Abstract: With respect to a method of depositing a silicon nitride film on a surface of a substrate, the method includes depositing the silicon nitride film on the surface of the substrate by intermittently supplying trisilylamine into a processing chamber accommodating the substrate.

Abstract: A plasma processing apparatus includes: a processing container having a vertical tubular shape and an opening formed in a side wall of the processing container, the processing container configured to accommodate a plurality of substrates in multiple stages; a plasma partition wall airtightly provided on an outer wall of the processing container and configured to cover the opening and define a plasma generation space; a plasma electrode provided along the plasma partition wall; and a processing gas supplier provided outside the plasma generation space and configured to supply a plasma generation gas.

Abstract: With respect to a method of depositing a silicon nitride film on a surface of a substrate, the method includes depositing the silicon nitride film on the surface of the substrate by intermittently supplying trisilylamine into a processing chamber accommodating the substrate.

Abstract: A plasma processing apparatus includes: a processing container having a vertical tubular shape and an opening formed in a side wall of the processing container, the processing container configured to accommodate a plurality of substrates in multiple stages; a plasma partition wall airtightly provided on an outer wall of the processing container and configured to cover the opening and define a plasma generation space; a plasma electrode provided along the plasma partition wall; and a processing gas supplier provided outside the plasma generation space and configured to supply a plasma generation gas.

Abstract: A vertical heat treatment apparatus includes: a gas supply part that supplies a film forming gas into a reaction chamber; and gas distribution adjusting members arranged above and below a region in which target substrates are disposed. The gas distribution adjusting members include a first plate-shaped member with convex and concave portions and a second plate-shaped member with convex and concave portions, the first plate-shaped member and the second plate-shaped member being arranged above and below each other, and the first plate-shaped member and the second plate-shaped member being arranged above a bottom plate of a substrate holding and supporting part and below a ceiling plate of a substrate holding and supporting part. The first plate-shaped member has a first surface area and the second plate-shaped member has a second surface area different from the first surface area.

Abstract: Provided is a method of forming a silicon nitride film on an object to be processed, which includes: supplying a silicon raw material gas into a processing chamber; and supplying a nitridant gas into the processing chamber, wherein supplying the silicon raw material gas includes an initial supply stage in which the silicon raw material gas is initially supplied and a late supply stage following the initial supply stage, wherein a first internal pressure of the processing chamber defined in the initial supply stage is lower than a second internal pressure of the processing chamber defined in the late supply stage.