Abstract: The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.

Abstract: The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.

Abstract: An underlying conductive film made of iridium and having a thickness of about 0.1 &mgr;m is formed in a contact hole formed in an insulating film covering a transistor formed in a substrate, except in the top portion of the contact hole. The underlying conductive film covers the sidewall portions of the contact hole and the top surface of the drain region but does not completely fill in the contact hole. A plug made of platinum is filled in the contact hole up to the top portion thereof. Over the contact hole of the insulating film, there is formed a capacitor composed of a lower electrode made of platinum, a capacitor insulating film made of SrBi2Ta2O9, and an upper electrode made of platinum in contact relation with the respective upper ends of the underlying conductive film and the plug.

Abstract: An underlying conductive film made of iridium and having a thickness of about 0.1 &mgr;m is formed in a contact hole formed in an insulating film covering a transistor formed in a substrate, except in the top portion of the contact hole. The underlying conductive film covers the sidewall portions of the contact hole and the top surface of the drain region but does not completely fill in the contact hole. A plug made of platinum is filled in the contact hole up to the top portion thereof. Over the contact hole of the insulating film, there is formed a capacitor composed of a lower electrode made of platinum, a capacitor insulating film made of SrBi2Ta2O9, and an upper electrode made of platinum in contact relation with the respective upper ends of the underlying conductive film and the plug.

Abstract: The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.

Abstract: The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.

Abstract: A method for an accelerated test of semiconductor devices comprises the steps of determining a relational expression t.sub.1 =t.sub.2.sup.m between an information holding lifetime t.sub.1 at a temperature T.sub.1 and another lifetime t.sub.2 at another temperature T.sub.2, expressing the exponent m as a function of the temperature that is proportional to the Boltzmann's factor, and calculating the information holding lifetime t.sub.2 at the temperature T.sub.2 on the basis of the information holding lifetime t.sub.1 at the temperature T.sub.1 using the relational expression.