstract: A semiconductor device includes: a semiconductor substrate; an aluminum electrode disposed on the surface of the substrate; a protection film disposed on the aluminum electrode and having an opening; and a metallic electrode disposed on a surface of the aluminum electrode through the opening of the protection film. The surface of the aluminum electrode includes a concavity. The concavity has an opening side and a bottom side, which is wider than the opening side. In the device, a concavity and a convexity of the metallic electrode become small.

Abstract: A semiconductor device includes a semiconductor substrate; an aluminum electrode disposed on the substrate; a protection film disposed on the aluminum electrode; an opening disposed on the protection film for exposing the aluminum electrode; and a metal electrode disposed on a surface of the aluminum electrode through the opening. The aluminum electrode includes a concavity disposed under the opening. The aluminum electrode disposed at the concavity has a thickness equal to or larger than a depth of the concavity. The surface of the aluminum electrode includes multiple concavities and multiple convexities.

Abstract: A method of plating a semiconductor wafer while maintaining a uniform thickness of the plated film, preventing the precipitation on the back surface of the wafer and preventing the contamination in the subsequent steps. In directly forming connection terminals on the aluminum electrodes on the semiconductor wafer, the non-electrolytic plating is effected in a state where the back surface of the wafer is covered with an insulator. The insulator is preferably a glass substrate which is a part constituting the product. A semiconductor type sensor exhibits improved corrosion resistance against a corrosive medium. The semiconductor type sensor has, in a semiconductor substrate, a structural portion for detecting the physical quantity or the chemical component of a corrosive medium and an electric quantity conversion element, and has pads which are the output terminals for sending the detected electric signals to an external unit, wherein the pads are protected by a precious metal.

Abstract: A semiconductor device includes a semiconductor substrate; an aluminum electrode disposed on the substrate; a protection film disposed on the aluminum electrode; an opening disposed on the protection film for exposing the aluminum electrode; and a metal electrode disposed on a surface of the aluminum electrode through the opening. The aluminum electrode includes a concavity disposed under the opening. The aluminum electrode disposed at the concavity has a thickness equal to or larger than a depth of the concavity. The surface of the aluminum electrode includes multiple concavities and multiple convexities.