Abstract: An optical device includes a first region and an isolating layer which are each provided in a semiconductor substrate. The first region configures a photoelectric converter and includes at least an impurity of a first conductivity type. The isolating layer is configured to inhibit passage of electrons. The isolating layer includes a second region which is below the first region and which includes an impurity of a second conductivity type, a third region which surrounds the first region in plan-view thereof and which includes an impurity of the second conductivity type, and a fourth region which surrounds the second region in plan-view thereof and which is connected to the third region. The fourth region is greater in width than a connecting part of the third region which connects the third region to the fourth region.

Abstract: An optical device includes a first region and an isolating layer which are each provided in a semiconductor substrate. The first region configures a photoelectric converter and includes at least an impurity of a first conductivity type. The isolating layer is configured to inhibit passage of electrons. The isolating layer includes a second region which is below the first region and which includes an impurity of a second conductivity type, a third region which surrounds the first region in plan-view thereof and which includes an impurity of the second conductivity type, and a fourth region which surrounds the second region in plan-view thereof and which is connected to the third region. The fourth region is greater in width than a connecting part of the third region which connects the third region to the fourth region.

Abstract: A photodiode has a carrier accumulation layer of a second conductivity type and a surface area of a first conductivity type deposited in order from an inside towards a surface of a first conductivity type well region. A transfer transistor is formed so that a transfer gate electrode of the transfer transistor partially overlaps the surface layer of the photodiode and is formed above a surface of the first conductivity type well region with a gate insulating film therebetween. The surface layer includes a first surface layer, which partially overlaps the transfer gate electrode in the direction of the x-axis, and a second surface layer adjacent to the first surface layer. A concentration of the impurity of the first conductivity type is higher in the second surface layer than in the first surface layer.

Abstract: Forming an impurity region 6 and an impurity region 5 having a lower concentration than the impurity region 6 in a lower layer region of a gate electrode close to the boundary with a signal electron-voltage conversion section of a horizontal CCD outlet makes it possible to smooth a potential distribution at the time of transfer, improve the transfer efficiency, increase the number of saturated electrons and reduce variations in the transfer efficiency and variations in saturation.

Abstract: Forming an impurity region 6 and an impurity region 5 having a lower concentration than the impurity region 6 in a lower layer region of a gate electrode close to the boundary with a signal electron-voltage conversion section of a horizontal CCD outlet makes it possible to smooth a potential distribution at the time of transfer, improve the transfer efficiency, increase the number of saturated electrons and reduce variations in the transfer efficiency and variations in saturation.

Abstract: A gate electrode region of a junction transistor in a signal charge-voltage converter is allowed to have a structure that a gentle potential gradient is formed without generation of a potential barrier. Thus, it is possible to readily realize a signal charge-voltage converter which is high in S/N ratio without generation of reset noise and is excellent in signal charge-voltage conversion efficiency.

Abstract: A vertical transfer charge-coupled device for vertically transferring signal charges, a horizontal transfer charge-coupled device for receiving and horizontally transferring the transferred signal charges, an unwanted electron eliminator, and a potential barrier between the horizontal transfer charge-coupled device and the unwanted electron eliminator are provided on a semiconductor substrate. The potential barrier includes a first n-type diffusion layer, a second n-type diffusion layer that is in contact with one end thereof, and a third n-type diffusion layer that is in contact with the other end. The second n-type diffusion layer and the third n-type diffusion layer have higher impurity concentrations than the first n-type diffusion layer.

Abstract: A vertical transfer charge-coupled device for vertically transferring signal charges, a horizontal transfer charge-coupled device for receiving and horizontally transferring the transferred signal charges, an unwanted electron eliminator, and a potential barrier between the horizontal transfer charge-coupled device and the unwanted electron eliminator are provided on a semiconductor substrate. The potential barrier includes a first n-type diffusion layer, a second n-type diffusion layer that is in contact with one end thereof, and a third n-type diffusion layer that is in contact with the other end. The second n-type diffusion layer and the third n-type diffusion layer have higher impurity concentrations than the first n-type diffusion layer.

Abstract: A solid-state image pick-up device having a structure in which the amount of transferred charges is not reduced in a vertical CCD portion even if a pixel portion is made finer, and a method for manufacturing the solid-state image pick-up device are provided. A first p-type well and a second p-type well are formed on an N (100) silicon substrate. A vertical CCD n.sup.+ layer is formed in the second p-type well 3. Then, impurity ions are implanted into a surface layer of the N (100) silicon substrate including an upper layer portion of the vertical CCD n.sup.+ layer to form a p.sup.- layer. An isolating portion for isolating photodiode portions from the vertical CCD n.sup.+ layer and a read control portion for controlling the read of charges from the photodiode n layer are simultaneously formed on a portion adjacent to the vertical CCD n.sup.+ layer.

Abstract: A solid-state image pick-up device having a structure in which the amount of transferred charges is not reduced in a vertical CCD portion even if a pixel portion is made finer, and a method for manufacturing the solid-state image pick-up device are provided. A first p-type well and a second p-type well are formed on an N (100) silicon substrate. A vertical CCD n.sup.+ layer is formed in the second p-type well 3. Then, impurity ions are implanted into a surface layer of the N (100) silicon substrate including an upper layer portion of the vertical CCD n.sup.+ layer to form a p.sup.- layer. An isolating portion for isolating photodiode portions from the vertical CCD n.sup.+ layer and a read control portion for controlling the read of charges from the photodiode n layer are simultaneously formed on a portion adjacent to the vertical CCD n.sup.+ layer.