Abstract: Antimicrobial activity exhibited against a wide variety of plant pathogens. A functional peptide consisting of the amino acid sequence: YYGFPAFSERTRKFWRIWKGKTS (SEQ ID NO: 1) or an amino acid sequence having an identity of 85% or more with respect to the amino acid sequence, or consisting of a partial peptide thereof.

Abstract: The present document describes a nutriprotective diet comprising a nutriprotective amount of a sugar plant syrup, a sugar plant syrup extract, a sugar plant extract, or combinations thereof. The present document also describes a method of eliciting a nutriprotective effect in a subject, which comprises administering a nutriprotective amount of a nutriprotective diet according to the present invention. Also, the present document also describes a method of treating a subject with a disorder, by administering a nutriprotective amount of a nutriprotective diet according to the present invention. Also, the present document describes a process for the extraction of polyphenolic compounds from maple syrup using adsorbent materials, and the extracts obtained therefrom.

Abstract: A method for screening an active ingredient of a saltiness enhancer, the screening method including the following steps: (i) a step for determining whether a test substance is a compound capable of promoting functional expression of the TMC4 gene or TMC4 protein; and (ii) a step for selecting, as an active ingredient of a saltiness enhancer, a test substance that has been determined in step (i) to be a compound capable of promoting functional expression of the TMC4 gene or TMC4 protein.

Abstract: A method for screening an active ingredient of a saltiness enhancer, the screening method including the following steps: (i) a step for determining whether a test substance is a compound capable of promoting functional expression of the TMC4 gene or TMC4 protein; and (ii) a step for selecting, as an active ingredient of a saltiness enhancer, a test substance that has been determined in step (i) to be a compound capable of promoting functional expression of the TMC4 gene or TMC4 protein.

Abstract: A related-art optical element using an antireflection film having a layer having an uneven structure or a porous layer has involved a problem in that the performance of the antireflection film is degraded by SO2 in an exhaust gas. In view of the problem, provided are an optical element in which a positive ion spectrum of a surface of an antireflection film measured by TOF-SIMS has a peak of CmHnN+, where m represents an integer of 1 or more to 8 or less, and n represents an integer of 2 or more to 16 or less, and a method of producing the element.

Abstract: The present invention relates to an optical element including a base material, a light-shielding film, and a cured film in which an alkyd resin and a melamine resin having two or more iminomethylol groups in a molecule are condensed or in which an alkyd resin and a benzoguanamine resin having two or more iminomethylol groups in a molecule are condensed. The light-shielding film is disposed in at least a part of the periphery of the base material. The cured film is disposed on the surface of the light-shielding film.

Abstract: An optical member includes a base material and an antireflective layer on the base material wherein the antireflective layer includes a plurality of fine protrusions on a surface thereof and a support layer for supporting the protrusions, and the support layer contains boron in an amount of 7×1019 atoms/cm3 or more and 2.5×1020 atoms/cm3 or less.

Abstract: An optical member includes a base material and an antireflective layer on the base material wherein the antireflective layer includes a plurality of fine protrusions on a surface thereof and a support layer for supporting the protrusions, and the support layer contains boron in an amount of 7×1019 atoms/cm3 or more and 2.5×1020 atoms/cm3 or less.

Abstract: A magnetic memory includes: first to third terminals; a conductive layer including first to fifth regions, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, and a first nonmagnetic layer disposed between the first and the second magnetic layer; a second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, and a second nonmagnetic layer disposed between the third and the fourth magnetic layer; and a circuit flowing a write current between the first and the second terminal and between the second and the third terminal in a write operation.

Abstract: A precursor sol of aluminum oxide contains a polycondensate formed by the hydrolysis of an aluminum alkoxide or an aluminum salt, a solvent, and an organic aluminum compound having a specific structure. An optical member is produced by a process including a step of immersing an aluminum oxide film in a hot water with a temperature of 60° C. to 100° C. to form a textured structure made of aluminum oxide crystals, the aluminum oxide film being formed by feeding the precursor sol of aluminum oxide onto a base. A method for producing an optical member includes a step of immersing an aluminum oxide film in a hot water with a temperature of 60° C. to 100° C. to form a textured structure made of aluminum oxide crystals, the aluminum oxide film being formed by feeding the precursor sol of aluminum oxide onto a base.

