Patents by Inventor Keishi Saitoh
Keishi Saitoh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 4587190Abstract: A photoconductive member comprises a substrate and a light receiving layer having photoconductivity which comprises an amorphous material containing silicon atoms and germanium atoms, the germanium atoms being distributed non-uniformly in the layer thickness direction in the light receiving layer and nitrogen atoms being contained in the light receiving layer.Type: GrantFiled: August 31, 1984Date of Patent: May 6, 1986Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Yukihiko Ohnuki, Shigeru Ohno
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Patent number: 4585721Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing nitrogen atoms.Type: GrantFiled: August 31, 1984Date of Patent: April 29, 1986Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Yukihiko Ohnuki, Shigeru Ohno
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Patent number: 4585719Abstract: A photoconductive member comprises a support for a photoconductive member and a light receiving layer overlaying the support comprising a first layer region (G) comprising an amorphous material containing silicon atoms and germanium atoms and a second layer (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms, the first layer region (G) and the second layer region (S) being provided in this order from the support side, and the distribution of germanium atoms in the said first layer (G) being not uniform in the layer thickness direction and nitrogen atoms being contained in the light receiving layer. There may be provided on the light receiving layer a layer comprising an amorphous material containing silicon atoms and at least one of carbon atoms and oxygen atoms.Type: GrantFiled: August 31, 1984Date of Patent: April 29, 1986Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Yukihiko Ohnuki, Shigeru Ohno
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Patent number: 4585720Abstract: A photoconductive member comprises a substrate, a layer composed of an amorphous material comprising Si and Ge, said layer having a layer region (C) containing carbon atoms. The layer region (C) has a region (X) where the concentration of carbon atoms increases in the direction of layer thickness toward the upper surface of said layer.An amorphous layer of silicon containing at least one of nitrogen and oxygen may overlie said layer.Type: GrantFiled: September 12, 1984Date of Patent: April 29, 1986Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Yukihiko Ohnuki, Shigeru Ohno
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Patent number: 4579797Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing nitrogen atoms together with a substance for controlling conductivity (C) in a distributed state such that, in said light receiving layer, the maximum value C(PN).sub.max of the content of said substance (C) in the layer thickness direction exists within said second layer region (S) or at the interface between said first and second layer region and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.Type: GrantFiled: October 19, 1984Date of Patent: April 1, 1986Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Yukihiko Ohnuki, Shigeru Ohno
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Patent number: 4579798Abstract: A photoconductive member comprises a support for a photoconductive member and a light receiving layer constituted of a first layer region (G) comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region (S) comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, the first layer region (G) and the second layer region (S) being provided in the mentioned order on the support, the distribution of germanium atoms in the first layer region (G) being ununiform in the direction of layer thickness, and carbon atoms being contained in the light receiving layer.Type: GrantFiled: September 6, 1984Date of Patent: April 1, 1986Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Yukihiko Ohnuki, Shigeru Ohno
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Patent number: 4572882Abstract: A photoconductive member is provided which comprises a substrate and a photoconductive light receiving layer made up of an amorphous material containing silicon atoms and germanium atoms, the light receiving layer containing nitrogen atoms and having a first layer region (1), a third layer region (3), and a second layer region (2) of nitrogen atom distribution concentrations C(1), C(3), and C(2), respectively, in the thickness direction, in that order from the substrate side to the opposite side, wherein C(3) is higher than any of C(2) and C(1) and one of C(1) and C(2) is not zero.Type: GrantFiled: September 6, 1984Date of Patent: February 25, 1986Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Yukihiko Ohnuki, Shigeru Ohno
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Patent number: 4571370Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer constitution in which a layer region (G) comprising an amorphous material containing germanium atoms and a layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer having a layer region (O) containing oxygen atoms, the depth profile of oxygen atoms in said layer region (O) being increased smoothly and continuously toward the upper end surface of the light receiving layer.Type: GrantFiled: August 13, 1984Date of Patent: February 18, 1986Assignee: Canon Kabushiki KaishaInventor: Keishi Saitoh
