Abstract: The object of the present invention is to provide a touch switch that enables reduction in the low-sensitivity region where the contact by fingers cannot be detected. The touch switch of the present invention comprises an insulating layer; sensor electrodes as a plurality of first electrodes provided on one surface of the insulating layer; a plurality of wire portions provided on one surface of the insulating layer, individually connected to the sensor electrodes; and auxiliary electrodes as a plurality of second electrodes provided on the other surface of the insulating layer, each auxiliary electrode being provided in a portion opposite each sensor electrode, wherein a boundary of adjacent auxiliary electrodes is provided in a region between adjacent sensor electrodes.

Abstract: The object of the present invention is to provide a touch switch that enables reduction in the low-sensitivity region where the contact by fingers cannot be detected. The touch switch of the present invention comprises an insulating layer; sensor electrodes as a plurality of first electrodes provided on one surface of the insulating layer; a plurality of wire portions provided on one surface of the insulating layer, individually connected to the sensor electrodes; and auxiliary electrodes as a plurality of second electrodes provided on the other surface of the insulating layer, each auxiliary electrode being provided in a portion opposite each sensor electrode, wherein a boundary of adjacent auxiliary electrodes is provided in a region between adjacent sensor electrodes.

Abstract: A production method, comprising a step of synthesizing silicon particle-containing silicon oxide particles by performing a gas phase reaction of monosilane gas and oxidizing gas for oxidizing the monosilane gas and a step of removing the silicon oxide with hydrofluoric acid after holding the silicon oxide particle powder in an inert atmosphere at 800-1400° C., provides high-purity silicon nanoparticles which are highly practical as material powder for high-performance light-emitting elements and electronic parts in an industrial scale.

Abstract: A production method, comprising a step of synthesizing silicon particle-containing silicon oxide particles by performing a gas phase reaction of monosilane gas and oxidizing gas for oxidizing the monosilane gas and a step of removing the silicon oxide with hydrofluoric acid after holding the silicon oxide particle powder in an inert atmosphere at 800-1400°, provides high-purity silicon nanoparticles which are highly practical as material powder for high-performance light-emitting elements and electronic parts in an industrial scale.

Abstract: A production method, comprising a step of synthesizing silicon particle-containing silicon oxide particles by performing a gas phase reaction of monosilane gas and oxidizing gas for oxidizing the monosilane gas and a step of removing the silicon oxide with hydrofluoric acid after holding the silicon oxide particle powder in an inert atmosphere at 800-1400° C., provides high-purity silicon nanoparticles which are highly practical as material powder for high-performance light-emitting elements and electronic parts in an industrial scale.

Abstract: A production method, comprising a step of synthesizing silicon particle-containing silicon oxide particles by performing a gas phase reaction of monosilane gas and oxidizing gas for oxidizing the monosilane gas and a step of removing the silicon oxide with hydrofluoric acid after holding the silicon oxide particle powder in an inert atmosphere at 800-1400?, provides high-purity silicon nanoparticles which are highly practical as material powder for high-performance light-emitting elements and electronic parts in an industrial scale.