Abstract: An indoor unit includes a housing that houses an electrical-component storage box that includes a body portion, a lid portion, and an engagement mechanism portion that engages the body portion and the lid portion with each other in a detachable manner. The lid portion covers an open region on a side of the body portion. The engagement mechanism portion includes an engagement claw portion provided at one of the body and lid portions and an engagement hole portion into which the claw portion is inserted, and which is formed at the other of the body and lid portions.

Abstract: A semiconductor laser machine includes a semiconductor laser element including a first end face that emits a laser beam and a second end face that is opposite the first end face; a heat sink; and a sub-mount securing the semiconductor laser element to the heat sink. The sub-mount includes a substrate that serves as a thermal stress reliever, a solder layer joined to the semiconductor laser element, and a junction layer formed between the substrate and the solder layer. Compared with the semiconductor laser element, the substrate is extended in a rearward direction that is from the first end face toward the second end face. As for the solder layer and the junction layer, a portion of at least the solder layer is removed behind the second end face.

Abstract: A wavelength conversion crystal including: a single nonlinear optical crystal which satisfies both of a first phase-matching condition and a second phase-matching condition, the first phase-matching condition being required for first wavelength conversion to convert a fundamental wave having a wavelength of 1064 nm into a second harmonic having a wavelength of 532 nm, and the second phase-matching condition being required for second wavelength conversion to convert the light having a wavelength of 532 nm into a fourth harmonic having a wavelength of 266 nm; and a first reflective face and a second reflective face for reflecting the light having a wavelength of 532 nm generated by the first wavelength conversion to supply it to the second wavelength conversion. This approach can efficiently generate a third or higher-order harmonic with a reliable and simple configuration.

Abstract: A wavelength conversion crystal including: a single nonlinear optical crystal which satisfies both of a first phase-matching condition and a second phase-matching condition, the first phase-matching condition being required for first wavelength conversion to convert a fundamental wave having a wavelength of 1064 nm into a second harmonic having a wavelength of 532 nm, and the second phase-matching condition being required for second wavelength conversion to convert the light having a wavelength of 532 nm into a fourth harmonic having a wavelength of 266 nm; and a first reflective face and a second reflective face for reflecting the light having a wavelength of 532 nm generated by the first wavelength conversion to supply it to the second wavelength conversion. This approach can efficiently generate a third or higher-order harmonic with a reliable and simple configuration.

Abstract: The machining device is equipped with a fiber laser oscillator for oscillating laser light of a top hat shape, and a light collecting lens and a machining head for collecting the laser light of the top hat shape and emitting the laser light onto a machining target such that the beam diameter of the laser light of the top hat shape at a position where light intensity becomes the one corresponding to a machining threshold of the machining target is about three times the size of the beam diameter of laser light in a Gaussian mode at the same position, when the laser light in the Gaussian mode has a beam quality substantially the same as that of the laser light of the top hat shape.

Abstract: A laser machining device includes a laser oscillator, a laser machining head, an optical fiber transmitting the laser beam oscillated by the laser oscillator to the laser machining head, and an assist gas supply supplying an assist gas of oxygen to the laser machining head. The optical fiber includes a remover removing a clad transmitting beam or reducer for reducing the beam. The laser beam leaked from the core of the optical fiber into the clad is absorbed by a beam absorber at the remover. The structure ensures a high quality surface with no irregularity on the metal surface cut by the laser beam projected from the machining head.

Abstract: A laser oscillator includes a light condensing block having a through-hole for housing a laser medium, and an aperture for introducing excitation light from an excitation light source module into the through-hole; an end plate fixed to an end of the light condensing block, in which a cooling water channel for leading cooling water to the light condensing block and a cooling water channel for leading cooling water to the excitation light source module are formed; and a flow tube fixed and sealed by the end plate, for forming a cooling water passage for the laser medium; and an excitation light source module in which a cooling water channel, communicating with the water channel for the excitation light source module in the end plate, is formed for cooling its excitation light source.

Abstract: A laser oscillator includes a light condensing block having a through-hole for housing a laser medium, and an aperture for introducing excitation light from an excitation light source module into the through-hole; an end plate fixed to an end of the light condensing block, in which a cooling water channel for leading cooling water to the light condensing block and a cooling water channel for leading cooling water to the excitation light source module are formed; and a flow tube fixed and sealed by the end plate, for forming a cooling water passage for the laser medium; and an excitation light source module in which a cooling water channel, communicating with the water channel for the excitation light source module in the end plate, is formed for cooling its excitation light source.

Abstract: A solid state laser excited by a semiconductor laser can generate a stable and highly efficient high power laser beam. The laser apparatus includes a solid state laser element containing an active medium, a semiconductor laser for optically exciting the solid state laser element, a power supply for supplying pulses of current having magnitudes that change with time during each pulse to the semiconductor laser, and an optical resonator for emission of a laser beam from the solid state laser element. When the semiconductor laser is driven with the pulses that change in magnitude during each pulse, it produces pulsed excitation light that excites the solid state laser element. A stable laser beam is produced because changes in thermally sensitive light-generating parameters of the semiconductor laser are compensated.

Abstract: An optical system that controls laser beam spot profile for forming a high performance thin film by a laser heat treatment process is provided. In the optical system that irradiates a rectangular laser beam on a film formed on a substrate, intensity distribution forming, apparatus makes the intensity distribution uniform in the longitudinal direction while maintaining the properties of the laser beam 2 such as directivity in the direction of shorter side, making it possible to concentrate the light to a limit permitted by the nature of the laser beam and achieve the maximum intensity gradient on the film disposed on the substrate. Thus a steep temperature distribution can be generated on the film disposed on the substrate and, as a result, high performance thin film can be formed.

Abstract: A semiconductor laser excitation solid state laser apparatus is provided which can generate a stable and highly efficient laser beam of high power. The laser apparatus includes a solid state laser element 2 containing an active medium, a semiconductor laser 1 for optically exciting the semiconductor laser 1, a power supply 8 for supplying electric power to the semiconductor laser 1, and an optical resonator 9, 10 for taking out a laser beam from the optically excited solid state laser element 2. When the semiconductor laser 1 is pulse-operated to pulse-excite the solid state laser element 2, current supplied to the semiconductor laser 1 is changed within one pulse.