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Patent number: 4569892Abstract: A photoconductive member comprises a support for photoconductive member and a light-receiving layer provided on said support having a layer constitution in which a layer region (G) comprising an amorphous material containing germanium atoms and a layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the support side, said light-receiving layer having a first layer region (1), a third layer region (3) and a second layer region (2), each containing oxygen atoms, with the distribution concentrations in the layer thickness direction of C(1), C(3) and C(2), respectively, in the order mentioned from the support side, provided that when C(3) cannot be solely the maximum, and either one of C(1) and C(2) is 0, the other two are not 0 and not equal, or when C(3) is 0, the other two are not 0.Type: GrantFiled: August 17, 1984Date of Patent: February 11, 1986Assignee: Canon Kabushiki KaishaInventor: Keishi Saitoh
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Patent number: 4569894Abstract: A photoconductive member comprises a support and a light receiving layer comprising a first layer region comprising at least germanium atoms and being crystallized at least a portion thereof, a second region comprising an amorphous material comprising at least both of silicon atoms and germanium atoms and a third layer region comprising an amorphous material comprising at least silicon atoms, and exhibiting photoconductivity said layer regions being provided successively in this order from the said support side.Type: GrantFiled: January 11, 1984Date of Patent: February 11, 1986Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Kozo Arao
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Patent number: 4569893Abstract: A photoconductive member comprises a substrate for photoconductive member and a light receiving layer provided on said substrate having a layer consititution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity comprising an amorphous material containing silicon atoms are successively provided from the substrate side, said light receiving layer containing oxygen atoms together with a substance for controlling conductivity (C) in a distributed state such that, in said light receiving layer, the maximum value C(PN).sub.max of the content of said substance (C) in the layer thickness direction exists within said second layer region (S) or at the interface with said first layer region (G) and, in said second layer region(S), said substance (C) is distributed in greater amount on the side of said substrate.Type: GrantFiled: August 27, 1984Date of Patent: February 11, 1986Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Yukihiko Ohnuki, Shigeru Ohno
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Photoconductive member comprising a hydrogenated or halogenated amorphous silicon and geranium layer
Patent number: 4567127Abstract: A photoconductive member is provided which comprises a substrate and a light receiving layer having photoconductivity which comprises an amorphous material containing silicon atoms and germanium atoms, the distribution of germanium atoms therein being nonuniform in the layer thickness direction, and carbon atoms being contained in the light receiving layer.Said photoconductive member can further comprise thereon another layer which comprises amorphous material containing silicon atoms as a matrix and at least one kind of atoms selected from the group of nitrogen atoms and oxygen atoms.Type: GrantFiled: September 5, 1984Date of Patent: January 28, 1986Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Yukihiko Ohnuki, Shigeru Ohno -
Patent number: 4555465Abstract: A photoconductive member comprising a support and a light receiving layer provided on said support, having photoconductivity containing silicon atoms as a matrix and at least hydrogen atoms as constituent atom, said light receiving layer having a layer region with depth profile such that the content of hydrogen atoms contained therein is decreased in the direction of layer thickness toward both ends of said layer.Type: GrantFiled: December 16, 1983Date of Patent: November 26, 1985Assignee: Canon Kabushiki KaishaInventors: Kyosuke Ogawa, Shigeru Shirai, Keishi Saitoh, Teruo Misumi, Junichiro Kanbe
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Patent number: 4547448Abstract: A photoconductive member comprises a support for a photoconductive member; a first amorphous layer comprising an amorphous material containing silicon atoms as a matrix and exhibiting photoconductivity, said first amorphous layer having a first layer region containing oxygen atoms as constituent atoms in a distribution state which is ununiform and continuous in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution state which is continuous in the direction of layer thickness, said first layer region existing internally beneath the surface of said first amorphous layer; and a second amorphous layer comprising an amorphous material represented by any of the following formulae:Si.sub.a C.sub.1-a (0.4<a<1) (1)(Si.sub.b C.sub.1-b).sub.c H.sub.1-c (0.5<b<1, 0.6.ltoreq.c<1) (2)(Si.sub.d C.sub.1-d).sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1) (3)(Si.sub.f C.sub.1-f).sub.g (H+X).sub.Type: GrantFiled: July 6, 1984Date of Patent: October 15, 1985Assignee: Canon Kabushiki KaishaInventors: Shigeru Shirai, Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Teruo Misumi
