Abstract: A power generation facility in an embodiment includes: a boiler; a high-pressure turbine to which steam generated in the boiler is introduced; a low-pressure turbine provided downstream of the high-pressure turbine; and a condenser that condenses steam discharged from the low-pressure turbine. The power generation facility further includes: a feed pipe that leads feedwater in the condenser to the boiler; a heat storage and steam generation device that has a heat storage function that uses surplus energy generated in an own system to store heat, and a steam generation function that has part of feedwater led by the feed pipe introduced thereinto and turns the feedwater into steam by the stored heat; and a steam supply pipe that supplies steam generated in the heat storage and steam generation device to an own system.

Abstract: Amorphous semiconductor thin film is exposed to an atmosphere of hydrogen radical during or after the formation of thin film, or is subject to light irradiation having a density of not less than 10 W/cm.sup.2 at a wavelength of 300 to 700 nm during the formation of the thin film. The obtained thin film has improved, i.e. small, photo deterioration. The semiconductor device using the above thin film is preferably applied to solar cells or thin film transistors.

Abstract: A color sensor of the present invention is a semiconductor element comprising a semiconductor wherein a plurality of pn or pin junctions are laminated, and conductive layers which are laminated on both surfaces of the semiconductor, characterized in that the semiconductor element is arranged in a way that the quantity of production of photocarriers is increased in order from the light incident side for the whole wave length band to be measured, and that value of current is detected by changing voltage between both conductivity layers. According to the color sensor of the present invention, the construction can be simplified, it is easily integrated and large-scaled, manufacturing process can be simplified, and the yield of color sensors increases, so that there can be realized a color sensor with low cost.

Abstract: An amorphous semiconductor film is prepared by the usual procedure and, then, established by exposing it to sufficient light intermittently to age the same. The degradation of the electrical characteristics of the semiconductor film on prolonged exposure to light is minimized by the above technique. The preferred intermittent light is a pulsed light. The above light treatment may be applied to an individual semiconductor film, a laminated assembly including at least the pin layers, a finished semiconductor device such as a solar cell or a semiconductor device prior to attachment of an electrode.