Patents by Inventor Keishi Saito

Keishi Saito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070046191
    Abstract: The present invention provides an organic EL display device having a planarizing layer, which is prevented from being distorted. The above organic EL display device has a planarizing layer, which retains 5% or less the oligomer used to form this layer.
    Type: Application
    Filed: August 11, 2006
    Publication date: March 1, 2007
    Applicant: CANON KABUSHIKI KAISHA
    Inventor: Keishi Saito
  • Publication number: 20060108529
    Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
    Type: Application
    Filed: November 9, 2005
    Publication date: May 25, 2006
    Applicants: CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Keishi Saito, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Patent number: 7001460
    Abstract: In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, microcrystal grains of different grain diameters are provided as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is lessened to thereby improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.
    Type: Grant
    Filed: July 24, 2003
    Date of Patent: February 21, 2006
    Assignee: Canon Kabushiki Kaisha
    Inventors: Keishi Saito, Masafumi Sano
  • Publication number: 20050173704
    Abstract: In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, providing microcrystal grains of different grain diameters as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is improved to improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.
    Type: Application
    Filed: July 24, 2003
    Publication date: August 11, 2005
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Keishi Saito, Masafumi Sano
  • Publication number: 20050073479
    Abstract: A display apparatus which sequentially applies a scanning pulse to one row electrode of the row electrode pair while applying a pixel data pulse corresponding to the pixel data to the column electrodes one display line by one display line, simultaneously with the scanning pulse, to selectively produce an address discharge in the second discharge cell in the address period, applies a sustain pulse to the row electrode pairs in the sustain period, and produces a reset discharge in the same discharge current direction as the address discharge between one row electrode of the row electrode pair and the column electrode in the second discharge cell immediately before the address period of at least the first sub-field of the one-field display period, and a method of driving the display panel.
    Type: Application
    Filed: September 30, 2004
    Publication date: April 7, 2005
    Inventors: Hikaru Takahashi, Hideto Endo, Keishi Saito, Kazuo Yahagi, Yuya Shiozaki, Yuichi Sakai, Shigeru Iwaoka, Nobuhiko Saegusa
  • Patent number: 6635899
    Abstract: In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, providing microcrystal grains of different grain diameters as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is improved to improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.
    Type: Grant
    Filed: April 23, 2001
    Date of Patent: October 21, 2003
    Assignee: Canon Kabushiki Kaisha
    Inventors: Keishi Saito, Masafumi Sano
  • Publication number: 20020180658
    Abstract: An information display unit is used for a vehicle for displaying information inside and outside the vehicle. The information display unit includes a display portion having flexibility, and a drive electrode disposed on one side of the display portion. Information displayed on the information display unit is electrically changed in response to change of at least one of a current position and a current time of the vehicle.
    Type: Application
    Filed: May 28, 2002
    Publication date: December 5, 2002
    Applicant: PIONEER CORPORATION
    Inventors: Keishi Saito, Tetsu Yamagori
  • Patent number: 6483021
    Abstract: The present invention provides a stacked photovoltaic element formed by stacking, on a substrate, at least a pin junction constituent element having a microcrystalline semiconductor in an i-type semiconductor layer and a pin junction constituent element having an amorphous semiconductor in an i-type semiconductor layer, wherein a current is controlled by the pin junction constituent element having the microcrystalline semiconductor in the i-type semiconductor layer, thereby obtaining a stacked photovoltaic element with a high photoelectric conversion efficiency and a reduced variation in the photoelectric conversion efficiency for a long light irradiation time.
    Type: Grant
    Filed: February 25, 1999
    Date of Patent: November 19, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventor: Keishi Saito
  • Publication number: 20020130615
    Abstract: An organic EL display panel includes a plurality of organic EL elements 30 having a transparent electrode 11, at least one organic functional layer 12 containing a light-emitting layer of organic compound and a metallic electrode 13, which are successively stacked, respectively; a front-surface moisture-proofing film 10 which is kept in contact with the transparent electrode 11 to carry the plurality of organic EL elements 30 in plane; a rear-surface moisture-proofing film 14 which is kept in contact with the metallic electrode 13 to carry the plurality of organic EL elements 30 in plane; and sealing layers 15 which surround at least each of the organic functional layers 12 so that they are individually distinct from one another.