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Patent number: 4546008Abstract: A method for forming a deposition film comprises applying an excitation energy to a silane compound (SiOA) in a gaseous state having at least one substituent (OA) of the formula of --OC.sub.a H.sub.b X.sub.c where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, provided that b and c are not simultaneously zero and X is halogen atom to form a deposition film containing silicon atom on a substrate.A method for forming a deposition film comprises applying an excitation energy to a silane compound (SiA) in a gaseous state having 2-6 silicon atoms, having at least one substituent (A) of the formula of --C.sub.a H.sub.b X.sub.Type: GrantFiled: November 2, 1984Date of Patent: October 8, 1985Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Wataru Ando
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Patent number: 4536459Abstract: A photoconductive member, comprises a support for a photoconductive member, a first amorphous layer exhibiting photoconductivity comprising an amorphous material containing silicon atoms as a martix, said first amorphous layer having a first layer region containing oxygen atoms in a distribution which is continuous and ununiform in the direction of layer thickness and a second layer region containing atoms belonging to the group III of the periodic table as constituent atoms in a distribution which is continuous and ununiform in the direction of layer thickness, and a second amorphous layer comprising an amorphous material represented by any of the following formulae:Si.sub.a C.sub.1-a (0.4<a<1) (1)(Si.sub.b C.sub.1-b).sub.c H.sub.1-c (0.5<b<1, 0.6.ltoreq.c<1) (2)(Si.sub.d C.sub.1-d).sub.e X.sub.1-e (0.47<d<1, 0.8.ltoreq.e<1) (3)(Si.sub.f C.sub.1-f).sub.g (H+X).sub.1-g (0.47<f<1, 0.8.ltoreq.g<1) (4)(wherein X represents a halogen atom).Type: GrantFiled: March 11, 1983Date of Patent: August 20, 1985Assignee: Canon Kabushiki KaishaInventors: Teruo Misumi, Kyosuke Ogawa, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Shigeru Shirai
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Patent number: 4536460Abstract: A photoconductive member comprising a support and a silicon amorphous layer, and the silicon amorphous layer has a first layer region containing at least one of oxygen, nitrogen and carbon and a second layer region containing an element of Group III. The first layer exists internally within the amorphous layer below its surface.Type: GrantFiled: October 28, 1982Date of Patent: August 20, 1985Assignee: Canon Kabushiki KaishaInventors: Junichiro Kanbe, Shigeru Shirai, Teruo Misumi, Keishi Saitoh, Yoichi Osato
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Patent number: 4532198Abstract: A photoconductive member is provided, which comprises a support for photoconductive member and a light receiving layer with a layer constitution, comprising a first layer region containing at least germanium atoms of which at least a portion is crystallized, a second region comprising an amorphous material containing at least silicon atoms and germanium atoms, a third layer region comprising an amorphous material containing at least silicon atoms and exhibiting photoconductivity, and a fourth layer region comprising an amorphous material containing silicon atoms and carbon atoms, provided successively in the order mentioned from the said support side.Type: GrantFiled: May 7, 1984Date of Patent: July 30, 1985Assignee: Canon Kabushiki KaishaInventors: Keishi Saitoh, Kozo Arao
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Patent number: 4529679Abstract: A photoconductive member comprises a substrate and a light receiving layer having photoconductive provided on said support, comprising silicon atoms as a matrix and at least halogen atoms as constituent atoms said light receiving layer having a depth profile with respect to the layer thickness direction such that the concentration of halogen atoms contained therein is increased from the said substrate side toward the surface side of the photoconductive member.Type: GrantFiled: December 22, 1983Date of Patent: July 16, 1985Assignee: Canon Kabushiki KaishaInventors: Kyosuke Ogawa, Shigeru Shirai, Keishi Saitoh, Teruo Misumi, Junichiro Kanbe
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Patent number: 4522905Abstract: A photoconductive member comprises a support for photoconductive member, an interface layer constituted of an amorphous material containing at least silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms and an amorphous layer exhibiting photoconductivity constituted of an amorphous material containing at least one of hydrogen atoms or halogen atoms as constituent atoms in a matrix of silicon atoms, said rectifying layer having a layer thickness t which from 30 .ANG. up to, but not reaching, 0.3.mu. and the content C(A) of the aforesaid atoms contained in the rectifying layer being 30 atomic ppm or more, or said t being 30 .ANG. or more and said C(A) being from 30 atomic ppm up to, but not reaching, 100 atomic ppm.Type: GrantFiled: February 1, 1983Date of Patent: June 11, 1985Inventors: Kyosuke Ogawa, Shigeru Shirai, Junichiro Kanbe, Keishi Saitoh, Yoichi Osato, Teruo Misumi