Abstract: Disclosed is a copper film selective formation method capable of reducing the material cost by selectively depositing copper in a necessary region of an undercoat film made of an arbitrary material such as a metal or an insulating material. This copper film selective formation method includes the steps of forming a thin film of a silane coupling agent or a surfactant on an undercoat film on a substrate, making a prospective copper film region of the thin film hydrophilic, and selectively forming a copper film in the hydrophilic prospective copper film region of the undercoat film by CVD of copper.

Abstract: A method of preparing a semiconductor work surface comprises the steps of forming an Si monocrystaline substrate including a semiconductor work surface, removing by wet-etching a silicon oxide film formed on the work surface, using HF solution, and washing the work surface by pure water, serving as a washing liquid, of a dissolved oxygen concentration of 500 ppb or lower. The work surface is made of monocrystal and has an orientation a certain amount off the (001) plane. The certain amount is set such that an axis of the work surface has a component inclined with an angle of from 1.degree. to 5.degree. from the [001] direction to a <010> direction. The washing liquid of pure water has a property of etching the Si monocrystal, such that a single or a plurality of surfaces, including the (111) plane, can be preferentially exposed.

Abstract: A liquid crystal display device including, a first substrate, a second substrate spaced apart from and facing to the first substrate, and provided with a counter electrode, and a liquid crystal composition layer hermetically filled in between the first substrate and the second substrate, wherein a switching element and a transparent pixel electrode connected to the switching element are formed on the first substrate, and the switching element comprises an active layer formed of either polycrystalline silicon or amorphous silicon, an insulating layer containing silicon which is formed on the active layer and provided with an opening, and a wiring electrically connected via the opening with the active layer and formed the insulating layer. The wiring is formed of an alloy comprising 0.1 to 10 mol % of a metal which is capable of reducing the insulating layer containing silicon and 90 mol % or more of copper.

Abstract: According to the present invention, a method of manufacturing a semiconductor apparatus is provided which comprises the steps of (a) depositing a boron layer on a silicon substrate, and (b) thermally diffusing boron from said boron layer into said silicon substrate. The present invention, which is characteristically based on the solid phase diffusion process, enables even a thin layer to be deposited. Further, unlike the ion implantation process, the present invention enables an impurity to be uniformly diffused even into an inclined plane. Unlike the case where boron-containing glass is used as a diffusion source, the invention enables a sufficient amount of boron to be diffused even at a temperature lower than 1000.degree. C.