    Type: Application
    Filed: March 15, 2002
    Publication date: September 19, 2002
    Applicant: PIONEER CORPORATION
    Inventors: Keishi Saito, Sokichi Miyoshi, Takashi Nakano
  • Patent number: 6379994
    Abstract: Disclosed is a method for manufacturing a photovoltaic element wherein a pin-structure formed by laminating n-, i- and p-type semiconductor layers, each of which contains silicon atoms and has a non-monocrystalline crystal structure is formed at least one or more times on a substrate, the method comprising steps of forming each of the semiconductor layers and annealing the surface of at least one of the semiconductor layers or the substrate in an atmosphere of hydrogen gas, helium gas or argon gas that contains 1 to 1000 ppm of oxygen atom containing gas.
    Type: Grant
    Filed: September 24, 1996
    Date of Patent: April 30, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masafumi Sano, Keishi Saito
  • Patent number: 6365308
    Abstract: In order to maintain excellent electrical, optical and photoconductive characteristics and to significantly improve the durability under adverse environments, a light receiving member for electrophotography according to the present invention comprises in sequence: a supporting member and a light receiving layer; said light receiving layer comprising in sequence at least a photoconductive layer and a surface layer thereon, said photoconductive layer comprising a non-single-crystal material containing silicon atoms as a matrix, and said surface layer comprising an amorphous material containing silicon atoms and carbon atoms as a matrix, wherein the carbon atoms are at least diamond-bonded and graphite-bonded, and wherein from 2% to 30% by number of the carbon atoms are graphite-bonded.
    Type: Grant
    Filed: October 29, 1997
    Date of Patent: April 2, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventors: Satoshi Kojima, Keishi Saito, Hirokazu Ohtoshi, Masafumi Sano, Junichiro Hashizume, Yasuyoshi Takai, Ryo Hayashi, Masahiko Tonogaki
  • Patent number: 6362020
    Abstract: The present invention provides a process of forming a deposited film on a belt-like substrate by a roll-to-roll system, the process comprising the step of eliminating a curl deformation of the belt-like substrate resulting from application of a deformation stress, by exerting an external stress on a non-depositing surface of the belt-like substrate. It can prevent occurrence of flaws, defects of appearance, defects of electrode, and so on in succeeding steps etc. and can produce semiconductor elements and photovoltaic elements with high quality at a high yield.
    Type: Grant
    Filed: January 28, 1999
    Date of Patent: March 26, 2002
    Assignee: Canon Kabushiki Kaisha
    Inventors: Hiroshi Shimoda, Keishi Saito
  • Publication number: 20020011264
    Abstract: The present invention provides a stacked photovoltaic element formed by stacking, on a substrate, at least a pin junction constituent element having a microcrystalline semiconductor in an i-type semiconductor layer and a pin junction constituent element having an amorphous semiconductor in an i-type semiconductor layer, wherein a current is controlled by the pin junction constituent element having the microcrystalline semiconductor in the i-type semiconductor layer, thereby obtaining a stacked photovoltaic element with a high photoelectric conversion efficiency and a reduced variation in the photoelectric conversion efficiency for a long light irradiation time.
    Type: Application
    Filed: February 25, 1999
    Publication date: January 31, 2002
    Inventor: KEISHI SAITO
  • Patent number: 6331474
    Abstract: A defect compensation method for a semiconductor element to compensate for defects of the semiconductor element, in which hot water is conducted with the semiconductor element to accomplish defect compensation. On the basis of this treatment, excessive progress of oxidation of the crystal grain boundary and retention of water and OH− groups in the film are provented.
    Type: Grant
    Filed: August 1, 2000
    Date of Patent: December 18, 2001
    Assignee: Canon Kabushiki Kaisha
    Inventors: Ryo Hayashi, Keishi Saito
  • Publication number: 20010030321
    Abstract: In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, providing microcrystal grains of different grain diameters as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is improved to improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.
