Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor element having an electrode terminal, forming a resist on the semiconductor element, the resist having a first surface facing the electrode terminal and a second surface opposite to the first surface, providing an imprint mold having a third surface and a protrusion protruding from the third surface, forming an opening in the resist by disposing the imprint mold on the second surface of the resist and inserting the protrusion into the resist, the third surface of the imprint mold facing the second surface of the resist, the protrusion being aligned with the electrode terminal, curing the resist by applying energy to the resist, widening the opening in a radial direction of the opening by causing the resist to react with a developer, and forming a bump by filling the opening with metal, in which the forming of the opening in the resist is performed in a state where a gap is provided between the second surface of the resist and

Abstract: A semiconductor device (1) includes: a semiconductor chip (2) having a first main surface and a second main surface opposite to the first main surface; a heat dissipating plate (3) opposed to the first main surface; a first electrode (5) disposed between the first main surface and the heat dissipating plate (3) so as to be electrically connected to the semiconductor chip (2); a pressure contact member (4) opposed to the second main surface; a second electrode (6) disposed between the second main surface and the pressure contact member (4) so as to be electrically connected to the semiconductor chip (2); and a pressure generating mechanism that generates a pressure for pressing the first electrode (5) into contact with the heat dissipating plate (3) and the semiconductor chip (2) and pressing the second electrode (6) into contact with the pressure contact member (4) and the semiconductor chip (2).

Abstract: A pressed-contact type semiconductor device includes a power semiconductor element, on an upper surface of which at least a first electrode is formed and on a lower surface of which at least a second electrode is formed, lead frames which face the first electrode and the second electrode of the power semiconductor element respectively, and a clip which applies a pressure to the lead frames while the power semiconductor element is sandwiched by the lead frames, wherein a metallic porous plating part is formed on a surface which faces the first electrode or the second electrode, the surface being a surface of at least one of the lead frames.

Abstract: A semiconductor device which can reduce a heat stress to a solder layer while suppressing an increase of thermal resistance is provided. A semiconductor device includes a semiconductor element, a solder layer which is arranged on at least one surface of the semiconductor element and a lead frame which is arranged on the solder layer so that a porous nickel plating part is sandwiched between the lead frame and the solder layer. Compared with a case that the semiconductor element and the lead frame are jointed by a solder directly, an increased part of a thermal resistance of the solder junction is held down only to a part of the porous nickel plating part and a thermal resistance applied to the solder layer can be reduced.

Abstract: A semiconductor device (1) includes: a semiconductor chip (2) having a first main surface and a second main surface opposite to the first main surface; a heat dissipating plate (3) opposed to the first main surface; a first electrode (5) disposed between the first main surface and the heat dissipating plate (3) so as to be electrically connected to the semiconductor chip (2); a pressure contact member (4) opposed to the second main surface; a second electrode (6) disposed between the second main surface and the pressure contact member (4) so as to be electrically connected to the semiconductor chip (2); and a pressure generating mechanism that generates a pressure for pressing the first electrode (5) into contact with the heat dissipating plate (3) and the semiconductor chip (2) and pressing the second electrode (6) into contact with the pressure contact member (4) and the semiconductor chip (2).

Abstract: A pressed-contact type semiconductor device includes a power semiconductor element, on an upper surface of which at least a first electrode is formed and on a lower surface of which at least a second electrode is formed, lead frames which face the first electrode and the second electrode of the power semiconductor element respectively, and a clip which applies a pressure to the lead frames while the power semiconductor element is sandwiched by the lead frames, wherein a metallic porous plating part is formed on a surface which faces the first electrode or the second electrode, the surface being a surface of at least one of the lead frames.

Abstract: A biosensor device which is possible to be downsized and potable, is free of the problem of solution outflow, and enables detection accurately and stably is realized.

Abstract: A semiconductor device which can reduce a heat stress to a solder layer while suppressing an increase of thermal resistance is provided. A semiconductor device includes a semiconductor element, a solder layer which is arranged on at least one surface of the semiconductor element and a lead frame which is arranged on the solder layer so that a porous nickel plating part is sandwiched between the lead frame and the solder layer. Compared with a case that the semiconductor element and the lead frame are jointed by a solder directly, an increased part of a thermal resistance of the solder junction is held down only to a part of the porous nickel plating part and a thermal resistance applied to the solder layer can be reduced.