Abstract: A memory system has a nonvolatile memory to have a memory capacity equal to or less than a memory capacity of a volatile memory, and store at least a part of data stored in the volatile memory, a first controller to refresh data in the volatile memory, and a second controller to overwrite the nonvolatile memory with data read from the volatile memory in a first period between a second period to refresh data in the volatile memory and a third period to subsequently refresh data in the volatile memory.

Abstract: A memory system has a non-volatile memory, an error corrector, an error information storage, and an access controller. The non-volatile memory comprising a plurality of memory cells. The error corrector to correct an error included in data read from the non-volatile memory. The error information storage, based on an error rate when a predetermined number or more of data is written in the non-volatile memory and read therefrom, to store first information on whether there is an error in the written data, on whether there is an error correctable by the error corrector in the written data, and on whether there is an error uncorrectable by the error corrector in the written data. The access controller, based on the first information, to control at least one of reading from or writing to the non-volatile memory.

Abstract: An optical element is provided that includes a base having a smooth surface and a rough surface on one surface thereof, an antireflection film having an irregularity structure on a surface of the antireflection film over the smooth surface of the base, and a light shielding film over the rough surface, wherein the irregularity structure of the antireflection film has an average height of 50 nm or less in an overlapping portion, in which an edge portion of the antireflection film and an edge portion of the light shielding film overlap each other over the smooth surface.

Abstract: A magnetic memory includes: first to fourth wirings; first and second terminals; a first conductive layer including first to third regions, the second region being between the first region and the third region, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; a first magnetoresistive element including a first and a second magnetic layer, and a first nonmagnetic layer disposed between the first and the magnetic layer; a first transistor including a third terminal electrically connected to the first magnetic layer, a fourth terminal electrically connected to the third wiring, and a first control terminal electrically connected to the first wiring; and a second transistor including a fifth terminal electrically connected to the first terminal, a sixth terminal electrically connected to the second wiring, and a second control terminal electrically connected to the first wiring.

Abstract: A related-art optical element using an antireflection film having a layer having an uneven structure or a porous layer has involved a problem in that the performance of the antireflection film is degraded by SO2 in an exhaust gas. In view of the problem, provided are an optical element in which a positive ion spectrum of a surface of an antireflection film measured by TOF-SIMS has a peak of CmHnN+, where m represents an integer of 1 or more to 8 or less, and n represents an integer of 2 or more to 16 or less, and a method of producing the element.

Abstract: The present invention relates to an optical element including a base material, a light-shielding film, and a cured film in which an alkyd resin and a melamine resin having two or more iminomethylol groups in a molecule are condensed or in which an alkyd resin and a benzoguanamine resin having two or more iminomethylol groups in a molecule are condensed. The light-shielding film is disposed in at least a part of the periphery of the base material. The cured film is disposed on the surface of the light-shielding film.

Abstract: A nonvolatile semiconductor memory includes a resistance-change element having first and second terminals, a transistor having third and fourth terminals and a control terminal, the third terminal being connected to the second terminal, and a first driver electrically connected to the control terminal, applying a first potential to the control terminal in a first write operation, and applying a second potential larger than the first potential to the control terminal in a second write operation.

Abstract: According to one embodiment, a processor includes a core controlling processing data, a cache data area storing the processing data as cache data in a nonvolatile manner, a first tag area storing a tag data of the cache data in a volatile manner, a second tag area storing the tag data in a nonvolatile manner, a tag controller controlling the tag data. The tag controller determines whether the processing data is stored in the cache data area by acquiring the tag data from one of the first and second tag areas.

Abstract: The present document describes a nutriprotective diet comprising a nutriprotective amount of a sugar plant syrup, a sugar plant syrup extract, a sugar plant extract, or combinations thereof. The present document also describes a method of eliciting a nutriprotective effect in a subject, which comprises administering a nutriprotective amount of a nutriprotective diet according to the present invention. Also, the present document also describes a method of treating a subject with a disorder, by administering a nutriprotective amount of a nutriprotective diet according to the present invention. Also, the present document describes a process for the extraction of polyphenolic compounds from maple syrup using adsorbent materials, and the extracts obtained therefrom.

Abstract: A magnetic memory includes: first to third terminals; a conductive layer including first to fifth regions, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, and a first nonmagnetic layer disposed between the first and the second magnetic layer; a second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, and a second nonmagnetic layer disposed between the third and the fourth magnetic layer; and a circuit flowing a write current between the first and the second terminal and between the second and the third terminal in a write operation.