    Type: Application
    Filed: April 23, 2001
    Publication date: October 18, 2001
    Inventors: Keishi Saito, Masafumi Sano
  • Patent number: 6303945
    Abstract: In a semiconductor element comprising microcrystalline semiconductor, a semiconductor junction is provided within a microcrystal grain. Further, in a semiconductor element comprising microcrystalline semiconductor, microcrystal grains of different grain diameters are provided as a mixture to form a semiconductor layer. Thereby, discontinuity of a semiconductor junction is lessened to thereby improve the characteristics, durability, and heat resisting properties of a semiconductor element. Distortion in a semiconductor layer is also reduced.
    Type: Grant
    Filed: March 12, 1999
    Date of Patent: October 16, 2001
    Assignee: Canon Kabushiki Kaisha
    Inventors: Keishi Saito, Masafumi Sano
  • Patent number: 6153823
    Abstract: A photoelectric conversion element comprising a substrate, a plurality of semiconductor junctions made of non-single-crystalline semiconductors formed on the substrate, and a surface material covering the semiconductor junctions is provided. The semiconductor junctions have respective absorption spectra different from each other and respective photo-deterioration rates different from each other. A photo-current generated by the semiconductor junction of the least deterioration rate is larger than that by the semiconductor junction of the greatest deterioration rate when no surface material is present, and when present, the surface material absorbs light in a range corresponding to a part of the absorption spectrum of the semiconductor junction of the least deterioration rate, so that the photo-current generated by the semiconductor junction of the least deterioration rate becomes smaller than that by the semiconductor junction of the greatest deterioration rate.
    Type: Grant
    Filed: March 11, 1998
    Date of Patent: November 28, 2000
    Assignee: Canon Kabushiki Kaisha
    Inventors: Atsushi Shiozaki, Keishi Saito, Masahiro Kanai, Hirokazu Ohtoshi, Naoto Okada
  • Patent number: 6107116
    Abstract: A photovoltaic element is formed by providing a substrate under vacuum; introducing a sputter gas and applying RF power to generate a plasma and provide a photovoltaic element having a substrate, a zinc oxide layer containing fluorine on the substrate, wherein a fluorine-containing zinc oxide layer is employed as a target.
    Type: Grant
    Filed: August 17, 1998
    Date of Patent: August 22, 2000
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshimitsu Kariya, Keishi Saito
  • Patent number: 6054024
    Abstract: There are provided a method which, in forming a transparent conductive film by sputtering on a semiconductor junction layer provided on a conductive substrate which bears at least the transparent conductive film thereon, comprises steps of electrically insulating the conductive substrate, and maintaining the self bias voltage Vself of the conductive substrate within a range of -50 V.ltoreq.Vself<0 V, and an apparatus therefor. There can also be reduced the damage to the semiconductor layer, induced by the cations such as Ar.sup.+. Thus there can be produced the photovoltaic elements of a high open-circuit voltage and a high photoelectric conversion efficiency in stable manner.
    Type: Grant
    Filed: September 10, 1997
    Date of Patent: April 25, 2000
    Assignee: Canon Kabushiki Kaisha
    Inventors: Noboru Toyama, Keishi Saito, Ryo Hayashi, Yukiko Iwasaki
  • Patent number: 5854847
    Abstract: A speaker system for use in an automobile vehicle, comprises: pair of side speakers disposed on left and right sides in a front section within the automobile vehicle; a central speaker disposed in a middle position between the two side speakers; a pair of delay circuits connected on two signal lines leading to the side speakers disposed on the left and right sides within the vehicle; an adder connected between the left and right channels to add together the electric signals transmitted from the left and right channels so as to produce a sum signal; and a band pass filter connected on a signal line leading to the central speaker, said band pass filter being constructed and adjusted to eliminate a high frequency signal component. The sum signal fed from the adder is passed through the band pass filter before being applied to the central speaker.
    Type: Grant
    Filed: January 29, 1998
    Date of Patent: December 29, 1998
    Assignee: Pioneer Electronic Corp.
    Inventors: Minoru Yoshida, Keishi Saito, Fumio Matsushita, Katsumi Amano, Satoshi Kumada, Yoshiki Ohta