Abstract: This transistor sensor includes a substrate, a channel layer provided over one surface of the substrate, and a solid electrolyte layer provided between the substrate and the channel layer or over a surface of the channel layer on an opposite side to the substrate side, in which the channel layer includes an inorganic semiconductor, the solid electrolyte layer includes an inorganic solid electrolyte, and at least a portion of either one or both of the channel layer and the solid electrolyte layer includes an exposed portion exposed to outside.

Abstract: The infrared sensor mounting member of the present invention is able to mount an infrared sensor body, which includes an insulating substrate on which heat sensitive elements and and a plurality of the terminal electrodes are formed, on a mounting substrate by fixing it at the upper portion thereof and includes: an insulating mounting member main body and a plurality of conductive terminal members that are attached to the mounting member main body with the upper end thereof being connected to the terminal electrodes while the lower end thereof being connected to the mounting substrate when the infrared sensor mounting member is mounted thereon. The terminal members are made of a material having a higher thermal conductivity than that of the mounting member main body and have terminal pin portions 7a that are laterally projected.

Abstract: Provided are an infrared sensor and an infrared sensor device that are less susceptible to effects from the casing and lead wires, can be surface-mounted, and can measure the temperature of the object to be measured in a more accurate manner. This invention has: an insulating film; a first and a second heat sensitive element provided on the insulating film; a first and a second wiring film that are respectively connected to the heat sensitive elements; an infrared reflecting film; a terminal support body, arranged on the one face; and a plurality of mounting terminals provided to the terminal support body, wherein the mounting terminals have support convex parts protruding upward, the support convex parts are connected to the corresponding first and second wiring films, and the insulating film is supported such that a gap is provided between the terminal support body and the insulating film.

Abstract: Provided is an infrared sensor which is capable of measuring a temperature of an object to be measured with high accuracy even when lead wires are connected to one side thereof. The infrared sensor includes an insulating film; a first and a second heat sensitive element which are provided on one face of the insulating film; a first and a second wiring film that are respectively connected to the first and the second heat sensitive element; an infrared reflecting film; a plurality of terminal electrodes; and a thermal resistance adjusting film which is provided on the other face of the insulating film, is in opposition to at least a portion of the longer one of the first or the second wiring film in wiring distance from the terminal electrodes, and is formed of a material with greater heat dissipation than the insulating film.

Abstract: A temperature sensor is provided that includes a pair of lead frames; a sensor portion connected to the pair of lead frames; and an insulating holding portion fixed to the pair of lead frames for holding the same. The sensor portion includes an insulating film, a thin film thermistor portion patterned on a surface of the insulating film, a pair of comb shaped electrodes having a plurality of comb portions on the thin film thermistor portion and being patterned, and a pair of pattern electrodes patterned on the surface of the insulating film with one end thereof being connected to the pair of comb shaped electrodes and the other end thereof being connected to the pair of lead frames. The lead frame has a main lead portion and a base-end-side bonding portion. Only one of the pair of lead frames has a front-end-side bonding portion.

Abstract: Provided are an infrared sensor and an infrared sensor device that are less susceptible to effects from the casing and lead wires, can be surface-mounted, and can measure the temperature of the object to be measured in a more accurate manner. This invention has: an insulating film; a first and a second heat sensitive element provided on the insulating film; a first and a second wiring film that are respectively connected to the heat sensitive elements; an infrared reflecting film; a terminal support body, arranged on the one face; and a plurality of mounting terminals provided to the terminal support body, wherein the mounting terminals have support convex parts protruding upward, the support convex parts are connected to the corresponding first and second wiring films, and the insulating film is supported such that a gap is provided between the terminal support body and the insulating film.

Abstract: Provided is an infrared sensor which is capable of measuring a temperature of an object to be measured with high accuracy even when lead wires are connected to one side thereof. The infrared sensor includes an insulating film; a first and a second heat sensitive element which are provided on one face of the insulating film; a first and a second wiring film that are respectively connected to the first and the second heat sensitive element; an infrared reflecting film; a plurality of terminal electrodes; and a thermal resistance adjusting film which is provided on the other face of the insulating film, is in opposition to at least a portion of the longer one of the first or the second wiring film in wiring distance from the terminal electrodes, and is formed of a material with greater heat dissipation than the insulating film.

Abstract: An apparatus and a method are presented for preparing a single crystal ingot of a compound semiconductor material which contains a high vapor pressure component. The apparatus includes: a furnace housing 78 housing a cylindrical hermetic vessel 20 having a ceiling plate section 22A and a bottom plate section 42. External heaters 36, 38 and 40 surrounding the hermetic vessel 20, and a vapor pressure control section which communicates hermetically with the vessel 20.

Abstract: The present invention relates to a method and apparatus for mono-crystalline growth of a dissociative compound semiconductor. The method, which is based on the Czochralski method, includes the following steps. First, a first volatile component material and second material of the dissociative compound semiconductor are prepared. The first material is placed on the bottom of an inner air-tight vessel which is contained in the outer air-tight vessel. The second material is contained in a crucible in the inner vessel. The crucible is supported by a lower shaft extending from the inside to the outside of the inner vessel. The first material is, next, heated for evaporating so as to react with the second material in the crucible. Therefore, the dissociative compound semiconductor is synthesized in the crucible. Then, a single crystal is pulled up from the melt by an upper shaft. The upper shaft extends from inside to outside of the inner vessel, thereby the single crystal is grown.

Abstract: In a single-crystal growth method disclosed herein, a melt is first prepared in a container having a cylindrical wall. The container is such that at least the inner peripheral surface of the cylindrical wall is formed of a material which is not wettable to the melt. A seed is then immersed in the melt and a single crystal rod formed on the seed is pulled in such a manner as to be coaxial with the cylindrical wall. The distance between the single crystal rod and the inner peripheral surface is set to a prescribed value G, so that the melt adjacent to the inner peripheral surface is formed into a prescribed meniscus shape. The temperature distribution at the melt surface is controlled to maintain the meniscus shape between the single crystal rod and the inner peripheral surface at an equilibrium state to thereby control the diameter of the single crystal rod.

Abstract: The present invention relates to a method and apparatus for mono-crystalline growth of a dissociative compound semiconductor. The method, which is based on the Czochralski method, includes the following steps. First, a first volatile component material and second material of the dissociative compound semiconductor are prepared. The first material is placed on the bottom of an inner air-tight vessel which is contained in an outer air-tight vessel. The second material is contained in a crucible supported in the inner vessel by a lower shaft extending from the inside to the outside of the inner vessel. The first material is, next, heated for evaporating so as to react with the second material. Therefore, the dissociative compound semiconductor is synthesized in the crucible. Then, temperature of a furnace installed on the inner vessel is adjusted so that the pressure of the gas of the first volatile component material in the inner vessel is controlled.