Abstract: The coil component includes a coil, a first core having a first magnetic permeability, and a second core having a second magnetic permeability lower than the first magnetic permeability. The first core and the second core form a magnetic path. The coil forms two or more winding windows. The first core contacts with an entirety of one side line extending in a second direction of each of the winding windows, and protrudes from both ends of one side line of at least one of the winding windows. The second core contacts with three side lines other than the one side line of each of the winding windows. A surface resistance of the first core between two points that are 20 mm away from each other is not less than 5 ? after a high-temperature storage test. A drive frequency of the coil component is not less than 20 kHz.

Abstract: A semiconductor device includes: an insulated gate electrode structure provided in a semiconductor substrate; a base region; a first main electrode region; a contact plug buried in a trench penetrating the first main electrode region to reach the base region with a barrier metal film interposed; an interlayer insulating film provided with a contact hole integrally connected to the trench; a contact region provided in contact with a bottom of the trench; and a second main electrode region, wherein an opening width at a lower end of the contact hole conforms to a width at an opening of the trench, an upper part of a side wall continued from the opening of the trench has a curved surface convex to an outside, and a lower part of the side wall continuously connected to the bottom of the trench has a curved surface convex to the outside.

Abstract: Provided is an antireflective member capable of improving scratch resistance. An antireflective member having a low refractive index layer on an optically transmissive substrate, the low refractive index layer containing a binder resin and hollow particles, wherein the antireflective member satisfies the following condition 1. <condition 1> In a region of 5 ?m×5 ?m on a surface of the antireflective member on a side having the low refractive index layer with respect to the optically transmissive substrate, spatial frequency analysis of elevation is performed to calculate power spectrum intensity of elevation for each wavelength; when a sum of power spectrum intensity of elevation for each wavelength is calculated and the sum is normalized to 1, the power spectrum intensity P1 of elevation at a wavelength of 1.25 ?m is 0.015 or more.

Abstract: To provide an antireflection member which not only has a low reflectance, but also is enhanced in scratch resistance, and an image display device comprising the antireflection member. An antireflection member 100 comprising a low refractive index layer 130 on a transparent substrate 110, in which the low refractive index layer 130 includes a binder resin and silica particles 132 and 134, a ratio of Si element attributed to the silica particles, obtained by analysis of a surface region of the low refractive index layer 130 by X-ray photoelectron spectroscopy, is 10.0 atomic percent or more and 18.0 atomic percent or less and a ratio of C element under the assumption that the ratio of Si element is defined to be 100 atomic percent is 180 atomic percent or more and 500 atomic percent or less.