Abstract: A substrate cleaning apparatus, includes a vaporizer configured to generate water vapor, a first heating part configured to heat a nitrogen gas to a first temperature, a second heating part configured to heat the nitrogen gas to a second temperature, wherein the second temperature is higher than the first temperature, and at least one cleaning chamber connected to the vaporizer, the first heating part, and the second heating part, wherein the at least one cleaning chamber is configured so that at least one substrate is exposed to the water vapor, the nitrogen gas having the first temperature, or the nitrogen gas having the second temperature under an atmospheric pressure.

Abstract: There is provided a method of processing an oxygen-containing workpiece. The method of processing an oxygen-containing workpiece includes controlling a fluorine concentration in the oxygen-containing workpiece based on at least one of a kind of a fluorine-containing processing gas, a processing temperature and a processing pressure used for processing the oxygen-containing workpiece.

Abstract: An etching method of an oxygen-containing silicon film embedded in each recess of a substrate, which includes a plurality of recesses having different opening sizes, by supplying an etching gas to the substrate, the etching method including: adsorbing an organic amine compound gas on the oxygen-containing silicon film by supplying the organic amine compound gas to the substrate; desorbing an excess of the organic amine compound gas from the substrate; and selectively etching the oxygen-containing silicon film with respect to each recess by supplying the etching gas containing a halogen to the substrate on which the organic amine compound has been adsorbed.

Abstract: A substrate cleaning apparatus, includes a vaporizer configured to generate water vapor, a first heating part configured to heat a nitrogen gas to a first temperature, a second heating part configured to heat the nitrogen gas to a second temperature, wherein the second temperature is higher than the first temperature, and at least one cleaning chamber connected to the vaporizer, the first heating part, and the second heating part, wherein the at least one cleaning chamber is configured so that at least one substrate is exposed to the water vapor, the nitrogen gas having the first temperature, or the nitrogen gas having the second temperature under an atmospheric pressure.

Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

Abstract: There is provided a method of processing an oxygen-containing workpiece. The method of processing an oxygen-containing workpiece includes controlling a fluorine concentration in the oxygen-containing workpiece based on at least one of a kind of a fluorine-containing processing gas, a processing temperature and a processing pressure used for processing the oxygen-containing workpiece.

Abstract: A particle collecting apparatus is provided with a case, an ultrasonic generator, a gas supplying unit, a suction unit and a seal member. The case has one end, and defines a space at the one end. The ultrasonic generator is provided in the case, and generates ultrasonic waves towards the opening defined by the one end of the case. The gas supplying unit supplies gas to the space. The suction unit exhausts the space. The seal member has elasticity, and is provided at the one end so as to surround the opening.

Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

Abstract: A pipe joint comprises a first joint member of synthetic resin having an annular recessed portion in an end face thereof, and a second joint member of synthetic resin having an annular ridge on an end face thereof. The ridge is fitted in the opening of the recessed portion, with a synthetic resin gasket fitted in the recessed portion. When the pipe joint is properly tightened up, the outer surface of the ridge of the second joint member is pressed against the inner surface of the recessed portion of the first joint member with the gasket interposed therebetween in intimate contact with the surfaces approximately over the entire areas thereof.

Abstract: A pipe joint 1 comprises a first joint member 2 of synthetic resin having an annular recessed portion 7 in an end face thereof, and a second joint member 3 of synthetic resin having an annular ridge 8 on an end face thereof. The ridge 8 is fitted in the opening of the recessed portion 7, with a synthetic resin gasket 4 fitted in the recessed portion 7.

Abstract: A HMDS gas is supplied to a surface of a wafer W to perform a hydrophobic process, thereafter the wafer W is contained in an airtight container on a cassette stage, and is transferred to an analyzer provided at an external portion of a resist pattern forming apparatus. The analyzer performs mass spectrometry of the quantity of an ionic species such as CH9Si+, C3H9Si+, C3H9Osi− and the like on the surface of the wafer W using an analyzing section, for example, TOF-SIMS, whereby measuring a HMDS quantity (hexamethyldisilazane) on the surface of the wafer W. This method makes it possible to measure the HMDS quantity on the surface of the wafer W and to evaluate a hydrophobic process state with high reliability.

Abstract: A HMDS gas is supplied to a surface of a wafer W to perform a hydrophobic process, thereafter the wafer W is contained in an airtight container on a cassette stage, and is transferred to an analyzer provided at an external portion of a resist pattern forming apparatus. The analyzer performs mass spectrometry of the quantity of an ionic species such as CH9Si+, C3H9Si+, C3H9Osi− and the like on the surface of the wafer W using an analyzing section, for example, TOF-SIMS, whereby measuring a HMDS quantity (hexamethyldisilazane) on the surface of the wafer W. This method makes it possible to measure the HMDS quantity on the surface of the wafer W and to evaluate a hydrophobic process state with high reliability.