Patents by Inventor Keiki Nagai

Keiki Nagai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing semiconductor devices using thermal nitride films as gate insulating films
    Patent number: 6759314
    Abstract: A thermal nitride film is formed as a gate insulating film on a silicon substrate, and after a gate electrode material is formed on the insulating film, it is patterned to form gate electrodes. After processing the electrodes, part of the gate insulating film other than a portion thereof which lies under the gate electrodes is removed. Further, an insulating film (a post oxidation film) is formed on side walls and upper surfaces of the stacked gate structures and the exposed main surface of the silicon substrate by use of thermal oxidation method.
    Type: Grant
    Filed: September 26, 2000
    Date of Patent: July 6, 2004
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Wakako Moriyama, Naoki Kai, Hiroaki Hazama, Keiki Nagai, Yuji Fukazawa, Kazuo Saki, Yoshio Ozawa, Yasumasa Suizu