Abstract: A method of fabricating a connection structure is disclosed. The method includes providing a substrate that has a top surface and includes a set of pads for soldering, each of which has a pad surface exposed from the top surface of the substrate. The method also includes applying a surface treatment to a part of the top surface of the substrate close to the pads and the pad surface of each pad so as to make at least the part of the top surface and the pad surfaces of the pads rougher. The surface treatment includes sandblasting.

Abstract: An interconnection structure is disclosed. The interconnection structure includes a base substrate, a set of conductive pads disposed on the base substrate and an interconnection layer disposed on the base substrate. The interconnection layer has an edge located next to the set of the conductive pads and includes a set of side connection pads located and disposed at the edge of the interconnection layer. Each side connection pad is arranged with respect to a corresponding one of the conductive pads disposed on the base substrate.

Abstract: An interconnection layer carrying structure for transferring an interconnection layer onto a substrate is disclosed. The interconnection layer carrying structure includes a support substrate, a release layer on the support substrate; and an interconnection layer on the release layer. The interconnection layer includes an organic insulating material and a set of pads embedded in the organic insulating material. The set of the pads is configured to face towards the support substrate. The support substrate has a base part where the interconnection layer is formed and an extended part extending outside the base part.

Abstract: An interconnection layer carrying structure for transferring an interconnection layer onto a substrate is disclosed. The interconnection layer carrying structure includes a support substrate, a release layer on the support substrate; and an interconnection layer on the release layer. The interconnection layer includes an organic insulating material and a set of pads embedded in the organic insulating material. The set of the pads is configured to face towards the support substrate. The support substrate has a base part where the interconnection layer is formed and an extended part extending outside the base part.

Abstract: A method of fabricating a connection structure is disclosed. The method includes providing a substrate that has a top surface and includes a set of pads for soldering, each of which has a pad surface exposed from the top surface of the substrate. The method also includes applying a surface treatment to a part of the top surface of the substrate close to the pads and the pad surface of each pad so as to make at least the part of the top surface and the pad surfaces of the pads rougher. The surface treatment includes sandblasting.

Abstract: A method of fabricating a connection structure is disclosed. The method includes providing a substrate that has a top surface and includes a set of pads for soldering, each of which has a pad surface exposed from the top surface of the substrate. The method also includes applying a surface treatment to a part of the top surface of the substrate close to the pads and the pad surface of each pad so as to make at least the part of the top surface and the pad surfaces of the pads rougher.

Abstract: A method of fabricating a connection structure is disclosed. The method includes providing a substrate that has a top surface and includes a set of pads for soldering, each of which has a pad surface exposed from the top surface of the substrate. The method also includes applying a surface treatment to a part of the top surface of the substrate close to the pads and the pad surface of each pad so as to make at least the part of the top surface and the pad surfaces of the pads rougher.

Abstract: An interconnection structure is disclosed. The interconnection structure includes a base substrate, a set of conductive pads disposed on the base substrate and an interconnection layer disposed on the base substrate. The interconnection layer has an edge located next to the set of the conductive pads and includes a set of side connection pads located and disposed at the edge of the interconnection layer. Each side connection pad is arranged with respect to a corresponding one of the conductive pads disposed on the base substrate.

Abstract: A sacrificial interposer test structure including a release layer, a dummy layer on the release layer, one or more conductive pads embedded in the dummy layer, wherein each of the one or more conductive pads has an exposed surface, and a tie layer on the dummy layer and on each exposed surface of the one or more conductive pads.

Abstract: A technique for interconnecting chips by using an interconnection substrate is disclosed. The interconnection substrate includes a base substrate, a first group of electrodes on the base substrate for a first chip to be mounted, and a second group of electrodes on the base substrate for a second chip to be mounted. The interconnection substrate further includes an interconnection layer that includes a first set of pads for the first chip, a second set of pads for the second chip, traces and an organic insulating material. The interconnection layer is disposed on the base substrate and located within a defined area on the base substrate between the first group of electrodes and the second group of the electrodes.

Abstract: An interconnection layer carrying structure for transferring an interconnection layer onto a substrate is disclosed. The interconnection layer carrying structure includes a support substrate, a release layer on the support substrate; and an interconnection layer on the release layer. The interconnection layer includes an organic insulating material and a set of pads embedded in the organic insulating material. The set of the pads is configured to face towards the support substrate. The support substrate has a base part where the interconnection layer is formed and an extended part extending outside the base part.

