Abstract: Achieved is a load drive device capable of suppressing local concentration of temperature at the time of absorbing a counter electromotive force of an inductive load while suppressing a size of a power transistor. The load drive device includes a first transistor connected between a first control electrode and an inductive load. Further, the load drive device includes an active clamp circuit that becomes conductive when a terminal voltage of a second control electrode between the first transistor and the inductive load exceeds a threshold. Furthermore, the load drive device includes a second transistor connected to the second control electrode and connected in parallel to the first transistor.

Abstract: In a semiconductor device equipped with a current mirror circuit, a highly reliable semiconductor device capable of suppressing a change in a mirror ratio of the current mirror circuit over time is provided. A current mirror circuit that includes a first MOS transistor and a plurality of MOS transistors paired with the first MOS transistor, and a plurality of wiring layers formed on an upper layer of the MOS transistor are provided. The plurality of wiring layers are arranged such that wiring patterns have the same shape within a predetermined range from an end of a channel region of each of the first MOS transistor and the plurality of MOS transistors.

Abstract: There is provided a power saving and highly reliable semiconductor device on which a switching power supply circuit and a driver circuit are mounted together, and which can perform appropriate control by the driver circuit even when a battery terminal is disconnected while reducing power loss in the entire semiconductor device. The semiconductor device includes: a first terminal which is connected to a battery power source; a switching power supply circuit which steps down a battery voltage input from the first terminal; a second terminal which is connected to a switching power source different from the battery power source; a regulator circuit which steps down a voltage input from the second terminal; and a predriver circuit which is connected to the regulator circuit.

Abstract: Provided is a current control device capable of continuing feedback control for a solenoid in normal feedback control while preventing occurrence of an unintended valve operation due to flow of a reverse current.

Abstract: To prevent deterioration of current detection accuracy due to a difference in deterioration between a main MOS and a sense MOS. The load drive device includes a main MOS (101) for supplying a load current to a load, a sense MOS (102) to be used for detection of the load current, and an equalizer circuit (110) and a switch (120) which are provided in parallel between the source terminal of the main MOS and the source terminal of the sense MOS. The drain terminal of the main MOS and the drain terminal of the sense MOS have a common connection, and when a current is detected, the terminal voltage of the main MOS and the terminal voltage of the sense MOS are equalized by the equalizer circuit, and the switch is opened. When a current is not detected, the equalizer circuit is stopped and the switch short-circuits the source terminal of the main MOS and the source terminal of the sense MOS.

Abstract: Poor opening is detected with certainty and reliability with respect to a ground line of an integrated circuit device regardless of the connection state of a load and the operating state of a drive circuit. In an integrated circuit device 10, a drive circuit 30 switches between conduction and interruption of a load current using switch elements 40 and 45. The ground line 31 is grounded via the GND terminal 32 to the common ground provided outside the integrated circuit device 10 and is connected to the drive circuit 30. The ground line 21 is grounded to the common ground via the GND terminal 22 and is connected to the control circuit 20. The diagnostic current supply circuit 90 supplies a predetermined diagnostic current to the ground line 31. The rectifying elements 61 and 62 are connected between the ground line 21 and the ground line 31.

Abstract: The present invention maintains the accuracy of a reference current used in a functional circuit. Disclosed is a current generator circuit including a functional circuit and a diagnostic circuit. The functional circuit uses a reference current. The diagnostic circuit diagnoses the reference current in accordance with a comparison result obtained from comparison between the period of a periodic signal generated based on the reference current and the period of a reference clock inputted from the outside.

Abstract: Provided are a semiconductor device having small characteristic variations with time and high reliability and an in-vehicle control device using the same, the semiconductor device including a plurality of transistor elements constituting a current mirror circuit or a differential amplifier circuit that requires high relative accuracy.

Abstract: Achieved is a load drive device capable of suppressing local concentration of temperature at the time of absorbing a counter electromotive force of an inductive load while suppressing a size of a power transistor. The load drive device includes a first transistor connected between a first control electrode and an inductive load. Further, the load drive device includes an active clamp circuit that becomes conductive when a terminal voltage of a second control electrode between the first transistor and the inductive load exceeds a threshold. Furthermore, the load drive device includes a second transistor connected to the second control electrode and connected in parallel to the first transistor.

Abstract: An object is to provide a new electronic control unit that can improve detection accuracy of a sense current even in a region where the current value of the sense current is small. Provided is a sense current detection unit including a plurality of sense transistors that have different current flow rates and that are connected to current output transistors controlling a current flowing in a coil load. The current in the sense current detection unit is input to an analog/digital converter, and the current value of the current flowing in the sense current detection unit is converted into a digital value. The current value of the current flowing in the sense current detection unit is increased through a combination or a selection of the plurality of sense transistors of the sense current detection unit in a region where the current value of the main current of the current output transistors is small compared to a region where the current value of the main current is large.

Abstract: Provided is a current control device capable of continuing feedback control for a solenoid in normal feedback control while preventing occurrence of an unintended valve operation due to flow of a reverse current.

Abstract: In a semiconductor device equipped with a current mirror circuit, a highly reliable semiconductor device capable of suppressing a change in a mirror ratio of the current mirror circuit over time is provided. A current mirror circuit that includes a first MOS transistor and a plurality of MOS transistors paired with the first MOS transistor, and a plurality of wiring layers formed on an upper layer of the MOS transistor are provided. The plurality of wiring layers are arranged such that wiring patterns have the same shape within a predetermined range from an end of a channel region of each of the first MOS transistor and the plurality of MOS transistors.

Abstract: To prevent deterioration of current detection accuracy due to a difference in deterioration between a main MOS and a sense MOS. The load drive device includes a main MOS (101) for supplying a load current to a load, a sense MOS (102) to be used for detection of the load current, and an equalizer circuit (110) and a switch (120) which are provided in parallel between the source terminal of the main MOS and the source terminal of the sense MOS. The drain terminal of the main MOS and the drain terminal of the sense MOS have a common connection, and when a current is detected, the terminal voltage of the main MOS and the terminal voltage of the sense MOS are equalized by the equalizer circuit, and the switch is opened. When a current is not detected, the equalizer circuit is stopped and the switch short-circuits the source terminal of the main MOS and the source terminal of the sense MOS.

Abstract: Provided are a semiconductor device having small characteristic variations with time and high reliability and an in-vehicle control device using the same, the semiconductor device including a plurality of transistor elements constituting a current mirror circuit or a differential amplifier circuit that requires high relative accuracy.

Abstract: The present invention maintains the accuracy of a reference current used in a functional circuit. Disclosed is a current generator circuit including a functional circuit and a diagnostic circuit. The functional circuit uses a reference current. The diagnostic circuit diagnoses the reference current in accordance with a comparison result obtained from comparison between the period of a periodic signal generated based on the reference current and the period of a reference clock inputted from the outside.

Abstract: An object is to provide a new electronic control unit that can improve detection accuracy of a sense current even in a region where the current value of the sense current is small. Provided is a sense current detection unit including a plurality of sense transistors that have different current flow rates and that are connected to current output transistors controlling a current flowing in a coil load. The current in the sense current detection unit is input to an analog/digital converter, and the current value of the current flowing in the sense current detection unit is converted into a digital value. The current value of the current flowing in the sense current detection unit is increased through a combination or a selection of the plurality of sense transistors of the sense current detection unit in a region where the current value of the main current of the current output transistors is small compared to a region where the current value of the main current is large.