Patents by Inventor Keiko Kida

Keiko Kida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8669567
    Abstract: A light-emitting device is disclosed. More particularly, the light-emitting device comprises a first substrate; a light-emitting element over the first substrate; a second substrate over the light-emitting element, wherein the second substrate contains a concave portion; a sealant between the first substrate and the second substrate; and a material having a water absorbing property is formed in the concave portion, wherein the material having the water absorbing property is provided so as not to overlap the light-emitting element, and so as to be spaced from the sealant.
    Type: Grant
    Filed: June 10, 2011
    Date of Patent: March 11, 2014
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Kawakami, Kaoru Tsuchiya, Takeshi Nishi, Yoshiharu Hirakata, Keiko Kida, Ayumi Sato, Shunpei Yamazaki
  • Publication number: 20110241032
    Abstract: A light-emitting device is disclosed capable of reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. More particularly, a light-emitting device is disclosed capable of preventing impurities from dispersing from a light-emitting element into a thin film transistor as well as reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. The disclosed light-emitting device comprises a substrate; a first insulating layer provided over the substrate; a transistor provided over the first insulating layer; and a second insulating layer having a first opening portion so that the transistor is covered and the substrate is exposed; wherein a light-emitting element is provided inside the first opening portion.
    Type: Application
    Filed: June 10, 2011
    Publication date: October 6, 2011
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takahiro KAWAKAMI, Kaoru TSUCHIYA, Takeshi NISHI, Yoshiharu HIRAKATA, Keiko KIDA, Ayumi SATO, Shunpei YAMAZAKI
  • Patent number: 7977685
    Abstract: A light-emitting device is disclosed capable of reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. More particularly, a light-emitting device is disclosed capable of preventing impurities from dispersing from a light-emitting element into a thin film transistor as well as reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. The disclosed light-emitting device comprises a substrate; a first insulating layer provided over the substrate; a transistor provided over the first insulating layer; and a second insulating layer having a first opening portion so that the transistor is covered and the substrate is exposed; wherein a light-emitting element is provided inside the first opening portion.
    Type: Grant
    Filed: November 29, 2007
    Date of Patent: July 12, 2011
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Kawakami, Kaoru Tsuchiya, Takeshi Nishi, Yoshiharu Hirakata, Keiko Kida, Ayumi Sato, Shunpei Yamazaki
  • Publication number: 20080079362
    Abstract: A light-emitting device is disclosed capable of reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. More particularly, a light-emitting device is disclosed capable of preventing impurities from dispersing from a light-emitting element into a thin film transistor as well as reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. The disclosed light-emitting device comprises a substrate; a first insulating layer provided over the substrate; a transistor provided over the first insulating layer; and a second insulating layer having a first opening portion so that the transistor is covered and the substrate is exposed; wherein a light-emitting element is provided inside the first opening portion.
    Type: Application
    Filed: November 29, 2007
    Publication date: April 3, 2008
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takahiro KAWAKAMI, Kaoru TSUCHIYA, Takeshi NISHI, Yoshiharu HIRAKATA, Keiko KIDA, Ayumi SATO, Shunpei YAMAZAKI
  • Patent number: 7315047
    Abstract: A light-emitting device is disclosed capable of reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. More particularly, a light-emitting device is disclosed capable of preventing impurities from dispersing from a light-emitting element into a thin film transistor as well as reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. The disclosed light-emitting device comprises a substrate; a first insulating layer provided over the substrate; a transistor provided over the first insulating layer; and a second insulating layer having a first opening portion so that the transistor is covered and the substrate is exposed; wherein a light-emitting element is provided inside the first opening portion.
    Type: Grant
    Filed: January 25, 2005
    Date of Patent: January 1, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Kawakami, Kaoru Tsuchiya, Takeshi Nishi, Yoshiharu Hirakata, Keiko Kida, Ayumi Sato, Shunpei Yamazaki
  • Patent number: 7274044
    Abstract: It is an object of the present invention to provide an active matrix light emitting device which can efficiently prevent a diffusion of impurities from a substrate to a transistor, as well as reducing a reflection of light in a process of extracting light toward the outside of the light emitting device. One feature of the present invention is a light emitting device including a substrate, a first insulating layer provided over the substrate, a transistor provided over the first insulating layer, and a second insulating layer having a first opening portion which is provided to expose the substrate as well as covering the transistor, wherein a light emitting element is provided inside the first opening portion.
    Type: Grant
    Filed: January 25, 2005
    Date of Patent: September 25, 2007
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Kawakami, Kaoru Tsuchiya, Takeshi Nishi, Yoshiharu Hirakata, Keiko Kida, Ayumi Sato, Shunpei Yamazaki
  • Publication number: 20050179372
    Abstract: It is an object of the present invention to provide an active matrix light emitting device which can efficiently prevent a diffusion of impurities from a substrate to a transistor, as well as reducing a reflection of light in a process of extracting light toward the outside of the light emitting device. One feature of the present invention is a light emitting device including a substrate, a first insulating layer provided over the substrate, a transistor provided over the first insulating layer, and a second insulating layer having a first opening portion which is provided to expose the substrate as well as covering the transistor, wherein a light emitting element is provided inside the first opening portion.
    Type: Application
    Filed: January 25, 2005
    Publication date: August 18, 2005
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takahiro Kawakami, Kaoru Tsuchiya, Takeshi Nishi, Yoshiharu Hirakata, Keiko Kida, Ayumi Sato, Shunpei Yamazaki
  • Publication number: 20050161680
    Abstract: A light-emitting device is disclosed capable of reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. More particularly, a light-emitting device is disclosed capable of preventing impurities from dispersing from a light-emitting element into a thin film transistor as well as reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. The disclosed light-emitting device comprises a substrate; a first insulating layer provided over the substrate; a transistor provided over the first insulating layer; and a second insulating layer having a first opening portion so that the transistor is covered and the substrate is exposed; wherein a light-emitting element is provided inside the first opening portion.
    Type: Application
    Filed: January 25, 2005
    Publication date: July 28, 2005
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Takahiro Kawakami, Kaoru Tsuchiya, Takeshi Nishi, Yoshiharu Hirakata, Keiko Kida, Ayumi Sato, Shunpei Yamazaki