Abstract: An organic substrate includes a core layer including organic materials; a first buildup layer on a top surface of the core layer; a second buildup layer on a bottom surface of the core layer; and at least one correction layer formed on at least one part of surfaces of the first buildup layer and the second buildup layer, wherein the correction layer has a thickness which has been calculated using properties of constituent materials including the coefficient of thermal expansion (CTE) and the Young's modulus of the core layer, and CTEs and the Young's modulus of the first and the second buildup layers for reducing warpage of the organic substrate.

Abstract: A technique for interconnecting chips by using an interconnection substrate is disclosed. The interconnection substrate includes a base substrate, a first group of electrodes on the base substrate for a first chip to be mounted, and a second group of electrodes on the base substrate for a second chip to be mounted. The interconnection substrate further includes an interconnection layer that includes a first set of pads for the first chip, a second set of pads for the second chip, traces and an organic insulating material. The interconnection layer is disposed on the base substrate and located within a defined area on the base substrate between the first group of electrodes and the second group of the electrodes.

Abstract: A technique for interconnecting chips by using an interconnection substrate is disclosed. The interconnection substrate includes a base substrate, a first group of electrodes on the base substrate for a first chip to be mounted, and a second group of electrodes on the base substrate for a second chip to be mounted. The interconnection substrate further includes an interconnection layer that includes a first set of pads for the first chip, a second set of pads for the second chip, traces and an organic insulating material. The interconnection layer is disposed on the base substrate and located within a defined area on the base substrate between the first group of electrodes and the second group of the electrodes.

Abstract: An organic substrate includes a core layer including organic materials; a first buildup layer on a top surface of the core layer; a second buildup layer on a bottom surface of the core layer; and at least one correction layer formed on at least one part of surfaces of the first buildup layer and the second buildup layer, wherein the correction layer has a thickness which has been calculated using properties of constituent materials including the coefficient of thermal expansion (CTE) and the Young's modulus of the core layer, and CTEs and the Young's modulus of the first and the second buildup layers for reducing warpage of the organic substrate.

Abstract: A technique for interconnecting chips by using an interconnection substrate is disclosed. The interconnection substrate includes a base substrate, a first group of electrodes on the base substrate for a first chip to be mounted, and a second group of electrodes on the base substrate for a second chip to be mounted. The interconnection substrate further includes an interconnection layer that includes a first set of pads for the first chip, a second set of pads for the second chip, traces and an organic insulating material. The interconnection layer is disposed on the base substrate and located within a defined area on the base substrate between the first group of electrodes and the second group of the electrodes.

Abstract: A sacrificial interposer test structure including a release layer, a dummy layer on the release layer, one or more conductive pads embedded in the dummy layer, wherein each of the one or more conductive pads has an exposed surface, and a tie layer on the dummy layer and on each exposed surface of the one or more conductive pads.

Abstract: Highly reliable chip mounting is accomplished by using a substrate having such a shape that a stress exerted on a flip-chip-connected chip can be reduced, so that the stress exerted on the chip is reduced and separation of an interlayer insulating layer having a low dielectric constant (low-k) is minimized. Specifically, in a chip mounting structure, a chip including an interlayer insulating layer having a low dielectric constant (low-k) is flip-chip connected to a substrate via bumps is shown. In the chip mounting structure, the substrate has such a shape that a mechanical stress exerted on the interlayer insulating layer at corner portions of the chip due to a thermal stress is reduced, the thermal stress occurring due to a difference in coefficient of thermal expansion between the chip and the substrate.

Abstract: A sacrificial interposer test structure including a release layer, a dummy layer on the release layer, one or more conductive pads embedded in the dummy layer, wherein each of the one or more conductive pads has an exposed surface, and a tie layer on the dummy layer and on each exposed surface of the one or more conductive pads.

Abstract: A joined structure which is configured such that a space between adjacent substrates is filled with a filling material. The joined structure includes a first substrate having a first conductor formed on a surface of the first substrate, a second substrate having a second conductor formed on a surface of the second substrate, arranged so that a surface of the first substrate faces a surface of the second substrate, a connecting conductor which electrically connects the first conductor and the second conductor, and a filling material between the first substrate and the second substrate. The filling material is formed into such a shape that a space is provided which corresponds to at least one of the first conductor, the second and the connecting conductor.