Patents by Inventor Keishi Oohashi

Keishi Oohashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8519323
    Abstract: A magnetic field sensor fabrication method of directly forming, with an aerosol deposition method, at a tip of an optical fiber, a magnetooptical layer having a refractive index that changes depending on a magnetic field, the method includes establishing a relationship of dc?d?dr among a diameter d of the magnetooptical layer, a diameter dc of a core of the optical fiber, and a diameter dr of a clad thereof.
    Type: Grant
    Filed: March 5, 2012
    Date of Patent: August 27, 2013
    Assignee: NEC Corporation
    Inventors: Masafumi Nakada, Mizuki Iwanami, Keishi Oohashi, Norio Masuda
  • Publication number: 20120164321
    Abstract: An electric field sensor is obtained by directly forming an electrooptical film of Fabry-Perot resonator structure on a polished surface at a tip of an optical fiber by an aerosol deposition method.
    Type: Application
    Filed: March 5, 2012
    Publication date: June 28, 2012
    Applicant: NEC CORPORATION
    Inventors: Masafumi NAKADA, Mizuki IWANAMI, Keishi OOHASHI, Norio MASUDA
  • Patent number: 8153955
    Abstract: An electric field sensor is obtained by directly forming an electrooptical film of Fabry-Perot resonator structure on a polished surface at a tip of an optical fiber by an aerosol deposition method.
    Type: Grant
    Filed: June 29, 2006
    Date of Patent: April 10, 2012
    Assignee: NEC Corporation
    Inventors: Masafumi Nakada, Mizuki Iwanami, Keishi Oohashi, Norio Masuda
  • Patent number: 7883911
    Abstract: A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
    Type: Grant
    Filed: March 11, 2009
    Date of Patent: February 8, 2011
    Assignee: NEC Corporation
    Inventors: Keishi Oohashi, Tsutomu Ishi, Toshio Baba, Junichi Fujikata, Kikuo Makita
  • Patent number: 7728366
    Abstract: A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
    Type: Grant
    Filed: April 5, 2005
    Date of Patent: June 1, 2010
    Assignee: NEC Corporation
    Inventors: Keishi Oohashi, Tsutomu Ishi, Toshio Baba, Junichi Fujikata, Kikuo Makita
  • Publication number: 20090224753
    Abstract: An electric field sensor is obtained by directly forming an electrooptical film of Fabry-Perot resonator structure on a polished surface at a tip of an optical fiber by an aerosol deposition method.
    Type: Application
    Filed: June 29, 2006
    Publication date: September 10, 2009
    Applicant: NEC CORPORATION
    Inventors: Masafumi Nakada, Mizuki Iwanami, Keishi Oohashi, Norio Masuda
  • Publication number: 20090176327
    Abstract: A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
    Type: Application
    Filed: March 11, 2009
    Publication date: July 9, 2009
    Inventors: Keishi Oohashi, Tsutomu Ishi, Toshio Baba, Junichi Fujikata, Kikuo Makita
  • Publication number: 20070194357
    Abstract: A Schottky photodiode includes a semiconductor layer and a conductive film provided in contact with the semiconductor layer. The conductive film has an aperture and a periodic structure provided around said aperture for producing a resonant state by an excited surface plasmon in a film surface of the conductive film by means of the incident light to the film surface. The photodiode detects near-field light that is generated by at the interface between the conductive film and semiconductor layer the excited surface plasmon. The aperture has a diameter smaller than the wavelength of the incident light.
    Type: Application
    Filed: April 5, 2005
    Publication date: August 23, 2007
    Inventors: Keishi Oohashi, Tsutomu Ishi, Toshio Baba, Junichi Fujikata, Kikuo Makita